BRPI1011202A2 - dispositivo semicondutor - Google Patents

dispositivo semicondutor

Info

Publication number
BRPI1011202A2
BRPI1011202A2 BRPI1011202A BRPI1011202A BRPI1011202A2 BR PI1011202 A2 BRPI1011202 A2 BR PI1011202A2 BR PI1011202 A BRPI1011202 A BR PI1011202A BR PI1011202 A BRPI1011202 A BR PI1011202A BR PI1011202 A2 BRPI1011202 A2 BR PI1011202A2
Authority
BR
Brazil
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
BRPI1011202A
Other languages
English (en)
Inventor
Hiroyuki Moriwaki
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of BRPI1011202A2 publication Critical patent/BRPI1011202A2/pt

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136204Arrangements to prevent high voltage or static electricity failures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
BRPI1011202A 2009-06-09 2010-06-01 dispositivo semicondutor BRPI1011202A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009138470 2009-06-09
PCT/JP2010/059246 WO2010143557A1 (ja) 2009-06-09 2010-06-01 半導体装置

Publications (1)

Publication Number Publication Date
BRPI1011202A2 true BRPI1011202A2 (pt) 2016-03-15

Family

ID=43308812

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI1011202A BRPI1011202A2 (pt) 2009-06-09 2010-06-01 dispositivo semicondutor

Country Status (7)

Country Link
US (1) US8598667B2 (pt)
EP (1) EP2442366B1 (pt)
JP (1) JP5269991B2 (pt)
CN (1) CN102460711B (pt)
BR (1) BRPI1011202A2 (pt)
RU (1) RU2488191C1 (pt)
WO (1) WO2010143557A1 (pt)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9817032B2 (en) * 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
US20150022211A1 (en) * 2013-07-19 2015-01-22 Shenzhen China Star Optoelectronics Technology Co., Ltd. Detection circuit for display panel
CN103944154A (zh) 2013-12-11 2014-07-23 厦门天马微电子有限公司 一种静电保护电路及液晶显示器
CN105701440B (zh) * 2014-12-11 2019-01-15 义隆电子股份有限公司 具静电防护的指纹感测器
US9984275B2 (en) * 2016-03-30 2018-05-29 Elan Microelectronics Corporation Fingerprint sensor having electrostatic discharge protection
CN106950775A (zh) * 2017-05-16 2017-07-14 京东方科技集团股份有限公司 一种阵列基板和显示装置
US10578800B2 (en) * 2017-06-06 2020-03-03 Sifotonics Technologies Co., Ltd. Silicon photonic integrated circuit with electrostatic discharge protection mechanism for static electric shocks
CN117457589A (zh) * 2023-02-23 2024-01-26 广州华星光电半导体显示技术有限公司 阵列基板及显示面板

