BRPI0914051A2 - "estrutura de cobertura de metal descontínua / não uniforme para integração de interconexão e respectivo método de fabricação" - Google Patents
"estrutura de cobertura de metal descontínua / não uniforme para integração de interconexão e respectivo método de fabricação"Info
- Publication number
- BRPI0914051A2 BRPI0914051A2 BRPI0914051A BRPI0914051A BRPI0914051A2 BR PI0914051 A2 BRPI0914051 A2 BR PI0914051A2 BR PI0914051 A BRPI0914051 A BR PI0914051A BR PI0914051 A BRPI0914051 A BR PI0914051A BR PI0914051 A2 BRPI0914051 A2 BR PI0914051A2
- Authority
- BR
- Brazil
- Prior art keywords
- discontinuous
- manufacturing
- roof structure
- metal roof
- uniform metal
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/425—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
- H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/041—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being discontinuous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/435—Cross-sectional shapes or dispositions of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
- H10W20/48—Insulating materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/247,632 US8823176B2 (en) | 2008-10-08 | 2008-10-08 | Discontinuous/non-uniform metal cap structure and process for interconnect integration |
| PCT/US2009/051226 WO2010042265A1 (en) | 2008-10-08 | 2009-07-21 | Discontinuous/non-uniform metal cap structure and process for interconnect integration |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0914051A2 true BRPI0914051A2 (pt) | 2015-11-03 |
Family
ID=42075150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0914051A BRPI0914051A2 (pt) | 2008-10-08 | 2009-07-21 | "estrutura de cobertura de metal descontínua / não uniforme para integração de interconexão e respectivo método de fabricação" |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8823176B2 (pt) |
| EP (1) | EP2342743A4 (pt) |
| KR (1) | KR20110083636A (pt) |
| CN (1) | CN102171810A (pt) |
| BR (1) | BRPI0914051A2 (pt) |
| SG (1) | SG188903A1 (pt) |
| TW (1) | TW201027684A (pt) |
| WO (1) | WO2010042265A1 (pt) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8211776B2 (en) | 2010-01-05 | 2012-07-03 | International Business Machines Corporation | Integrated circuit line with electromigration barriers |
| US8796853B2 (en) | 2012-02-24 | 2014-08-05 | International Business Machines Corporation | Metallic capped interconnect structure with high electromigration resistance and low resistivity |
| US9076847B2 (en) | 2013-01-18 | 2015-07-07 | International Business Machines Corporation | Selective local metal cap layer formation for improved electromigration behavior |
| US9123726B2 (en) | 2013-01-18 | 2015-09-01 | International Business Machines Corporation | Selective local metal cap layer formation for improved electromigration behavior |
| US8962479B2 (en) * | 2013-05-10 | 2015-02-24 | International Business Machines Corporation | Interconnect structures containing nitrided metallic residues |
| US8906799B1 (en) | 2013-07-29 | 2014-12-09 | International Business Machines Corporation | Random local metal cap layer formation for improved integrated circuit reliability |
| WO2015030803A1 (en) | 2013-08-30 | 2015-03-05 | Hewlett-Packard Development Company, Lp | Substrate etch |
| US10699945B2 (en) * | 2018-10-04 | 2020-06-30 | International Business Machines Corporation | Back end of line integration for interconnects |
| US11239165B2 (en) | 2020-03-10 | 2022-02-01 | International Business Machines Corporation | Method of forming an interconnect structure with enhanced corner connection |
| US12157943B2 (en) | 2020-09-03 | 2024-12-03 | Applied Materials, Inc. | Methods of selective deposition |
| US12334442B2 (en) | 2022-08-31 | 2025-06-17 | International Business Machines Corporation | Dielectric caps for power and signal line routing |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5300813A (en) * | 1992-02-26 | 1994-04-05 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
| US5695810A (en) * | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
| US6147009A (en) * | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
| US6342733B1 (en) * | 1999-07-27 | 2002-01-29 | International Business Machines Corporation | Reduced electromigration and stressed induced migration of Cu wires by surface coating |
| EP1418619A4 (en) * | 2001-08-13 | 2010-09-08 | Ebara Corp | SEMICONDUCTOR COMPONENTS AND MANUFACTURING METHOD THEREFOR AND PLATING SOLUTION |
| US7404985B2 (en) * | 2002-06-04 | 2008-07-29 | Applied Materials, Inc. | Noble metal layer formation for copper film deposition |
