BRPI0923536A2 - método para produção de camadas livres de assentamento, delgadas, de materiais de estado sólido com superfícies estruturadas - Google Patents

método para produção de camadas livres de assentamento, delgadas, de materiais de estado sólido com superfícies estruturadas

Info

Publication number
BRPI0923536A2
BRPI0923536A2 BRPI0923536A BRPI0923536A BRPI0923536A2 BR PI0923536 A2 BRPI0923536 A2 BR PI0923536A2 BR PI0923536 A BRPI0923536 A BR PI0923536A BR PI0923536 A BRPI0923536 A BR PI0923536A BR PI0923536 A2 BRPI0923536 A2 BR PI0923536A2
Authority
BR
Brazil
Prior art keywords
free
structured surface
producing thin
surface solid
state materials
Prior art date
Application number
BRPI0923536A
Other languages
English (en)
Inventor
Lukas Lichtensteiger
Original Assignee
Siltectra Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltectra Gmbh filed Critical Siltectra Gmbh
Publication of BRPI0923536A2 publication Critical patent/BRPI0923536A2/pt

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00634Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • H10P90/1906Preparing SOI wafers
    • H10P90/1914Preparing SOI wafers using bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/181Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/03Processes for manufacturing substrate-free structures
    • B81C2201/038Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00Severing by tearing or breaking
    • Y10T225/10Methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Printing Methods (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Laser Beam Processing (AREA)
BRPI0923536A 2008-12-23 2009-12-18 método para produção de camadas livres de assentamento, delgadas, de materiais de estado sólido com superfícies estruturadas BRPI0923536A2 (pt)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14046608P 2008-12-23 2008-12-23
US17544709P 2009-05-04 2009-05-04
US17610509P 2009-05-06 2009-05-06
PCT/EP2009/067539 WO2010072675A2 (en) 2008-12-23 2009-12-18 Method for producing thin, free-standing layers of solid state materials with structured surfaces

Publications (1)

Publication Number Publication Date
BRPI0923536A2 true BRPI0923536A2 (pt) 2016-01-26

Family

ID=42288178

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0923536A BRPI0923536A2 (pt) 2008-12-23 2009-12-18 método para produção de camadas livres de assentamento, delgadas, de materiais de estado sólido com superfícies estruturadas

Country Status (12)

Country Link
US (1) US8877077B2 (pt)
EP (3) EP2620409B1 (pt)
JP (1) JP5762973B2 (pt)
KR (1) KR101527627B1 (pt)
CN (1) CN102325717B (pt)
AU (1) AU2009331646A1 (pt)
BR (1) BRPI0923536A2 (pt)
CA (1) CA2747840A1 (pt)
ES (1) ES2418142T3 (pt)
MX (1) MX2011006750A (pt)
RU (1) RU2011130872A (pt)
WO (1) WO2010072675A2 (pt)

