BRPI1008737A2 - método para fabricar elemento semicondutor - Google Patents

método para fabricar elemento semicondutor

Info

Publication number
BRPI1008737A2
BRPI1008737A2 BRPI1008737A BRPI1008737A BRPI1008737A2 BR PI1008737 A2 BRPI1008737 A2 BR PI1008737A2 BR PI1008737 A BRPI1008737 A BR PI1008737A BR PI1008737 A BRPI1008737 A BR PI1008737A BR PI1008737 A2 BRPI1008737 A2 BR PI1008737A2
Authority
BR
Brazil
Prior art keywords
semiconductor element
fabricating semiconductor
fabricating
semiconductor
Prior art date
Application number
BRPI1008737A
Other languages
English (en)
Inventor
Hiroaki Tamemoto
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=42665396&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=BRPI1008737(A2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to BR122019015544-5A priority Critical patent/BR122019015544B1/pt
Publication of BRPI1008737A2 publication Critical patent/BRPI1008737A2/pt
Publication of BRPI1008737B1 publication Critical patent/BRPI1008737B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568—Modifying rugosity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
BRPI1008737-0A 2009-02-25 2010-02-04 método para fabricar elemento semicondutor BRPI1008737B1 (pt)

Priority Applications (1)

Application Number Priority Date Filing Date Title
BR122019015544-5A BR122019015544B1 (pt) 2009-02-25 2010-02-04 método para fabricar um elemento semicondutor, e, elemento semicondutor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009041966 2009-02-25
JP2009-041966 2009-02-25
PCT/JP2010/051557 WO2010098186A1 (ja) 2009-02-25 2010-02-04 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
BRPI1008737A2 true BRPI1008737A2 (pt) 2016-03-08
BRPI1008737B1 BRPI1008737B1 (pt) 2019-10-29

Family

ID=42665396

Family Applications (2)

Application Number Title Priority Date Filing Date
BRPI1008737-0A BRPI1008737B1 (pt) 2009-02-25 2010-02-04 método para fabricar elemento semicondutor
BR122019015544-5A BR122019015544B1 (pt) 2009-02-25 2010-02-04 método para fabricar um elemento semicondutor, e, elemento semicondutor

Family Applications After (1)

Application Number Title Priority Date Filing Date
BR122019015544-5A BR122019015544B1 (pt) 2009-02-25 2010-02-04 método para fabricar um elemento semicondutor, e, elemento semicondutor

Country Status (8)

