BRPI1011202A2 - dispositivo semicondutor - Google Patents
dispositivo semicondutorInfo
- Publication number
- BRPI1011202A2 BRPI1011202A2 BRPI1011202A BRPI1011202A BRPI1011202A2 BR PI1011202 A2 BRPI1011202 A2 BR PI1011202A2 BR PI1011202 A BRPI1011202 A BR PI1011202A BR PI1011202 A BRPI1011202 A BR PI1011202A BR PI1011202 A2 BRPI1011202 A2 BR PI1011202A2
- Authority
- BR
- Brazil
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
- H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009138470 | 2009-06-09 | ||
| PCT/JP2010/059246 WO2010143557A1 (ja) | 2009-06-09 | 2010-06-01 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI1011202A2 true BRPI1011202A2 (pt) | 2016-03-15 |
Family
ID=43308812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI1011202A BRPI1011202A2 (pt) | 2009-06-09 | 2010-06-01 | dispositivo semicondutor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8598667B2 (pt) |
| EP (1) | EP2442366B1 (pt) |
| JP (1) | JP5269991B2 (pt) |
| CN (1) | CN102460711B (pt) |
| BR (1) | BRPI1011202A2 (pt) |
| RU (1) | RU2488191C1 (pt) |
| WO (1) | WO2010143557A1 (pt) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9817032B2 (en) * | 2012-05-23 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Measurement device |
| US20150022211A1 (en) * | 2013-07-19 | 2015-01-22 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Detection circuit for display panel |
| CN103944154A (zh) | 2013-12-11 | 2014-07-23 | 厦门天马微电子有限公司 | 一种静电保护电路及液晶显示器 |
| CN105701440B (zh) * | 2014-12-11 | 2019-01-15 | 义隆电子股份有限公司 | 具静电防护的指纹感测器 |
| US9984275B2 (en) * | 2016-03-30 | 2018-05-29 | Elan Microelectronics Corporation | Fingerprint sensor having electrostatic discharge protection |
| CN106950775A (zh) * | 2017-05-16 | 2017-07-14 | 京东方科技集团股份有限公司 | 一种阵列基板和显示装置 |
| US10578800B2 (en) * | 2017-06-06 | 2020-03-03 | Sifotonics Technologies Co., Ltd. | Silicon photonic integrated circuit with electrostatic discharge protection mechanism for static electric shocks |
| CN117457589A (zh) * | 2023-02-23 | 2024-01-26 | 广州华星光电半导体显示技术有限公司 | 阵列基板及显示面板 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5916378A (ja) * | 1982-07-19 | 1984-01-27 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JPS6179258A (ja) * | 1984-09-26 | 1986-04-22 | Seiko Instr & Electronics Ltd | 薄膜2端子素子 |
| JPS62102566A (ja) * | 1985-10-29 | 1987-05-13 | Sharp Corp | 化合物半導体装置 |
| JP2780289B2 (ja) * | 1988-11-17 | 1998-07-30 | セイコーエプソン株式会社 | 半導体装置 |
| JPH03206666A (ja) | 1990-01-08 | 1991-09-10 | Ricoh Co Ltd | 一導電型mos型半導体装置の保護回路 |
| JP3348734B2 (ja) | 1992-07-30 | 2002-11-20 | ソニー株式会社 | 保護回路 |
| JPH06204477A (ja) * | 1993-01-07 | 1994-07-22 | Seiko Epson Corp | 半導体装置 |
| JP2616721B2 (ja) | 1994-11-22 | 1997-06-04 | 日本電気株式会社 | 半導体集積回路装置 |
| US5610790A (en) * | 1995-01-20 | 1997-03-11 | Xilinx, Inc. | Method and structure for providing ESD protection for silicon on insulator integrated circuits |
| KR0145615B1 (ko) | 1995-03-13 | 1998-12-01 | 김광호 | 박막 트랜지스터 액정 표시장치의 구동장치 |
| KR100206567B1 (ko) | 1995-09-07 | 1999-07-01 | 윤종용 | 박막 트랜지스터 액정표시장치의 화면 지움 회로와 그 구동방법 |
| KR100188109B1 (ko) | 1995-12-13 | 1999-06-01 | 김광호 | 오프전압의 레벨이 조절되는 오프전압 발생회로 |
| JP3111944B2 (ja) | 1997-10-20 | 2000-11-27 | 日本電気株式会社 | アクティブマトリクス液晶表示装置 |