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CN101781461B (zh) * 2009-01-16 2012-01-25 清华大学 电致伸缩复合材料及其制备方法
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US8633097B2 (en) 2009-06-09 2014-01-21 International Business Machines Corporation Single-junction photovoltaic cell
US8852994B2 (en) 2010-05-24 2014-10-07 Masimo Semiconductor, Inc. Method of fabricating bifacial tandem solar cells
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US8841203B2 (en) * 2011-06-14 2014-09-23 International Business Machines Corporation Method for forming two device wafers from a single base substrate utilizing a controlled spalling process
US8748296B2 (en) * 2011-06-29 2014-06-10 International Business Machines Corporation Edge-exclusion spalling method for improving substrate reusability
DE102012001620B4 (de) 2012-01-30 2025-02-13 Siltectra Gmbh Verfahren zur Herstellung von dünnen Platten aus Werkstoffen geringer Duktilität
KR101332306B1 (ko) * 2012-03-30 2013-11-22 한국기계연구원 프리스탠딩 나노 박막 제조방법
US20130316538A1 (en) * 2012-05-23 2013-11-28 International Business Machines Corporation Surface morphology generation and transfer by spalling
BR102012016393A2 (pt) * 2012-07-02 2015-04-07 Rexam Beverage Can South America S A Dispositivo de impressão em latas, processo de impressão em latas, lata impressa e blanqueta
DE102012013539A1 (de) 2012-07-06 2014-01-09 Siltectra Gmbh Wafer und Verfahren zur Herstellung von Wafern mit Oberflächenstrukturen
DE102013007673A1 (de) 2013-05-03 2014-11-06 Siltectra Gmbh Verfahren zur Herstellung von Wafern mittels einer vordefinierten Spannungsverteilung
DE102013007671A1 (de) 2013-05-03 2014-11-06 Siltectra Gmbh Verfahren zur Herstellung eines Wafers mit Trägereinheit
DE102013007672A1 (de) 2013-05-03 2014-11-06 Siltectra Gmbh Verfahren und Vorrichtung zur Waferherstellung mit vordefinierter Bruchauslösestelle
DE102013017272A1 (de) 2013-06-06 2014-12-11 Siltectra Gmbh Vorrichtung und Verfahren zum Erzeugen von Schichtanordnungen mittels fluidischer Fließbarriere
US9245955B2 (en) * 2013-06-28 2016-01-26 Stmicroelectronics, Inc. Embedded shape SiGe for strained channel transistors
KR20150006121A (ko) * 2013-07-08 2015-01-16 서울대학교산학협력단 폴리아세틸렌 나노파이버 온도센서
DE102013014615A1 (de) 2013-09-02 2015-03-05 Siltectra Gmbh Vorrichtung und Verfahren zur Herstellung eines Wafers mit einer Rissverlaufsbeeinflussung
DE102013014623A1 (de) 2013-09-02 2015-03-05 Siltectra Gmbh Vorrichtung und Verfahren zur Herstellung eines Wafers mit einer selektiven Positionierung im Trägersystem
DE102013016682A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Erzeugung einer Rissauslösestelle oder einer Rissführung zum verbesserten Abspalten einer Festkörperschicht von einem Festkörper
DE102014014486A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Neuartiges Waferherstellungsverfahren
DE102014013107A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Neuartiges Waferherstellungsverfahren
DE102013016693A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Herstellungsverfahren für Festkörperelemente mittels Laserbehandlung und temperaturinduzierten Spannungen
DE102013016669A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Kombiniertes Herstellungsverfahren zum Abtrennen mehrerer dünner Festkörperschichten von einem dicken Festkörper
DE102013016665A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit lonenimplantation und temperaturinduzierten Spannungen
US20150201504A1 (en) * 2014-01-15 2015-07-16 Applied Nanotech, Inc. Copper particle composition
DE102015000449A1 (de) 2015-01-15 2016-07-21 Siltectra Gmbh Festkörperteilung mittels Stoffumwandlung
DE102014004574A1 (de) 2014-03-28 2015-10-01 Siltectra Gmbh Verfahren zur Herstellung von Festkörperschichten mittels lokaler Modifikation von Leit-Stütz-Struktur-Eigenschaften einer mehrschichtigen Anordnung
DE102014006328A1 (de) * 2014-04-30 2015-11-05 Siltectra Gmbh Kombiniertes Festkörperherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen zur Erzeugung dreidimensionaler Festkörper
DE102014014422A1 (de) 2014-09-29 2016-03-31 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit einer Löcher aufweisenden Aufnahmeschicht
DE102014014420A1 (de) * 2014-09-29 2016-04-14 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit einer Mehrkomponentenaufnahmeschicht
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CN107000125B (zh) 2014-11-27 2022-08-12 西尔特克特拉有限责任公司 基于激光器的分离方法
CN108838562B (zh) * 2014-11-27 2021-08-17 西尔特克特拉有限责任公司 借助于材料转化的固体分开
DE102015000450A1 (de) * 2015-01-15 2016-07-21 Siltectra Gmbh Abtrennvorrichtung zum spanfreien Abtrennen von Wafern von Spendersubstraten
DE102015003369A1 (de) 2015-03-16 2016-09-22 Siltectra Gmbh Transparenter und hochstabiler Displayschutz
DE102015104147B4 (de) 2015-03-19 2019-09-12 Osram Opto Semiconductors Gmbh Verfahren zur Ablösung eines Aufwachssubstrats von einer Schichtenfolge
DE102015004347A1 (de) 2015-04-02 2016-10-06 Siltectra Gmbh Erzeugung von physischen Modifikationen mittels LASER im Inneren eines Festkörpers
DE102015004603A1 (de) 2015-04-09 2016-10-13 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen
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Also Published As

Publication number Publication date
RU2011130872A (ru) 2013-01-27
US20110259936A1 (en) 2011-10-27
JP5762973B2 (ja) 2015-08-12
EP2620408B1 (en) 2016-03-09
EP2620409B1 (en) 2017-03-01
EP2379440A2 (en) 2011-10-26
EP2620409A1 (en) 2013-07-31
EP2620408A1 (en) 2013-07-31
KR101527627B1 (ko) 2015-06-10
CN102325717B (zh) 2015-11-25
US8877077B2 (en) 2014-11-04
CN102325717A (zh) 2012-01-18
MX2011006750A (es) 2011-09-06
CA2747840A1 (en) 2010-07-01
ES2418142T3 (es) 2013-08-12
WO2010072675A2 (en) 2010-07-01
AU2009331646A8 (en) 2011-08-04
JP2012513312A (ja) 2012-06-14
EP2379440B1 (en) 2013-04-17
WO2010072675A3 (en) 2011-04-14
AU2009331646A2 (en) 2011-09-15
AU2009331646A1 (en) 2011-07-28
KR20110110781A (ko) 2011-10-07

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Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2377 DE 26-07-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.