BRPI1010215A2 - dispositivo e método - Google Patents

dispositivo e método

Info

Publication number
BRPI1010215A2
BRPI1010215A2 BRPI1010215A BRPI1010215A BRPI1010215A2 BR PI1010215 A2 BRPI1010215 A2 BR PI1010215A2 BR PI1010215 A BRPI1010215 A BR PI1010215A BR PI1010215 A BRPI1010215 A BR PI1010215A BR PI1010215 A2 BRPI1010215 A2 BR PI1010215A2
Authority
BR
Brazil
Application number
BRPI1010215A
Other languages
English (en)
Inventor
Abbeli Munkholm
Theodore Chung
Original Assignee
Koninkl Philips Electronics Nv
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Philips Lumileds Lighting Co filed Critical Koninkl Philips Electronics Nv
Publication of BRPI1010215A2 publication Critical patent/BRPI1010215A2/pt
Publication of BRPI1010215A8 publication Critical patent/BRPI1010215A8/pt
Publication of BRPI1010215B1 publication Critical patent/BRPI1010215B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
BRPI1010215-9A 2009-06-30 2010-05-27 Dispositivo semicondutor emissor de luz e método para fabricar um dispositivo semicondutor emissor de luz BRPI1010215B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/494,988 US8017958B2 (en) 2009-06-30 2009-06-30 P-contact layer for a III-P semiconductor light emitting device
US12/494,988 2009-06-30
PCT/IB2010/052367 WO2011001308A1 (en) 2009-06-30 2010-05-27 P-contact layer for a iii-p semiconductor light emitting device

Publications (3)

Publication Number Publication Date
BRPI1010215A2 true BRPI1010215A2 (pt) 2017-01-24
BRPI1010215A8 BRPI1010215A8 (pt) 2019-01-02
BRPI1010215B1 BRPI1010215B1 (pt) 2020-03-31

Family

ID=42651335

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI1010215-9A BRPI1010215B1 (pt) 2009-06-30 2010-05-27 Dispositivo semicondutor emissor de luz e método para fabricar um dispositivo semicondutor emissor de luz

Country Status (8)

Country Link
US (2) US8017958B2 (pt)
EP (1) EP2449605B1 (pt)
JP (3) JP5927115B2 (pt)
KR (2) KR101750397B1 (pt)
CN (1) CN102473804B (pt)
BR (1) BRPI1010215B1 (pt)
TW (1) TWI528586B (pt)
WO (1) WO2011001308A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8017958B2 (en) * 2009-06-30 2011-09-13 Koninklijke Philips Electronics N.V. P-contact layer for a III-P semiconductor light emitting device
CN104205366B (zh) * 2012-03-30 2018-08-31 亮锐控股有限公司 密封的半导体发光器件
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
CN103594590B (zh) * 2013-11-07 2017-02-01 溧阳市江大技术转移中心有限公司 一种倒装发光二极管的制造方法
JP6285573B2 (ja) * 2014-05-08 2018-02-28 エルジー イノテック カンパニー リミテッド 発光素子
KR200495562Y1 (ko) 2020-05-18 2022-07-04 주식회사 온슘바이오 농업회사법인 의료용 금사