| JPH11174970A (ja) * | 1997-12-16 | 1999-07-02 | Hitachi Ltd | 薄膜デバイス |
| JP4057716B2 (ja) | 1998-09-25 | 2008-03-05 | 東芝松下ディスプレイテクノロジー株式会社 | 保護回路を具えた絶縁ゲート型トランジスタ回路装置 |
| JP3729082B2 (ja) | 2001-04-25 | 2005-12-21 | 日本電信電話株式会社 | 半導体保護回路 |
| CN100538486C (zh) | 2002-12-25 | 2009-09-09 | 株式会社半导体能源研究所 | 液晶显示装置 |
| JP4440244B2 (ja) | 2002-12-25 | 2010-03-24 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US6909149B2 (en) * | 2003-04-16 | 2005-06-21 | Sarnoff Corporation | Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies |
| RU2003111439A (ru) * | 2003-04-22 | 2004-11-20 | Общество с ограниченной ответственностью "Юник Ай Сиз" (RU) | Схема защиты кмоп-схем от электростатических разрядов |
| JP4574158B2 (ja) * | 2003-10-28 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体表示装置及びその作製方法 |
| JP4207858B2 (ja) * | 2004-07-05 | 2009-01-14 | セイコーエプソン株式会社 | 半導体装置、表示装置及び電子機器 |
| US7405861B2 (en) * | 2004-09-27 | 2008-07-29 | Idc, Llc | Method and device for protecting interferometric modulators from electrostatic discharge |
| KR20060082517A (ko) * | 2005-01-12 | 2006-07-19 | 삼성전자주식회사 | 박막트랜지스터 기판 및 그 검사방법 |
| TWI260094B (en) * | 2005-06-13 | 2006-08-11 | Au Optronics Corp | Active device matrix substrate |
| JP4039446B2 (ja) * | 2005-08-02 | 2008-01-30 | エプソンイメージングデバイス株式会社 | 電気光学装置及び電子機器 |
| JP2007042775A (ja) * | 2005-08-02 | 2007-02-15 | Sanyo Epson Imaging Devices Corp | 保護ダイオード、保護ダイオードの製造方法、及び電気光学装置 |
| RU2308146C2 (ru) * | 2005-12-13 | 2007-10-10 | Общество с ограниченной ответственностью "Юник Ай Сиз" | Устройство защиты выводов интегральных схем со структурой мдп от электростатических разрядов |
| KR101404542B1 (ko) | 2006-05-25 | 2014-06-09 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| JP5108389B2 (ja) | 2006-06-05 | 2012-12-26 | 三星電子株式会社 | レベルシフト回路およびこれを搭載した表示装置 |
| KR101196711B1 (ko) | 2006-06-05 | 2012-11-07 | 삼성디스플레이 주식회사 | 레벨 쉬프트 회로 및 이를 탑재한 표시장치 |
| JP4305486B2 (ja) * | 2006-09-28 | 2009-07-29 | エプソンイメージングデバイス株式会社 | 液晶表示パネル |
-
2010
- 2010-06-01 BR BRPI1011202A patent/BRPI1011202A2/pt not_active IP Right Cessation
- 2010-06-01 CN CN201080025949.7A patent/CN102460711B/zh not_active Expired - Fee Related
- 2010-06-01 WO PCT/JP2010/059246 patent/WO2010143557A1/ja not_active Ceased
- 2010-06-01 RU RU2011154093/28A patent/RU2488191C1/ru not_active IP Right Cessation
- 2010-06-01 US US13/376,911 patent/US8598667B2/en not_active Expired - Fee Related
- 2010-06-01 EP EP10786088.4A patent/EP2442366B1/en not_active Not-in-force
- 2010-06-01 JP JP2011518448A patent/JP5269991B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102460711A (zh) | 2012-05-16 |
| EP2442366B1 (en) | 2018-10-17 |
| CN102460711B (zh) | 2014-10-08 |
| EP2442366A1 (en) | 2012-04-18 |
| EP2442366A4 (en) | 2013-06-05 |
| WO2010143557A1 (ja) | 2010-12-16 |
| US20120086081A1 (en) | 2012-04-12 |
| RU2011154093A (ru) | 2013-07-20 |
| US8598667B2 (en) | 2013-12-03 |
| JP5269991B2 (ja) | 2013-08-21 |
| RU2488191C1 (ru) | 2013-07-20 |
| JPWO2010143557A1 (ja) | 2012-11-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] | ||
| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2465 DE 03-04-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |