BRPI0918852A2 - processo útil para formar um revestimento anti-aderente, poroso e constituído de grãos de carboneto de silício, e , material - Google Patents

processo útil para formar um revestimento anti-aderente, poroso e constituído de grãos de carboneto de silício, e , material

Info

Publication number
BRPI0918852A2
BRPI0918852A2 BRPI0918852A BRPI0918852A BRPI0918852A2 BR PI0918852 A2 BRPI0918852 A2 BR PI0918852A2 BR PI0918852 A BRPI0918852 A BR PI0918852A BR PI0918852 A BRPI0918852 A BR PI0918852A BR PI0918852 A2 BRPI0918852 A2 BR PI0918852A2
Authority
BR
Brazil
Prior art keywords
porous
forming
silicon carbide
stick coating
useful process
Prior art date
Application number
BRPI0918852A
Other languages
English (en)
Inventor
Béatrice Drevet
Emmanuel Flahaut
Jean-Paul Garandet
Nicolas Eustathopoulos
Thomas Pietri
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of BRPI0918852A2 publication Critical patent/BRPI0918852A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C23C8/16—Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
BRPI0918852A 2008-09-05 2009-09-03 processo útil para formar um revestimento anti-aderente, poroso e constituído de grãos de carboneto de silício, e , material BRPI0918852A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0855971A FR2935618B1 (fr) 2008-09-05 2008-09-05 Procede pour former un revetement anti-adherent a base de carbure de silicium
PCT/FR2009/051666 WO2010026342A1 (fr) 2008-09-05 2009-09-03 Procede pour former un revetement anti-adherent a base de carbure de silicium

Publications (1)

Publication Number Publication Date
BRPI0918852A2 true BRPI0918852A2 (pt) 2015-12-08

Family

ID=40429256

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0918852A BRPI0918852A2 (pt) 2008-09-05 2009-09-03 processo útil para formar um revestimento anti-aderente, poroso e constituído de grãos de carboneto de silício, e , material

Country Status (9)

Country Link
US (1) US20110268958A1 (pt)
EP (1) EP2347037A1 (pt)
JP (1) JP5492208B2 (pt)
KR (1) KR101451322B1 (pt)
CN (1) CN102144053B (pt)
BR (1) BRPI0918852A2 (pt)
FR (1) FR2935618B1 (pt)
RU (1) RU2479679C2 (pt)
WO (1) WO2010026342A1 (pt)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2979638A1 (fr) * 2011-09-05 2013-03-08 Commissariat Energie Atomique Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme
CN102861711B (zh) * 2012-06-15 2014-04-16 江苏同力机械有限公司 电梯或扶梯表面不粘涂层的喷涂工艺
EP2864529A1 (en) * 2012-06-25 2015-04-29 Silicor Materials Inc. Lining for surfaces of a refractory crucible for purification of silicon melt and method of purification of the silicon melt using that crucible (s) for melting and further directional solidification
FR3010715B1 (fr) * 2013-09-16 2017-03-10 Commissariat Energie Atomique Substrat a revetement peu permeable pour solidification de silicium
FR3026414B1 (fr) * 2014-09-26 2019-04-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Creuset pour la cristallisation de silicium multi-cristallin ou quasi-monocristallin par reprise sur germe
KR101673720B1 (ko) * 2014-12-30 2016-11-23 현대자동차주식회사 김서림 방지용 다공성 실리카 박막의 제조방법
US10801097B2 (en) * 2015-12-23 2020-10-13 Praxair S.T. Technology, Inc. Thermal spray coatings onto non-smooth surfaces
CN107382364A (zh) * 2017-06-30 2017-11-24 长兴泓矿炉料有限公司 一种轻量低损耗碳化硅系耐火材料及其制备方法
CN107311671A (zh) * 2017-06-30 2017-11-03 长兴泓矿炉料有限公司 一种抗氧化碳化硅系耐火材料及其制备方法
JP7145773B2 (ja) * 2019-01-29 2022-10-03 株式会社フジミインコーポレーテッド 被覆粒子
RU2728985C1 (ru) * 2019-12-30 2020-08-03 Федеральное государственное автономное образовательное учреждение высшего образования "Сибирский федеральный университет" Способ питания электролизера глиноземом и устройство для его осуществления
EP4129956B1 (de) * 2021-08-03 2023-10-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur herstellung von beschichteten substraten sowie beschichtetes substrat und dessen verwendung
PL4129958T3 (pl) * 2021-08-03 2024-05-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Sposób wytwarzania powlekanych podłoży, jak i powlekane podłoże i jego zastosowanie
FR3126999B1 (fr) 2021-09-10 2024-04-26 Commissariat Energie Atomique Procédé de fabrication d’un lingot de silicium à partir de germes oxydés en surface
CN117510235B (zh) * 2023-11-24 2025-10-31 上海工程技术大学 一种超亲水-水下超疏油碳化硅陶瓷膜的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6491971B2 (en) * 2000-11-15 2002-12-10 G.T. Equipment Technologies, Inc Release coating system for crucibles
JP2002321037A (ja) * 2001-04-26 2002-11-05 Kyocera Corp シリコン鋳造方法
JP4116914B2 (ja) * 2003-03-27 2008-07-09 京セラ株式会社 シリコン鋳造用鋳型の製造方法、シリコンインゴットの製造方法
US20040211496A1 (en) * 2003-04-25 2004-10-28 Crystal Systems, Inc. Reusable crucible for silicon ingot growth
US7540919B2 (en) * 2005-04-01 2009-06-02 Gt Solar Incorporated Solidification of crystalline silicon from reusable crucible molds
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers

Also Published As

Publication number Publication date
RU2011107880A (ru) 2012-10-10
RU2479679C2 (ru) 2013-04-20
EP2347037A1 (fr) 2011-07-27
CN102144053A (zh) 2011-08-03
CN102144053B (zh) 2014-03-26
JP5492208B2 (ja) 2014-05-14
FR2935618A1 (fr) 2010-03-12
JP2012501944A (ja) 2012-01-26
KR20110069043A (ko) 2011-06-22
FR2935618B1 (fr) 2011-04-01
WO2010026342A1 (fr) 2010-03-11
KR101451322B1 (ko) 2014-10-15
US20110268958A1 (en) 2011-11-03

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2477 DE 26-06-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.