BRPI0906054A2 - "embalagem alveolar, tampa laminar e método para produzir uma embalagem alveolar" - Google Patents

"embalagem alveolar, tampa laminar e método para produzir uma embalagem alveolar"

Info

Publication number
BRPI0906054A2
BRPI0906054A2 BRPI0906054-5A BRPI0906054A BRPI0906054A2 BR PI0906054 A2 BRPI0906054 A2 BR PI0906054A2 BR PI0906054 A BRPI0906054 A BR PI0906054A BR PI0906054 A2 BRPI0906054 A2 BR PI0906054A2
Authority
BR
Brazil
Prior art keywords
honeycomb package
producing
honeycomb
package
laminar
Prior art date
Application number
BRPI0906054-5A
Other languages
English (en)
Inventor
Ludovic Lepatois
Hojjat Nasseri
Original Assignee
Winpak Heat Seal Packaging Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winpak Heat Seal Packaging Inc filed Critical Winpak Heat Seal Packaging Inc
Publication of BRPI0906054A2 publication Critical patent/BRPI0906054A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
BRPI0906054-5A 2008-04-04 2009-02-28 "embalagem alveolar, tampa laminar e método para produzir uma embalagem alveolar" BRPI0906054A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4251108P 2008-04-04 2008-04-04
US12/266,828 US8933492B2 (en) 2008-04-04 2008-11-07 Low VT antifuse device
PCT/CA2009/000429 WO2009121182A1 (en) 2008-04-04 2009-04-03 Low threshold voltage anti-fuse device

Publications (1)

Publication Number Publication Date
BRPI0906054A2 true BRPI0906054A2 (pt) 2015-06-30

Family

ID=41132447

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0906054-5A BRPI0906054A2 (pt) 2008-04-04 2009-02-28 "embalagem alveolar, tampa laminar e método para produzir uma embalagem alveolar"

Country Status (9)

Country Link
US (1) US8933492B2 (pt)
JP (2) JP5657522B2 (pt)
KR (1) KR101637046B1 (pt)
CN (1) CN102057441B (pt)
BR (1) BRPI0906054A2 (pt)
CA (1) CA2646367C (pt)
IL (1) IL208416A (pt)
TW (1) TWI503825B (pt)
WO (1) WO2009121182A1 (pt)