Country Link
US (2) US8728916B2 (pt)
EP (1) EP2402984B1 (pt)
JP (1) JP5573832B2 (pt)
KR (1) KR101697383B1 (pt)
CN (1) CN102326232B (pt)
BR (2) BRPI1008737B1 (pt)
TW (1) TWI564947B (pt)
WO (1) WO2010098186A1 (pt)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5620669B2 (ja) * 2009-10-26 2014-11-05 東芝機械株式会社 レーザダイシング方法およびレーザダイシング装置
DE102010009015A1 (de) * 2010-02-24 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips
JP5981094B2 (ja) 2010-06-24 2016-08-31 東芝機械株式会社 ダイシング方法
TWI469842B (zh) * 2010-09-30 2015-01-21 Mitsuboshi Diamond Ind Co Ltd 雷射加工裝置、被加工物之加工方法及被加工物之分割方法
JP5240267B2 (ja) * 2010-09-30 2013-07-17 三星ダイヤモンド工業株式会社 レーザー加工装置、被加工物の加工方法および被加工物の分割方法
JP5333399B2 (ja) * 2010-09-30 2013-11-06 三星ダイヤモンド工業株式会社 レーザー加工装置、被加工物の加工方法および被加工物の分割方法
JP5240272B2 (ja) * 2010-10-15 2013-07-17 三星ダイヤモンド工業株式会社 レーザー加工装置、被加工物の加工方法および被加工物の分割方法
JP2013042119A (ja) * 2011-07-21 2013-02-28 Hamamatsu Photonics Kk 発光素子の製造方法
JP2013046924A (ja) * 2011-07-27 2013-03-07 Toshiba Mach Co Ltd レーザダイシング方法
JP5140198B1 (ja) * 2011-07-27 2013-02-06 東芝機械株式会社 レーザダイシング方法
JP2013027887A (ja) * 2011-07-27 2013-02-07 Toshiba Mach Co Ltd レーザダイシング方法
US9821408B2 (en) 2011-09-16 2017-11-21 Hamamatsu Photonics K.K. Laser machining method and laser machining device
JP2013118277A (ja) * 2011-12-02 2013-06-13 Mitsuboshi Diamond Industrial Co Ltd Ｌｅｄパターン付き基板の加工方法
JP5910075B2 (ja) * 2011-12-27 2016-04-27 三星ダイヤモンド工業株式会社 被加工物の加工方法
JP5967405B2 (ja) * 2012-01-17 2016-08-10 アイシン精機株式会社 レーザによる割断方法、及びレーザ割断装置
JP6128758B2 (ja) * 2012-06-07 2017-05-17 晶元光電股▲ふん▼有限公司 発光素子の製造方法
JP5882154B2 (ja) * 2012-07-19 2016-03-09 太陽誘電株式会社 弾性波デバイスの製造方法
JP2014041924A (ja) * 2012-08-22 2014-03-06 Hamamatsu Photonics Kk 加工対象物切断方法
JP5360278B2 (ja) * 2012-09-27 2013-12-04 三星ダイヤモンド工業株式会社 レーザー加工装置、被加工物の加工方法および被加工物の分割方法
JP5360277B2 (ja) * 2012-09-27 2013-12-04 三星ダイヤモンド工業株式会社 被加工物分割用のレーザー加工装置、被加工物の加工方法および被加工物の分割方法
JP6003496B2 (ja) * 2012-10-02 2016-10-05 三星ダイヤモンド工業株式会社 パターン付き基板の加工方法
TWI471188B (zh) * 2012-10-19 2015-02-01 Metal Ind Res & Dev Ct 硬脆材料切割方法
JP6064519B2 (ja) * 2012-10-29 2017-01-25 三星ダイヤモンド工業株式会社 レーザー加工装置、および、パターン付き基板の加工条件設定方法
WO2014079478A1 (en) 2012-11-20 2014-05-30 Light In Light Srl High speed laser processing of transparent materials
US8809166B2 (en) * 2012-12-20 2014-08-19 Nxp B.V. High die strength semiconductor wafer processing method and system
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
EP2781296B1 (de) * 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
EP3042956A4 (en) 2013-09-05 2017-03-15 University of Miyazaki Antibody which specifically reacts with human integrin a6b4
JP2015074003A (ja) * 2013-10-07 2015-04-20 信越ポリマー株式会社 内部加工層形成単結晶部材およびその製造方法
JP6531885B2 (ja) * 2013-10-07 2019-06-19 信越ポリマー株式会社 内部加工層形成単結晶部材およびその製造方法
US9701563B2 (en) 2013-12-17 2017-07-11 Corning Incorporated Laser cut composite glass article and method of cutting
US9676167B2 (en) 2013-12-17 2017-06-13 Corning Incorporated Laser processing of sapphire substrate and related applications
US9815730B2 (en) 2013-12-17 2017-11-14 Corning Incorporated Processing 3D shaped transparent brittle substrate
US10293436B2 (en) 2013-12-17 2019-05-21 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US20150165560A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Laser processing of slots and holes
US9850160B2 (en) 2013-12-17 2017-12-26 Corning Incorporated Laser cutting of display glass compositions
