DK2249392T3 - Omvendt ledende halvlederenhed - Google Patents
Omvendt ledende halvlederenhed Download PDFInfo
- Publication number
- DK2249392T3 DK2249392T3 DK10154064.9T DK10154064T DK2249392T3 DK 2249392 T3 DK2249392 T3 DK 2249392T3 DK 10154064 T DK10154064 T DK 10154064T DK 2249392 T3 DK2249392 T3 DK 2249392T3
- Authority
- DK
- Denmark
- Prior art keywords
- semiconductor device
- conductive semiconductor
- reverse conductive
- reverse
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09159009 | 2009-04-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK2249392T3 true DK2249392T3 (da) | 2020-08-17 |
Family
ID=40972804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK10154064.9T DK2249392T3 (da) | 2009-04-29 | 2010-02-19 | Omvendt ledende halvlederenhed |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8212283B2 (da) |
| EP (1) | EP2249392B1 (da) |
| JP (1) | JP5697891B2 (da) |
| CN (1) | CN101877352B (da) |
| DK (1) | DK2249392T3 (da) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2339613B1 (en) | 2009-12-22 | 2015-08-19 | ABB Technology AG | Power semiconductor device and method for producing same |
| US8729914B2 (en) * | 2010-11-10 | 2014-05-20 | Infineon Technologies Ag | Detection of the conduction state of an RC-IGBT |
| KR101303422B1 (ko) * | 2011-03-28 | 2013-09-05 | 주식회사 엘지실트론 | 단결정 잉곳의 제조방법 및 이에 의해 제조된 단결정 잉곳과 웨이퍼 |
| JP6037495B2 (ja) * | 2011-10-17 | 2016-12-07 | ローム株式会社 | 半導体装置およびその製造方法 |
| JP5742711B2 (ja) * | 2011-12-28 | 2015-07-01 | 株式会社デンソー | 半導体装置 |
| US9018674B2 (en) * | 2012-04-06 | 2015-04-28 | Infineon Technologies Ag | Reverse conducting insulated gate bipolar transistor |
| WO2014086016A1 (zh) * | 2012-12-06 | 2014-06-12 | 中国科学院微电子研究所 | Rc-igbt及其制作方法 |
| JP6234696B2 (ja) * | 2013-04-16 | 2017-11-22 | ローム株式会社 | 半導体装置 |
| GB2520617B (en) | 2013-10-22 | 2020-12-30 | Abb Schweiz Ag | RC-IGBT with freewheeling SiC diode |
| CN105830221B (zh) | 2013-12-23 | 2017-11-03 | Abb 技术有限公司 | 反向传导半导体装置 |
| EP3105791B1 (en) | 2014-02-14 | 2021-05-26 | ABB Power Grids Switzerland AG | Semiconductor module with two auxiliary emitter conductor paths |
| US9159819B2 (en) | 2014-02-20 | 2015-10-13 | Infineon Technologies Ag | Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode |
| CN104979379A (zh) * | 2014-04-03 | 2015-10-14 | 中国科学院微电子研究所 | 半导体器件的集电极结构及ti-igbt |
| WO2016001182A2 (en) | 2014-06-30 | 2016-01-07 | Abb Technology Ag | Semiconductor device |
| JP6654189B2 (ja) * | 2014-09-15 | 2020-02-26 | アーベーベー・シュバイツ・アーゲー | 薄い半導体ウェハを備える半導体デバイスの製造方法 |
| JP7030515B2 (ja) | 2014-12-23 | 2022-03-07 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 逆導通半導体装置 |
| CN105448972B (zh) * | 2014-12-25 | 2019-04-19 | 深圳深爱半导体股份有限公司 | 反向导通绝缘栅双极型晶体管 |
| JP6873926B2 (ja) | 2015-06-09 | 2021-05-19 | アーベーベー・シュバイツ・アーゲーＡＢＢ Ｓｃｈｗｅｉｚ ＡＧ | 炭化ケイ素パワー半導体デバイスのエッジ終端部を製造する方法 |
| EP3154091A1 (en) | 2015-10-07 | 2017-04-12 | ABB Technology AG | Reverse-conducting semiconductor device |
| EP3198631B1 (en) | 2015-12-02 | 2018-03-07 | ABB Schweiz AG | Method for manufacturing a semiconductor device |
| EP3176812A1 (en) | 2015-12-02 | 2017-06-07 | ABB Schweiz AG | Semiconductor device and method for manufacturing such a semiconductor device |
| JP6817777B2 (ja) * | 2015-12-16 | 2021-01-20 | ローム株式会社 | 半導体装置 |
| EP3223316A1 (en) | 2016-03-24 | 2017-09-27 | ABB Technology AG | Wide bandgap power semiconductor device and method for manufacturing such a device |
| DE102016110035B4 (de) * | 2016-05-31 | 2020-09-10 | Infineon Technologies Ag | Elektrische Baugruppe, die eine bipolare Schaltvorrichtung und einen selbstleitenden Transistor mit breiter Bandlücke umfasst, und eine elektrische Baugruppe, die eine bipolare Schaltvorrichtung und einen selbstleitenden Junction-Feldeffekttransistor umfasst, der einen Halbleiterbereich aus Siliziumcarbid umfasst |
| EP3255676A1 (en) | 2016-06-09 | 2017-12-13 | ABB Schweiz AG | Vertical power semiconductor device and method for operating such a device |