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CN102612717B (zh) * 2009-10-30 2016-05-04 赛鼎矽公司 双阱沟道分裂otp存储单元
US8937357B2 (en) * 2010-03-01 2015-01-20 Broadcom Corporation One-time programmable semiconductor device
CN103050495B (zh) * 2011-10-14 2016-06-15 无锡华润上华科技有限公司 Otp存储单元及其制作方法
US8735986B2 (en) 2011-12-06 2014-05-27 International Business Machines Corporation Forming structures on resistive substrates
US9502424B2 (en) 2012-06-29 2016-11-22 Qualcomm Incorporated Integrated circuit device featuring an antifuse and method of making same
US9842802B2 (en) 2012-06-29 2017-12-12 Qualcomm Incorporated Integrated circuit device featuring an antifuse and method of making same
KR101950002B1 (ko) * 2012-07-30 2019-02-20 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
KR20140058220A (ko) * 2012-11-06 2014-05-14 에스케이하이닉스 주식회사 반도체 소자의 안티퓨즈 및 그 제조 방법
US9917168B2 (en) 2013-06-27 2018-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Metal oxide semiconductor field effect transistor having variable thickness gate dielectric
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US20150129975A1 (en) * 2013-11-13 2015-05-14 Globalfoundries Singapore Pte. Ltd. Multi-time programmable device
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US9202815B1 (en) * 2014-06-20 2015-12-01 Infineon Technologies Ag Method for processing a carrier, a carrier, and a split gate field effect transistor structure
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KR102358054B1 (ko) 2014-09-29 2022-02-04 삼성전자주식회사 일회적 프로그램 가능 메모리 셀들을 구비하는 메모리 장치
US9496048B2 (en) 2015-03-12 2016-11-15 Qualcomm Incorporated Differential one-time-programmable (OTP) memory array
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KR20160125114A (ko) 2015-04-21 2016-10-31 에스케이하이닉스 주식회사 이-퓨즈를 구비하는 반도체장치 및 그 제조 방법
TWI606448B (zh) 2015-07-29 2017-11-21 國立交通大學 介電質熔絲型記憶電路及其操作方法
US9799662B2 (en) * 2015-08-18 2017-10-24 Ememory Technology Inc. Antifuse-type one time programming memory cell and array structure with same
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US10032783B2 (en) * 2015-10-30 2018-07-24 Globalfoundries Singapore Pte. Ltd. Integrated circuits having an anti-fuse device and methods of forming the same
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US10163916B2 (en) * 2015-12-16 2018-12-25 NEO Semiconductor, Inc. Compact anti-fuse memory cell using CMOS process
US9773792B1 (en) * 2016-03-25 2017-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. One-time programming cell
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KR102495452B1 (ko) 2016-06-29 2023-02-02 삼성전자주식회사 반도체 장치
US10032784B2 (en) * 2016-07-27 2018-07-24 Synopsys, Inc. One-time programmable bitcell with native anti-fuse
DE102016115939B4 (de) * 2016-08-26 2021-05-27 Infineon Technologies Ag Einmal programmierbare Speicherzelle und Speicheranordnung
US10395745B2 (en) 2016-10-21 2019-08-27 Synposys, Inc. One-time programmable bitcell with native anti-fuse
TWI704675B (zh) * 2016-10-31 2020-09-11 新加坡商馬維爾亞洲私人有限公司 製造具有優化的柵極氧化物厚度的記憶體器件
KR102684720B1 (ko) 2016-12-09 2024-07-12 삼성전자주식회사 안티-퓨즈 소자 및 그 안티-퓨즈 소자를 포함한 메모리 소자
US10446562B1 (en) 2017-01-10 2019-10-15 Synopsys, Inc. One-time programmable bitcell with partially native select device
US9935014B1 (en) 2017-01-12 2018-04-03 International Business Machines Corporation Nanosheet transistors having different gate dielectric thicknesses on the same chip
US10090309B1 (en) * 2017-04-27 2018-10-02 Ememory Technology Inc. Nonvolatile memory cell capable of improving program performance
CN109585450B (zh) * 2017-09-28 2020-11-03 中芯国际集成电路制造(上海)有限公司 存储器及其形成方法
US10615166B2 (en) 2017-12-19 2020-04-07 International Business Machines Corporation Programmable device compatible with vertical transistor flow
CN109103189B (zh) * 2018-07-11 2021-08-24 上海华虹宏力半导体制造有限公司 由n型电容耦合晶体管构成的一次可编程器件
KR102606814B1 (ko) * 2018-12-28 2023-11-29 에스케이하이닉스 주식회사 안티 퓨즈를 구비한 반도체장치 및 그 제조 방법
US11296096B2 (en) * 2019-11-08 2022-04-05 Zhuhai Chuangfeixin Technology Co., Ltd. Antifuse OTP structure with hybrid junctions
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US11018143B1 (en) * 2020-03-12 2021-05-25 Zhuhai Chuangfeixin Technology Co., Ltd. Antifuse OTP structures with hybrid low-voltage devices
CN113496987B (zh) * 2020-04-08 2024-03-29 长鑫存储技术有限公司 反熔丝器件及反熔丝单元
US11244950B1 (en) * 2020-08-10 2022-02-08 Nanya Technology Corporation Method for preparing a memory device
TWI744130B (zh) * 2020-12-09 2021-10-21 億而得微電子股份有限公司 低成本低電壓反熔絲陣列
KR102898048B1 (ko) 2021-01-27 2025-12-09 삼성전자주식회사 반도체 장치 및 이를 포함하는 이미지 센서
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CN115831918B (zh) * 2021-09-17 2025-08-29 长鑫存储技术有限公司 反熔丝阵列结构及存储器
CN116093067B (zh) * 2021-11-03 2025-09-05 长鑫存储技术有限公司 熔丝结构、形成方法及可编程存储器
CN115101478B (zh) * 2022-06-29 2025-10-31 上海华虹宏力半导体制造有限公司 反熔丝单元、反熔丝存储器件及其制造方法
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Also Published As

Publication number Publication date
CN102057441A (zh) 2011-05-11
JP2015043464A (ja) 2015-03-05
CN102057441B (zh) 2016-01-20
WO2009121182A1 (en) 2009-10-08
JP5657522B2 (ja) 2015-01-21
IL208416A (en) 2014-01-30
CA2646367A1 (en) 2009-03-11
JP2011517067A (ja) 2011-05-26
IL208416A0 (en) 2010-12-30
US20090250726A1 (en) 2009-10-08
KR20110014581A (ko) 2011-02-11
JP5947361B2 (ja) 2016-07-06
TWI503825B (zh) 2015-10-11
CA2646367C (en) 2010-11-09
US8933492B2 (en) 2015-01-13
KR101637046B1 (ko) 2016-07-06
TW200943304A (en) 2009-10-16

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Legal Events

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B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 3A, 4A, 5A E 6A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2343 DE 01-12-2015 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.