US10442719B2 (en) 2013-12-17 2019-10-15 Corning Incorporated Edge chamfering methods
JP6336817B2 (ja) * 2014-05-12 2018-06-06 太陽誘電株式会社 弾性波デバイス及びその製造方法
JP6318900B2 (ja) 2014-06-18 2018-05-09 日亜化学工業株式会社 半導体発光素子の製造方法
US9093518B1 (en) * 2014-06-30 2015-07-28 Applied Materials, Inc. Singulation of wafers having wafer-level underfill
US9165832B1 (en) 2014-06-30 2015-10-20 Applied Materials, Inc. Method of die singulation using laser ablation and induction of internal defects with a laser
KR102445217B1 (ko) 2014-07-08 2022-09-20 코닝 인코포레이티드 재료를 레이저 가공하는 방법 및 장치
WO2016010949A1 (en) 2014-07-14 2016-01-21 Corning Incorporated Method and system for forming perforations
EP3536440A1 (en) 2014-07-14 2019-09-11 Corning Incorporated Glass article with a defect pattern
LT3169477T (lt) 2014-07-14 2020-05-25 Corning Incorporated Skaidrių medžiagų apdorojimo sistema ir būdas, naudojant lazerio pluošto židinio linijas, kurių ilgis ir skersmuo yra reguliuojami
WO2016010991A1 (en) 2014-07-14 2016-01-21 Corning Incorporated Interface block; system for and method of cutting a substrate being transparent within a range of wavelengths using such interface block
US12007077B2 (en) 2014-09-28 2024-06-11 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
US11997768B2 (en) 2014-09-28 2024-05-28 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11543083B2 (en) 2014-09-28 2023-01-03 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11525547B2 (en) 2014-09-28 2022-12-13 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11421827B2 (en) 2015-06-19 2022-08-23 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11686436B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and light bulb using LED filament
US11073248B2 (en) 2014-09-28 2021-07-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
US11085591B2 (en) 2014-09-28 2021-08-10 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US10047001B2 (en) 2014-12-04 2018-08-14 Corning Incorporated Glass cutting systems and methods using non-diffracting laser beams
JP2018507154A (ja) 2015-01-12 2018-03-15 コーニング インコーポレイテッド マルチフォトン吸収方法を用いた熱強化基板のレーザー切断
JP6395633B2 (ja) 2015-02-09 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6395632B2 (ja) 2015-02-09 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6494334B2 (ja) * 2015-03-05 2019-04-03 株式会社ディスコ デバイスチップの製造方法
WO2016154284A1 (en) 2015-03-24 2016-09-29 Corning Incorporated Laser cutting and processing of display glass compositions
CN107666983B (zh) 2015-03-27 2020-10-02 康宁股份有限公司 可透气窗及其制造方法
JP6494382B2 (ja) 2015-04-06 2019-04-03 株式会社ディスコ ウエーハの生成方法
JP6429715B2 (ja) 2015-04-06 2018-11-28 株式会社ディスコ ウエーハの生成方法
JP6425606B2 (ja) 2015-04-06 2018-11-21 株式会社ディスコ ウエーハの生成方法
JP6472333B2 (ja) * 2015-06-02 2019-02-20 株式会社ディスコ ウエーハの生成方法
JP6265175B2 (ja) * 2015-06-30 2018-01-24 日亜化学工業株式会社 半導体素子の製造方法
KR102499697B1 (ko) 2015-07-10 2023-02-14 코닝 인코포레이티드 유연한 기판 시트에서의 홀의 연속 제조 방법 및 이에 관한 물품
JP6482423B2 (ja) 2015-07-16 2019-03-13 株式会社ディスコ ウエーハの生成方法
JP6482425B2 (ja) 2015-07-21 2019-03-13 株式会社ディスコ ウエーハの薄化方法
JP6472347B2 (ja) 2015-07-21 2019-02-20 株式会社ディスコ ウエーハの薄化方法
US10898975B2 (en) * 2015-08-18 2021-01-26 Hamamatsu Photonics K.K. Laser machining device and laser machining method
JP6594699B2 (ja) * 2015-08-18 2019-10-23 浜松ホトニクス株式会社 加工対象物切断方法及び加工対象物切断装置
JP6510933B2 (ja) * 2015-08-21 2019-05-08 株式会社ディスコ 光デバイスウエーハの加工方法
JP6245239B2 (ja) 2015-09-11 2017-12-13 日亜化学工業株式会社 半導体レーザ素子の製造方法