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916378A (ja) * 1982-07-19 1984-01-27 Matsushita Electric Ind Co Ltd 半導体装置
JPS6179258A (ja) * 1984-09-26 1986-04-22 Seiko Instr & Electronics Ltd 薄膜2端子素子
JPS62102566A (ja) * 1985-10-29 1987-05-13 Sharp Corp 化合物半導体装置
JP2780289B2 (ja) * 1988-11-17 1998-07-30 セイコーエプソン株式会社 半導体装置
JPH03206666A (ja) 1990-01-08 1991-09-10 Ricoh Co Ltd 一導電型mos型半導体装置の保護回路
JP3348734B2 (ja) 1992-07-30 2002-11-20 ソニー株式会社 保護回路
JPH06204477A (ja) * 1993-01-07 1994-07-22 Seiko Epson Corp 半導体装置
JP2616721B2 (ja) 1994-11-22 1997-06-04 日本電気株式会社 半導体集積回路装置
US5610790A (en) * 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
KR0145615B1 (ko) 1995-03-13 1998-12-01 김광호 박막 트랜지스터 액정 표시장치의 구동장치
KR100206567B1 (ko) 1995-09-07 1999-07-01 윤종용 박막 트랜지스터 액정표시장치의 화면 지움 회로와 그 구동방법
KR100188109B1 (ko) 1995-12-13 1999-06-01 김광호 오프전압의 레벨이 조절되는 오프전압 발생회로
JP3111944B2 (ja) 1997-10-20 2000-11-27 日本電気株式会社 アクティブマトリクス液晶表示装置
JPH11174970A (ja) * 1997-12-16 1999-07-02 Hitachi Ltd 薄膜デバイス
JP4057716B2 (ja) 1998-09-25 2008-03-05 東芝松下ディスプレイテクノロジー株式会社 保護回路を具えた絶縁ゲート型トランジスタ回路装置
JP3729082B2 (ja) 2001-04-25 2005-12-21 日本電信電話株式会社 半導体保護回路
CN100538486C (zh) 2002-12-25 2009-09-09 株式会社半导体能源研究所 液晶显示装置
JP4440244B2 (ja) 2002-12-25 2010-03-24 株式会社半導体エネルギー研究所 液晶表示装置
US6909149B2 (en) * 2003-04-16 2005-06-21 Sarnoff Corporation Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies
RU2003111439A (ru) * 2003-04-22 2004-11-20 Общество с ограниченной ответственностью "Юник Ай Сиз" (RU) Схема защиты кмоп-схем от электростатических разрядов
JP4574158B2 (ja) * 2003-10-28 2010-11-04 株式会社半導体エネルギー研究所 半導体表示装置及びその作製方法
JP4207858B2 (ja) * 2004-07-05 2009-01-14 セイコーエプソン株式会社 半導体装置、表示装置及び電子機器
US7405861B2 (en) * 2004-09-27 2008-07-29 Idc, Llc Method and device for protecting interferometric modulators from electrostatic discharge
KR20060082517A (ko) * 2005-01-12 2006-07-19 삼성전자주식회사 박막트랜지스터 기판 및 그 검사방법
TWI260094B (en) * 2005-06-13 2006-08-11 Au Optronics Corp Active device matrix substrate
JP4039446B2 (ja) * 2005-08-02 2008-01-30 エプソンイメージングデバイス株式会社 電気光学装置及び電子機器
JP2007042775A (ja) * 2005-08-02 2007-02-15 Sanyo Epson Imaging Devices Corp 保護ダイオード、保護ダイオードの製造方法、及び電気光学装置
RU2308146C2 (ru) * 2005-12-13 2007-10-10 Общество с ограниченной ответственностью "Юник Ай Сиз" Устройство защиты выводов интегральных схем со структурой мдп от электростатических разрядов
KR101404542B1 (ko) 2006-05-25 2014-06-09 삼성디스플레이 주식회사 액정 표시 장치
JP5108389B2 (ja) 2006-06-05 2012-12-26 三星電子株式会社 レベルシフト回路およびこれを搭載した表示装置
KR101196711B1 (ko) 2006-06-05 2012-11-07 삼성디스플레이 주식회사 레벨 쉬프트 회로 및 이를 탑재한 표시장치
JP4305486B2 (ja) * 2006-09-28 2009-07-29 エプソンイメージングデバイス株式会社 液晶表示パネル

Also Published As

Publication number Publication date
CN102460711A (zh) 2012-05-16
EP2442366B1 (en) 2018-10-17
CN102460711B (zh) 2014-10-08
EP2442366A1 (en) 2012-04-18
EP2442366A4 (en) 2013-06-05
WO2010143557A1 (ja) 2010-12-16
US20120086081A1 (en) 2012-04-12
RU2011154093A (ru) 2013-07-20
US8598667B2 (en) 2013-12-03
JP5269991B2 (ja) 2013-08-21
RU2488191C1 (ru) 2013-07-20
JPWO2010143557A1 (ja) 2012-11-22

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2465 DE 03-04-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.