CA1033468A - Combinaison d'un transistor bipolaire et d'un mosfet - Google Patents

Combinaison d'un transistor bipolaire et d'un mosfet

Info

Publication number
CA1033468A
CA1033468A CA216,005A CA216005A CA1033468A CA 1033468 A CA1033468 A CA 1033468A CA 216005 A CA216005 A CA 216005A CA 1033468 A CA1033468 A CA 1033468A
Authority
CA
Canada
Prior art keywords
combination
field effect
mos field
transistor
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA216,005A
Other languages
English (en)
Other versions
CA216005S (en
Inventor
Karl-Ulrich Stein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1033468A publication Critical patent/CA1033468A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
CA216,005A 1973-12-20 1974-12-13 Combinaison d'un transistor bipolaire et d'un mosfet Expired CA1033468A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2363577A DE2363577A1 (de) 1973-12-20 1973-12-20 Kombination aus einem bipolaren transistor und einem mos-feldeffekttransistor

Publications (1)

Publication Number Publication Date
CA1033468A true CA1033468A (fr) 1978-06-20

Family

ID=5901421

Family Applications (1)

Application Number Title Priority Date Filing Date
CA216,005A Expired CA1033468A (fr) 1973-12-20 1974-12-13 Combinaison d'un transistor bipolaire et d'un mosfet

Country Status (11)

Country Link
JP (1) JPS5094887A (fr)
AT (1) AT340481B (fr)
BE (1) BE823686R (fr)
CA (1) CA1033468A (fr)
CH (1) CH586959A5 (fr)
DE (1) DE2363577A1 (fr)
FR (1) FR2255710B2 (fr)
GB (1) GB1481184A (fr)
IT (1) IT1046735B (fr)
NL (1) NL7416703A (fr)
SE (1) SE404853B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0118336B1 (fr) * 1983-02-03 1988-04-20 Fairchild Semiconductor Corporation Transistor de puissance de type MOS/bipolaire à haute tension
DE3620686C2 (de) * 1986-06-20 1999-07-22 Daimler Chrysler Ag Strukturierter Halbleiterkörper
US4857766A (en) * 1987-10-30 1989-08-15 International Business Machine Corporation BiMos input circuit
WO2009019866A1 (fr) * 2007-08-07 2009-02-12 Kaori Takakubo Dispositif à semi-conducteurs et son procédé de commande

Also Published As

Publication number Publication date
NL7416703A (nl) 1975-06-24
CH586959A5 (fr) 1977-04-15
IT1046735B (it) 1980-07-31
JPS5094887A (fr) 1975-07-28
FR2255710B2 (fr) 1979-02-23
GB1481184A (en) 1977-07-27
SE7416017L (fr) 1975-06-23
ATA917974A (de) 1977-04-15
SE404853B (sv) 1978-10-30
BE823686R (fr) 1975-04-16
DE2363577A1 (de) 1975-06-26
AT340481B (de) 1977-12-12
FR2255710A2 (fr) 1975-07-18

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