JP6529414B2 (ja) * 2015-10-15 2019-06-12 株式会社ディスコ ウエーハの加工方法
WO2017078368A1 (ko) * 2015-11-05 2017-05-11 서울바이오시스주식회사 자외선 발광 소자 및 그것을 제조하는 방법
JP6690983B2 (ja) 2016-04-11 2020-04-28 株式会社ディスコ ウエーハ生成方法及び実第２のオリエンテーションフラット検出方法
KR102405144B1 (ko) 2016-05-06 2022-06-07 코닝 인코포레이티드 투명 기판들로부터의 윤곽 형상들의 레이저 절단 및 제거
CN107398644A (zh) * 2016-05-18 2017-11-28 南京魔迪多维数码科技有限公司 一种切割脆性材料的方法
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
WO2017217335A1 (ja) * 2016-06-13 2017-12-21 三菱電機株式会社 半導体装置の製造方法
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
JP7090594B2 (ja) 2016-07-29 2022-06-24 コーニング インコーポレイテッド レーザ加工するための装置および方法
US10522963B2 (en) 2016-08-30 2019-12-31 Corning Incorporated Laser cutting of materials with intensity mapping optical system
WO2018064409A1 (en) 2016-09-30 2018-04-05 Corning Incorporated Apparatuses and methods for laser processing transparent workpieces using non-axisymmetric beam spots
LT3529214T (lt) 2016-10-24 2021-02-25 Corning Incorporated Substrato apdorojimo stotis lakšto formos stiklo substratų lazeriniam mašininiam apdorojimui
US10752534B2 (en) 2016-11-01 2020-08-25 Corning Incorporated Apparatuses and methods for laser processing laminate workpiece stacks
US10688599B2 (en) 2017-02-09 2020-06-23 Corning Incorporated Apparatus and methods for laser processing transparent workpieces using phase shifted focal lines
JP6858587B2 (ja) 2017-02-16 2021-04-14 株式会社ディスコ ウエーハ生成方法
JP6620825B2 (ja) * 2017-02-27 2019-12-18 日亜化学工業株式会社 半導体素子の製造方法
JP6747353B2 (ja) * 2017-03-29 2020-08-26 豊田合成株式会社 半導体発光素子とその製造方法
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10626040B2 (en) 2017-06-15 2020-04-21 Corning Incorporated Articles capable of individual singulation
DE102017212858B4 (de) * 2017-07-26 2024-08-29 Disco Corporation Verfahren zum Bearbeiten eines Substrats
JP6980444B2 (ja) * 2017-07-28 2021-12-15 浜松ホトニクス株式会社 積層型素子の製造方法
JP6579397B2 (ja) * 2017-08-30 2019-09-25 日亜化学工業株式会社 発光素子の製造方法
JP6896344B2 (ja) * 2017-09-22 2021-06-30 株式会社ディスコ チップの製造方法
KR102563724B1 (ko) * 2017-11-29 2023-08-07 니치아 카가쿠 고교 가부시키가이샤 반도체 발광 소자의 제조 방법
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US10982048B2 (en) 2018-04-17 2021-04-20 Jiaxing Super Lighting Electric Appliance Co., Ltd Organosilicon-modified polyimide resin composition and use thereof
JP7171353B2 (ja) * 2018-10-04 2022-11-15 浜松ホトニクス株式会社 レーザ加工方法、半導体デバイス製造方法及び検査装置
JP7200670B2 (ja) * 2018-12-27 2023-01-10 富士通オプティカルコンポーネンツ株式会社 光モジュール及びその製造方法
DE102019201438B4 (de) * 2019-02-05 2024-05-02 Disco Corporation Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats
JP6819897B2 (ja) * 2019-08-28 2021-01-27 日亜化学工業株式会社 発光素子の製造方法
WO2021176526A1 (ja) * 2020-03-02 2021-09-10 株式会社信光社 レーザー割断方法
JP7488682B2 (ja) * 2020-04-02 2024-05-22 浜松ホトニクス株式会社 レーザ加工装置及び検査方法
EP3913660B1 (en) * 2020-05-22 2024-06-19 Nichia Corporation Method of cutting semiconductor element and semiconductor element
US11835492B2 (en) 2020-08-14 2023-12-05 Changxin Memory Technologies, Inc. Method for preparing sample for wafer level failure analysis
CN114076697A (zh) * 2020-08-14 2022-02-22 长鑫存储技术有限公司 半导体失效分析样品的制备方法
JP2022099659A (ja) * 2020-12-23 2022-07-05 Ｄｇｓｈａｐｅ株式会社 歯冠補綴物の製造方法
WO2022252137A1 (zh) * 2021-06-02 2022-12-08 泉州三安半导体科技有限公司 发光二极管及其制作方法
JP7840806B2 (ja) * 2022-07-15 2026-04-06 日本発條株式会社 プローブホルダおよびプローブユニット
US20240222127A1 (en) * 2022-12-29 2024-07-04 Hua Hsu Silicon Materials Co., Ltd. Method for wafer treatment