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* Cited by examiner, † Cited by third party
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US4582952A (en) * 1984-04-30 1986-04-15 Astrosystems, Inc. Gallium arsenide phosphide top solar cell
JP3020542B2 (ja) * 1990-03-30 2000-03-15 株式会社東芝 半導体発光装置
JP2000058910A (ja) * 1990-08-20 2000-02-25 Toshiba Corp 半導体発光ダイオ―ド
JPH05251739A (ja) * 1992-03-06 1993-09-28 Toshiba Corp 半導体発光デバイス
JP3139890B2 (ja) * 1992-08-25 2001-03-05 三菱電線工業株式会社 半導体発光素子
JP3330218B2 (ja) * 1994-03-25 2002-09-30 三菱電機株式会社 半導体装置の製造方法，及び半導体装置
JP2937060B2 (ja) * 1995-01-24 1999-08-23 信越半導体株式会社 ＡｌＧａＩｎＰ系発光装置
EP0720242A3 (en) 1994-12-27 1997-07-30 Shinetsu Handotai Kk AlGaInP semiconductor light emitting device
US5557627A (en) * 1995-05-19 1996-09-17 Sandia Corporation Visible-wavelength semiconductor lasers and arrays
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
JP3420087B2 (ja) * 1997-11-28 2003-06-23 Ｎｅｃエレクトロニクス株式会社 半導体発光素子
JP3552642B2 (ja) * 2000-04-13 2004-08-11 日本電気株式会社 半導体発光素子及びその製造方法
JP2002223040A (ja) * 2001-01-29 2002-08-09 Ricoh Co Ltd 半導体発光素子
US20020104997A1 (en) * 2001-02-05 2002-08-08 Li-Hsin Kuo Semiconductor light emitting diode on a misoriented substrate
US6608328B2 (en) * 2001-02-05 2003-08-19 Uni Light Technology Inc. Semiconductor light emitting diode on a misoriented substrate
JP3791672B2 (ja) * 2001-04-27 2006-06-28 信越半導体株式会社 発光素子及びその製造方法
TW518771B (en) 2001-09-13 2003-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
JP2004207549A (ja) * 2002-12-26 2004-07-22 Hitachi Cable Ltd 発光ダイオードの製造方法
US7019330B2 (en) 2003-08-28 2006-03-28 Lumileds Lighting U.S., Llc Resonant cavity light emitting device
JP4569859B2 (ja) * 2003-11-19 2010-10-27 信越半導体株式会社 発光素子の製造方法
JP4569858B2 (ja) * 2003-11-19 2010-10-27 信越半導体株式会社 発光素子の製造方法
JP4565320B2 (ja) * 2004-05-28 2010-10-20 信越半導体株式会社 発光素子の製造方法
US7244630B2 (en) * 2005-04-05 2007-07-17 Philips Lumileds Lighting Company, Llc A1InGaP LED having reduced temperature dependence
JP4715370B2 (ja) * 2005-07-29 2011-07-06 信越半導体株式会社 発光素子及びその製造方法
JP2007042851A (ja) * 2005-08-03 2007-02-15 Mitsubishi Chemicals Corp 発光ダイオードとその製造方法
CN101370907A (zh) * 2006-01-16 2009-02-18 皇家飞利浦电子股份有限公司 具有含Eu的磷光体材料的发光器件
JP4894411B2 (ja) * 2006-08-23 2012-03-14 日立電線株式会社 半導体発光素子
JP2008218440A (ja) * 2007-02-09 2008-09-18 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤ素子および発光装置
JP2009004477A (ja) * 2007-06-20 2009-01-08 Toshiba Corp 半導体発光素子
WO2009048056A1 (ja) * 2007-10-10 2009-04-16 Shin-Etsu Handotai Co., Ltd. 化合物半導体エピタキシャルウェーハおよびその製造方法
US8017958B2 (en) * 2009-06-30 2011-09-13 Koninklijke Philips Electronics N.V. P-contact layer for a III-P semiconductor light emitting device
JP2015215687A (ja) * 2014-05-08 2015-12-03 パナソニックＩｐマネジメント株式会社 可搬型決済端末装置

Also Published As

Publication number Publication date
KR20170075018A (ko) 2017-06-30
US8017958B2 (en) 2011-09-13
JP2016034036A (ja) 2016-03-10
JP2017118150A (ja) 2017-06-29
JP5927115B2 (ja) 2016-05-25
TW201106501A (en) 2011-02-16
EP2449605B1 (en) 2020-08-26
BRPI1010215A8 (pt) 2019-01-02
TWI528586B (zh) 2016-04-01
CN102473804A (zh) 2012-05-23
US20110284891A1 (en) 2011-11-24
EP2449605A1 (en) 2012-05-09
WO2011001308A1 (en) 2011-01-06
US8816368B2 (en) 2014-08-26
BRPI1010215B1 (pt) 2020-03-31
CN102473804B (zh) 2016-11-23
KR101886733B1 (ko) 2018-08-09
JP2012532438A (ja) 2012-12-13
US20100327299A1 (en) 2010-12-30
KR20120099625A (ko) 2012-09-11
KR101750397B1 (ko) 2017-06-23

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Legal Events

Date Code Title Description
B25D Requested change of name of applicant approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY LLC (US) , KONINKLIJKE PHILIPS N.V. (NL)

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY LLC (US) , KONIN

B25G Requested change of headquarter approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY LLC (US) , KONIN

B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B25D Requested change of name of applicant approved

Owner name: KONINKLIJKE PHILIPS N.V. (NL) ; LUMILEDS LLC (US)

B25A Requested transfer of rights approved

Owner name: LUMILEDS HOLDING B.V. (NL)

B25B Requested transfer of rights rejected

Owner name: LUMILEDS HOLDING B.V. (NL)

Free format text: INDEFERIDO O PEDIDO DE TRANSFERENCIA CONTIDO NA PETICAO 870190039967 DE 29/04/2019, EM VIRTUDE DA SOLICITACAO JA TER SIDO ATENDIDA PELA PETICAO 870190039169 DE 25/04/2019 E PUBLICADA NA RPI2531 DE 09/07/2019.

B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 27/05/2010, OBSERVADAS AS CONDICOES LEGAIS.