CA1034263A - Dispositif a semiconducteur au silicium avec electrodes sans contrainte - Google Patents

Dispositif a semiconducteur au silicium avec electrodes sans contrainte

Info

Publication number
CA1034263A
CA1034263A CA231,735A CA231735A CA1034263A CA 1034263 A CA1034263 A CA 1034263A CA 231735 A CA231735 A CA 231735A CA 1034263 A CA1034263 A CA 1034263A
Authority
CA
Canada
Prior art keywords
stress
semiconductor device
silicon semiconductor
free electrodes
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA231,735A
Other languages
English (en)
Other versions
CA231735S (en
Inventor
Prosenjit Rai-Choudhury
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA1034263A publication Critical patent/CA1034263A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • H10W70/26—Semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
CA231,735A 1974-08-08 1975-07-18 Dispositif a semiconducteur au silicium avec electrodes sans contrainte Expired CA1034263A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US495755A US3925808A (en) 1974-08-08 1974-08-08 Silicon semiconductor device with stress-free electrodes

Publications (1)

Publication Number Publication Date
CA1034263A true CA1034263A (fr) 1978-07-04

Family

ID=23969873

Family Applications (1)

Application Number Title Priority Date Filing Date
CA231,735A Expired CA1034263A (fr) 1974-08-08 1975-07-18 Dispositif a semiconducteur au silicium avec electrodes sans contrainte

Country Status (7)

Country Link
US (1) US3925808A (fr)
JP (1) JPS552894B2 (fr)
CA (1) CA1034263A (fr)
DE (1) DE2534938A1 (fr)
FR (1) FR2281648A1 (fr)
GB (1) GB1515748A (fr)
SE (1) SE7508613L (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4402905A (en) * 1982-03-05 1983-09-06 Westinghouse Electric Corp. Production of a polycrystalline silicon aluminum alloy by a hot pressing technique
DE3323196A1 (de) * 1983-06-28 1985-01-03 Standard Elektrik Lorenz Ag, 7000 Stuttgart Loetbare haftende schicht
FR2550886B1 (fr) * 1983-08-17 1986-10-24 Radiotechnique Compelec Procede de realisation de transistors de puissance incluant des moyens de protection contre les surcharges et dispositifs ainsi obtenus
IT1213144B (it) * 1984-02-23 1989-12-14 Ates Componenti Elettron Processo per la saldatura di piastrine di materiale semiconduttore ad un supporto metallico nell'assemblaggio automatico di dispositivi a semiconduttore.
WO1987005746A1 (fr) * 1986-03-19 1987-09-24 Analog Devices, Incorporated Puce et tranche doublees avec de l'aluminium
US4866505A (en) * 1986-03-19 1989-09-12 Analog Devices, Inc. Aluminum-backed wafer and chip
US4905075A (en) * 1986-05-05 1990-02-27 General Electric Company Hermetic semiconductor enclosure
US4745455A (en) * 1986-05-16 1988-05-17 General Electric Company Silicon packages for power semiconductor devices
DE3823348A1 (de) * 1988-07-09 1990-02-08 Semikron Elektronik Gmbh Hochleistungs-halbleiterbauelement
US5260604A (en) * 1988-09-27 1993-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with improved immunity to contact and conductor defects
JPH0357230A (ja) * 1989-07-25 1991-03-12 Mitsubishi Electric Corp 半導体基板と支持板とのロウ付け方法
US5693574A (en) * 1991-02-22 1997-12-02 Deutsche Aerospace Ag Process for the laminar joining of silicon semiconductor slices
DE4105592A1 (de) * 1991-02-22 1992-08-27 Messerschmitt Boelkow Blohm Verfahren zum flaechenhaften verbinden von siliziumhalbleiterscheiben
DE4206437A1 (de) * 1992-02-29 1993-09-16 Telefunken Microelectron Halbleiter-baugruppe
GB9204731D0 (en) * 1992-03-05 1992-04-15 Westinghouse Brake & Signal A solder joint
US5970324A (en) * 1994-03-09 1999-10-19 Driscoll; John Cuervo Methods of making dual gated power electronic switching devices
US6034408A (en) * 1998-05-14 2000-03-07 International Business Machines Corporation Solid state thermal switch
US6342442B1 (en) * 1998-11-20 2002-01-29 Agere Systems Guardian Corp. Kinetically controlled solder bonding
KR100499722B1 (ko) * 2000-02-29 2005-07-07 오므론 가부시키가이샤 칩형 반도체 소자
FR2842021B1 (fr) * 2002-07-05 2005-05-13 Commissariat Energie Atomique Dispositif electronique, notamment dispositif de puissance, a couche mince, et procede de fabrication de ce dispositif
DE102005061263B4 (de) * 2005-12-20 2007-10-11 Infineon Technologies Austria Ag Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3588632A (en) * 1968-11-12 1971-06-28 Josuke Nakata Structurally reinforced semiconductor device
US3664896A (en) * 1969-07-28 1972-05-23 David M Duncan Deposited silicon diffusion sources

Also Published As

Publication number Publication date
GB1515748A (en) 1978-06-28
US3925808A (en) 1975-12-09
JPS552894B2 (fr) 1980-01-22
DE2534938A1 (de) 1976-02-19
FR2281648A1 (fr) 1976-03-05
JPS5141958A (fr) 1976-04-08
SE7508613L (sv) 1976-02-09

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