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656186A (en) 1994-04-08 1997-08-12 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
JP4762458B2 (ja) 2000-09-13 2011-08-31 浜松ホトニクス株式会社 レーザ加工装置
JP2003001473A (ja) * 2000-09-13 2003-01-08 Hamamatsu Photonics Kk レーザ加工装置
JP3722731B2 (ja) 2000-09-13 2005-11-30 浜松ホトニクス株式会社 レーザ加工方法
JP3626442B2 (ja) * 2000-09-13 2005-03-09 浜松ホトニクス株式会社 レーザ加工方法
JP2003039186A (ja) * 2000-09-13 2003-02-12 Hamamatsu Photonics Kk レーザ加工方法
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
AU2003211763A1 (en) 2002-03-12 2003-09-22 Hamamatsu Photonics K.K. Method for dicing substrate
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
JP4851060B2 (ja) 2002-03-12 2012-01-11 浜松ホトニクス株式会社 半導体レーザ素子の製造方法
WO2003076119A1 (fr) 2002-03-12 2003-09-18 Hamamatsu Photonics K.K. Procede de decoupe d'objet traite
TWI520269B (zh) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
JP2005268752A (ja) * 2004-02-19 2005-09-29 Canon Inc レーザ割断方法、被割断部材および半導体素子チップ
CN100527360C (zh) 2004-03-30 2009-08-12 浜松光子学株式会社 激光加工方法及半导体芯片
JP4200177B2 (ja) * 2004-08-06 2008-12-24 浜松ホトニクス株式会社 レーザ加工方法及び半導体装置
JP4917257B2 (ja) * 2004-11-12 2012-04-18 浜松ホトニクス株式会社 レーザ加工方法
JP4684717B2 (ja) 2005-04-06 2011-05-18 株式会社ディスコ ウエーハのレーザー加工方法およびレーザー加工装置
JP4907984B2 (ja) * 2005-12-27 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップ
JP2007317935A (ja) * 2006-05-26 2007-12-06 Canon Inc 半導体基板、基板割断方法、および素子チップ製造方法
US20070298529A1 (en) * 2006-05-31 2007-12-27 Toyoda Gosei, Co., Ltd. Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
JP5221007B2 (ja) 2006-05-31 2013-06-26 アイシン精機株式会社 発光ダイオードチップ及びウェハ分割加工方法
JP5232375B2 (ja) * 2006-10-13 2013-07-10 アイシン精機株式会社 半導体発光素子の分離方法
JP4909657B2 (ja) 2006-06-30 2012-04-04 株式会社ディスコ サファイア基板の加工方法

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BR122019015544B1 (pt) 2020-12-22
US9324791B2 (en) 2016-04-26
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