BRPI0918640A2 - placa mãe, método de produção de placa mãe, e substrato de dispositivo. - Google Patents

placa mãe, método de produção de placa mãe, e substrato de dispositivo.

Info

Publication number
BRPI0918640A2
BRPI0918640A2 BRPI0918640A BRPI0918640A BRPI0918640A2 BR PI0918640 A2 BRPI0918640 A2 BR PI0918640A2 BR PI0918640 A BRPI0918640 A BR PI0918640A BR PI0918640 A BRPI0918640 A BR PI0918640A BR PI0918640 A2 BRPI0918640 A2 BR PI0918640A2
Authority
BR
Brazil
Prior art keywords
motherboard
production method
device substrate
motherboard production
substrate
Prior art date
Application number
BRPI0918640A
Other languages
English (en)
Inventor
Yohsuke Fujikawa
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of BRPI0918640A2 publication Critical patent/BRPI0918640A2/pt

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/425—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different crystal properties in different TFTs or within an individual TFT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13456—Cell terminals located on one side of the display only
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
BRPI0918640A 2008-09-18 2009-06-09 placa mãe, método de produção de placa mãe, e substrato de dispositivo. BRPI0918640A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008239167 2008-09-18
PCT/JP2009/060549 WO2010032519A1 (ja) 2008-09-18 2009-06-09 母基板及びその製造方法、並びにデバイス基板

Publications (1)

Publication Number Publication Date
BRPI0918640A2 true BRPI0918640A2 (pt) 2015-12-01

Family

ID=42039364

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0918640A BRPI0918640A2 (pt) 2008-09-18 2009-06-09 placa mãe, método de produção de placa mãe, e substrato de dispositivo.

Country Status (7)

Country Link
US (1) US8471257B2 (pt)
EP (1) EP2328169A1 (pt)
JP (1) JP5451625B2 (pt)
CN (1) CN102089862A (pt)
BR (1) BRPI0918640A2 (pt)
RU (1) RU2476954C2 (pt)
WO (1) WO2010032519A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100841372B1 (ko) * 2006-12-19 2008-06-26 삼성에스디아이 주식회사 박막트랜지스터 및 이의 제조방법
KR101900915B1 (ko) * 2011-10-14 2018-09-27 삼성디스플레이 주식회사 표시 장치
JP6744155B2 (ja) * 2016-06-30 2020-08-19 日本電産サンキョー株式会社 搬送システム
KR102733940B1 (ko) * 2016-12-02 2024-11-25 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
JP6885134B2 (ja) * 2017-03-24 2021-06-09 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、電子機器
JP7831199B2 (ja) * 2022-08-31 2026-03-17 株式会社デンソー 半導体装置、および半導体装置の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6311989A (ja) 1987-04-03 1988-01-19 セイコーエプソン株式会社 電気光学的表示装置
JPH0221612A (ja) * 1988-07-11 1990-01-24 Hitachi Ltd 写真処理方法
RU2008713C1 (ru) * 1992-03-04 1994-02-28 Малое научно-производственное объединение "ЭЛО" Цветная жидкокристаллическая дисплейная панель с активной матрицей
SE9301424L (sv) 1993-04-28 1994-09-19 Medevelop Ab Protessystem för rehabilitering av tandlöshet
JPH11186163A (ja) 1997-12-18 1999-07-09 Matsushita Electric Ind Co Ltd 薄膜形成方法および薄膜形成装置
JP2000012460A (ja) 1998-06-24 2000-01-14 Matsushita Electric Ind Co Ltd 薄膜の形成方法および薄膜形成装置
US6336089B1 (en) * 1998-09-22 2002-01-01 Michael Everding Interactive digital phonetic captioning program
JP2000231122A (ja) * 1999-02-12 2000-08-22 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2001044133A (ja) * 1999-08-02 2001-02-16 Sharp Corp レーザ照射方法及び半導体装置の製造方法
JP2001053282A (ja) * 1999-08-11 2001-02-23 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ基板及びその検査方法
JP3937692B2 (ja) * 2000-06-15 2007-06-27 セイコーエプソン株式会社 アレイ基板の検査方法、アレイ基板の製造方法、アレイ基板及び電気光学装置
JP3783532B2 (ja) * 2000-07-24 2006-06-07 セイコーエプソン株式会社 薄膜装置、トランジスタアレイ基板、電気光学装置および薄膜装置の製造方法
JP2003271067A (ja) 2002-03-18 2003-09-25 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、および電子機器
JP2005276996A (ja) 2004-03-24 2005-10-06 Hitachi Ltd 平面表示装置の製造方法
JP4674092B2 (ja) * 2005-01-21 2011-04-20 株式会社 日立ディスプレイズ 表示装置の製造方法
JP2008028303A (ja) * 2006-07-25 2008-02-07 Hitachi Displays Ltd 平面表示装置の製造方法
JP5085902B2 (ja) * 2006-08-24 2012-11-28 株式会社ジャパンディスプレイイースト 表示装置の製造方法
JP4925884B2 (ja) 2007-03-26 2012-05-09 花王株式会社 吸収性物品の携帯用包装構造

Also Published As

Publication number Publication date
JP5451625B2 (ja) 2014-03-26
US8471257B2 (en) 2013-06-25
WO2010032519A1 (ja) 2010-03-25
CN102089862A (zh) 2011-06-08
JPWO2010032519A1 (ja) 2012-02-09
RU2476954C2 (ru) 2013-02-27
RU2011115083A (ru) 2012-10-27
EP2328169A1 (en) 2011-06-01
US20110140110A1 (en) 2011-06-16

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 5A,6A E 7A ANUIDADES

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2373 DE 28-06-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.