| JP6854598B2 (ja) | 2016-07-06 | 2021-04-07 | ローム株式会社 | 半導体装置 |
| EP3306672A1 (en) | 2016-10-07 | 2018-04-11 | ABB Schweiz AG | Semiconductor device |
| JP7078619B2 (ja) | 2016-11-14 | 2022-05-31 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 並列逆導通ｉｇｂｔおよびワイドバンドギャップスイッチのスイッチング |
| JP6854654B2 (ja) | 2017-01-26 | 2021-04-07 | ローム株式会社 | 半導体装置 |
| CN108417549B (zh) * | 2017-02-09 | 2021-09-24 | 株式会社东芝 | 半导体装置及电气设备 |
| US10439038B2 (en) | 2017-02-09 | 2019-10-08 | Kabushiki Kaisha Toshiba | Semiconductor device and electrical apparatus |
| US10446539B2 (en) * | 2017-02-24 | 2019-10-15 | Nxp B.V. | Electrostatic discharge (ESD) protection device and method for operating an ESD protection device |
| DE112018008221T5 (de) * | 2018-12-19 | 2021-09-02 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
| CN109728085B (zh) * | 2018-12-29 | 2021-10-22 | 安建科技(深圳)有限公司 | 一种逆导型绝缘栅双极性晶体管 |
| CN109830531A (zh) * | 2019-01-15 | 2019-05-31 | 上海华虹宏力半导体制造有限公司 | Rc-igbt器件及其制造方法 |
| GB2584698B (en) | 2019-06-12 | 2022-09-14 | Mqsemi Ag | Non-punch-through reverse-conducting power semiconductor device and method for producing same |
| JP7404702B2 (ja) * | 2019-08-09 | 2023-12-26 | 富士電機株式会社 | 半導体装置 |
| CN112201688B (zh) * | 2020-08-25 | 2023-04-07 | 株洲中车时代半导体有限公司 | 逆导型igbt芯片 |
| CN112768447B (zh) * | 2021-01-11 | 2024-11-12 | 杭州士兰集昕微电子有限公司 | 逆导型绝缘栅双极型晶体管及其制造方法 |
| CN114335157B (zh) * | 2021-12-17 | 2024-01-19 | 贵州振华风光半导体股份有限公司 | 一种纵向双极结型晶体管版图结构 |
| JP7719731B2 (ja) | 2022-01-07 | 2025-08-06 | 株式会社東芝 | 半導体装置 |
| JP7834617B2 (ja) * | 2022-09-14 | 2026-03-24 | 株式会社東芝 | 半導体装置 |
| EP4679506A1 (en) * | 2024-07-09 | 2026-01-14 | Hitachi Energy Ltd | Power semiconductor device |
| EP4687396A1 (en) | 2024-08-01 | 2026-02-04 | Hitachi Energy Ltd | Semiconductor device |
| EP4746296A1 (en) | 2024-11-14 | 2026-05-20 | Hitachi Energy Ltd | ELECTRICAL SWITCHING SYSTEM AND OPERATING METHOD |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0828506B2 (ja) | 1988-11-07 | 1996-03-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| DE59502494D1 (de) | 1994-12-02 | 1998-07-16 | Walter Steiner | Wäschetrockner |
| DE10250575B4 (de) * | 2002-10-30 | 2010-04-15 | Infineon Technologies Ag | IGBT mit monolithisch integrierter antiparalleler Diode |
| JP2005057235A (ja) | 2003-07-24 | 2005-03-03 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路 |
| JP4415767B2 (ja) * | 2004-06-14 | 2010-02-17 | サンケン電気株式会社 | 絶縁ゲート型半導体素子、及びその製造方法 |
| DE102005019178A1 (de) * | 2005-04-25 | 2006-11-02 | Infineon Technologies Ag | Halbleiterbauelement, insbesondere rückwärts leitender IGBT |
| JP5157201B2 (ja) * | 2006-03-22 | 2013-03-06 | 株式会社デンソー | 半導体装置 |
| DE102006050338B4 (de) * | 2006-10-25 | 2011-12-29 | Infineon Technologies Austria Ag | Halbleiterbauelement mit verbessertem Speicherladung zu Dioden-Softness Trade-off |
| EP2073271A1 (en) | 2007-12-19 | 2009-06-24 | ABB Technology AG | Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor |
| EP2086012A1 (en) | 2007-12-19 | 2009-08-05 | ABB Technology AG | Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor |
| EP2184781A1 (en) * | 2008-11-05 | 2010-05-12 | ABB Technology AG | Reverse-conducting semiconductor device |
-
2010
- 2010-02-19 DK DK10154064.9T patent/DK2249392T3/da active
- 2010-02-19 EP EP10154064.9A patent/EP2249392B1/en active Active
- 2010-04-29 CN CN201010175167.3A patent/CN101877352B/zh active Active
- 2010-04-29 US US12/770,451 patent/US8212283B2/en active Active
- 2010-04-30 JP JP2010104715A patent/JP5697891B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2249392A2 (en) | 2010-11-10 |
| EP2249392A3 (en) | 2011-08-03 |
| JP2010263215A (ja) | 2010-11-18 |
| EP2249392B1 (en) | 2020-05-20 |
| US20100276727A1 (en) | 2010-11-04 |
| JP5697891B2 (ja) | 2015-04-08 |
| US8212283B2 (en) | 2012-07-03 |
| CN101877352B (zh) | 2015-09-09 |
| CN101877352A (zh) | 2010-11-03 |
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