CA1048660A - Semiconductor on insulating substrate resistors and method of making the same - Google Patents

Semiconductor on insulating substrate resistors and method of making the same

Info

Publication number
CA1048660A
CA1048660A CA74215309A CA215309A CA1048660A CA 1048660 A CA1048660 A CA 1048660A CA 74215309 A CA74215309 A CA 74215309A CA 215309 A CA215309 A CA 215309A CA 1048660 A CA1048660 A CA 1048660A
Authority
CA
Canada
Prior art keywords
layer
region
ions
ion
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA74215309A
Other languages
English (en)
French (fr)
Other versions
CA215309S (en
Inventor
Karl Goser
Jeno Tihanyi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1048660A publication Critical patent/CA1048660A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CA74215309A 1973-12-06 1974-12-05 Semiconductor on insulating substrate resistors and method of making the same Expired CA1048660A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2360962A DE2360962A1 (de) 1973-12-06 1973-12-06 Hochohmiger widerstand in einer duennen einkristallinen siliziumschicht

Publications (1)

Publication Number Publication Date
CA1048660A true CA1048660A (en) 1979-02-13

Family

ID=5900134

Family Applications (1)

Application Number Title Priority Date Filing Date
CA74215309A Expired CA1048660A (en) 1973-12-06 1974-12-05 Semiconductor on insulating substrate resistors and method of making the same

Country Status (11)

Country Link
JP (1) JPS5091291A (de)
AT (1) AT342150B (de)
BE (1) BE823055A (de)
CA (1) CA1048660A (de)
CH (1) CH580328A5 (de)
DE (1) DE2360962A1 (de)
FR (1) FR2254095A1 (de)
GB (1) GB1474924A (de)
IT (1) IT1026738B (de)
NL (1) NL7415420A (de)
SE (1) SE396498B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD150415A3 (de) * 1978-01-03 1981-09-02 Guenter Weise Spannungsabhaengiger widerstand
FR2430653A1 (fr) 1978-07-04 1980-02-01 Thomson Csf Resistance au silicium a tres faible coefficient de temperature

Also Published As

Publication number Publication date
FR2254095A1 (de) 1975-07-04
SE396498B (sv) 1977-09-19
DE2360962A1 (de) 1975-06-12
AT342150B (de) 1978-03-10
SE7415254L (de) 1975-06-09
IT1026738B (it) 1978-10-20
GB1474924A (en) 1977-05-25
NL7415420A (nl) 1975-06-10
BE823055A (fr) 1975-04-01
JPS5091291A (de) 1975-07-21
CH580328A5 (de) 1976-09-30
ATA912874A (de) 1977-07-15

Similar Documents

Publication Publication Date Title
US5861657A (en) Graded concentration epitaxial substrate for semiconductor device having resurf diffusion
US3971059A (en) Complementary bipolar transistors having collector diffused isolation
US4079402A (en) Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
US5622880A (en) Method of making a low power, high performance junction transistor
US3955269A (en) Fabricating high performance integrated bipolar and complementary field effect transistors
US6262439B1 (en) Silicon carbide semiconductor device
US4583106A (en) Fabrication methods for high performance lateral bipolar transistors
US3796929A (en) Junction isolated integrated circuit resistor with crystal damage near isolation junction
US3997908A (en) Schottky gate field effect transistor
CA1059241A (en) Method of manufacturing a semiconductor device employing silicon ion implantation into silicon compound layer
US12224320B2 (en) Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
KR100722012B1 (ko) 반도체 디바이스
US3943555A (en) SOS Bipolar transistor
US3814992A (en) High performance fet
US4419681A (en) Zener diode
US3602781A (en) Integrated semiconductor circuit comprising only low temperature processed elements
GB2588663A (en) Semiconductor device and method of manufacturing thereof
CA1048660A (en) Semiconductor on insulating substrate resistors and method of making the same
US12550397B2 (en) Silicon carbide vertical conduction MOSFET device and manufacturing process thereof
US3901735A (en) Integrated circuit device and method utilizing ion implanted and up diffusion for isolated region
US5089427A (en) Semiconductor device and method
US4496963A (en) Semiconductor device with an ion implanted stabilization layer
KR100956241B1 (ko) 공핍가능한 콜렉터 컬럼을 가진 바이폴라 방법 및 구조
EP0064614B1 (de) Emitterstruktur für Halbleiteranordnungen
US5143859A (en) Method of manufacturing a static induction type switching device