| US6821909B2 (en) * | 2002-10-30 | 2004-11-23 | Applied Materials, Inc. | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
| US7279423B2 (en) * | 2002-10-31 | 2007-10-09 | Intel Corporation | Forming a copper diffusion barrier |
| US6706625B1 (en) * | 2002-12-06 | 2004-03-16 | Chartered Semiconductor Manufacturing Ltd. | Copper recess formation using chemical process for fabricating barrier cap for lines and vias |
| US6975032B2 (en) * | 2002-12-16 | 2005-12-13 | International Business Machines Corporation | Copper recess process with application to selective capping and electroless plating |
| KR100519169B1 (ko) * | 2003-05-09 | 2005-10-06 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속배선 형성방법 |
| US6955984B2 (en) * | 2003-05-16 | 2005-10-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface treatment of metal interconnect lines |
| US20040262772A1 (en) * | 2003-06-30 | 2004-12-30 | Shriram Ramanathan | Methods for bonding wafers using a metal interlayer |
| US7008871B2 (en) * | 2003-07-03 | 2006-03-07 | International Business Machines Corporation | Selective capping of copper wiring |
| US7074719B2 (en) * | 2003-11-28 | 2006-07-11 | International Business Machines Corporation | ALD deposition of ruthenium |
| US7170050B2 (en) * | 2004-09-17 | 2007-01-30 | Pacific Biosciences Of California, Inc. | Apparatus and methods for optical analysis of molecules |
| US20060068588A1 (en) | 2004-09-30 | 2006-03-30 | Tokyo Electron Limited | Low-pressure deposition of ruthenium and rhenium metal layers from metal carbonyl precursors |
| US7476618B2 (en) * | 2004-10-26 | 2009-01-13 | Asm Japan K.K. | Selective formation of metal layers in an integrated circuit |
| JP2006179599A (ja) * | 2004-12-21 | 2006-07-06 | Toshiba Corp | 半導体装置およびその製造方法 |
| US20060205204A1 (en) * | 2005-03-14 | 2006-09-14 | Michael Beck | Method of making a semiconductor interconnect with a metal cap |
| WO2007003223A1 (en) * | 2005-07-04 | 2007-01-11 | Freescale Semiconductor, Inc. | Method and apparatus for forming a noble metal layer, notably on inlaid metal features |
| JP2007035734A (ja) * | 2005-07-25 | 2007-02-08 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| US7446034B2 (en) * | 2005-10-06 | 2008-11-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process for making a metal seed layer |
| US7435674B2 (en) * | 2006-03-27 | 2008-10-14 | International Business Machines Corporation | Dielectric interconnect structures and methods for forming the same |
| US20080054466A1 (en) * | 2006-08-31 | 2008-03-06 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing semiconductor device |
| JP2008172051A (ja) * | 2007-01-12 | 2008-07-24 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| US20080197499A1 (en) * | 2007-02-15 | 2008-08-21 | International Business Machines Corporation | Structure for metal cap applications |
| US7776740B2 (en) * | 2008-01-22 | 2010-08-17 | Tokyo Electron Limited | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
| US7737528B2 (en) * | 2008-06-03 | 2010-06-15 | International Business Machines Corporation | Structure and method of forming electrically blown metal fuses for integrated circuits |
-
2008
- 2008-10-08 US US12/247,632 patent/US8823176B2/en active Active
-
2009
- 2009-07-21 CN CN2009801388986A patent/CN102171810A/zh active Pending
- 2009-07-21 KR KR1020117009814A patent/KR20110083636A/ko not_active Ceased
- 2009-07-21 WO PCT/US2009/051226 patent/WO2010042265A1/en not_active Ceased
- 2009-07-21 SG SG2013019146A patent/SG188903A1/en unknown
- 2009-07-21 BR BRPI0914051A patent/BRPI0914051A2/pt active IP Right Grant
- 2009-07-21 EP EP09819613A patent/EP2342743A4/en not_active Withdrawn
- 2009-09-07 TW TW098130022A patent/TW201027684A/zh unknown
-
2012
- 2012-08-31 US US13/600,773 patent/US8889546B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US8889546B2 (en) | 2014-11-18 |
| US20120329271A1 (en) | 2012-12-27 |
| SG188903A1 (en) | 2013-04-30 |
| EP2342743A4 (en) | 2012-05-16 |
| US20100084767A1 (en) | 2010-04-08 |
| EP2342743A1 (en) | 2011-07-13 |
| CN102171810A (zh) | 2011-08-31 |
| KR20110083636A (ko) | 2011-07-20 |
| TW201027684A (en) | 2010-07-16 |
| US8823176B2 (en) | 2014-09-02 |
| WO2010042265A1 (en) | 2010-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06T | Formal requirements before examination [chapter 6.20 patent gazette] | ||
| B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 23/07/2019, OBSERVADAS AS CONDICOES LEGAIS. (CO) 10 (DEZ) ANOS CONTADOS A PARTIR DE 23/07/2019, OBSERVADAS AS CONDICOES LEGAIS |