CA1050666A - Methode de fabrication de transistors - Google Patents

Methode de fabrication de transistors

Info

Publication number: CA1050666A
Authority: CA; Canada
Prior art keywords: mask; metal layer; metal; layer; edge
Prior art date: 1976-03-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA249,332A

Other languages

English (en)

Inventor

George E. Smith

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

AT&T Corp

Original Assignee

Western Electric Co Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-03-31

Filing date

1976-03-31

Publication date

1979-03-13

1976-03-31 Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc

1976-03-31 Priority to CA249,332A priority Critical patent/CA1050666A/fr

1979-03-13 Application granted granted Critical

1979-03-13 Publication of CA1050666A publication Critical patent/CA1050666A/fr

Status Expired legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims abstract description 31
229910052751 metal Inorganic materials 0.000 claims abstract description 72
239000002184 metal Substances 0.000 claims abstract description 72
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
235000012239 silicon dioxide Nutrition 0.000 claims abstract description 28
239000000377 silicon dioxide Substances 0.000 claims abstract description 28
238000000151 deposition Methods 0.000 claims abstract description 8
229910044991 metal oxide Inorganic materials 0.000 claims abstract description 8
150000004706 metal oxides Chemical class 0.000 claims abstract description 8
238000005530 etching Methods 0.000 claims abstract description 6
230000001590 oxidative effect Effects 0.000 claims abstract description 6
229910052681 coesite Inorganic materials 0.000 claims abstract description 4
229910052906 cristobalite Inorganic materials 0.000 claims abstract description 4
229910052682 stishovite Inorganic materials 0.000 claims abstract description 4
229910052905 tridymite Inorganic materials 0.000 claims abstract description 4
239000012535 impurity Substances 0.000 claims description 23
238000005468 ion implantation Methods 0.000 claims description 17
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
229910052710 silicon Inorganic materials 0.000 claims description 14
239000010703 silicon Substances 0.000 claims description 14
229910052782 aluminium Inorganic materials 0.000 claims description 11
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
239000004065 semiconductor Substances 0.000 claims description 9
239000000758 substrate Substances 0.000 claims description 9
239000000463 material Substances 0.000 claims description 8
229910052581 Si3N4 Inorganic materials 0.000 claims description 5
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
230000005669 field effect Effects 0.000 claims description 3
239000007943 implant Substances 0.000 claims description 3
238000002513 implantation Methods 0.000 claims description 3
230000003647 oxidation Effects 0.000 claims description 3
238000007254 oxidation reaction Methods 0.000 claims description 3
238000007747 plating Methods 0.000 claims description 3
230000015572 biosynthetic process Effects 0.000 claims 1
238000009713 electroplating Methods 0.000 abstract description 5
229960001866 silicon dioxide Drugs 0.000 description 19
238000004519 manufacturing process Methods 0.000 description 5
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
238000002048 anodisation reaction Methods 0.000 description 4
238000009792 diffusion process Methods 0.000 description 4
239000004020 conductor Substances 0.000 description 3
150000002500 ions Chemical class 0.000 description 3
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 2
239000000969 carrier Substances 0.000 description 2
229910052759 nickel Inorganic materials 0.000 description 2
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
229920005591 polysilicon Polymers 0.000 description 2
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
229910052721 tungsten Inorganic materials 0.000 description 2
239000010937 tungsten Substances 0.000 description 2
239000007836 KH2PO4 Substances 0.000 description 1
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
238000003491 array Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000006073 displacement reaction Methods 0.000 description 1
238000007772 electroless plating Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000004927 fusion Effects 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
235000019796 monopotassium phosphate Nutrition 0.000 description 1
238000012856 packing Methods 0.000 description 1
235000011007 phosphoric acid Nutrition 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 description 1
-1 potassium ferricyanide Chemical compound 0.000 description 1
238000005245 sintering Methods 0.000 description 1
239000002904 solvent Substances 0.000 description 1

Landscapes

Insulated Gate Type Field-Effect Transistor (AREA)

CA249,332A 1976-03-31 1976-03-31 Methode de fabrication de transistors Expired CA1050666A (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA249,332A CA1050666A (fr)	1976-03-31	1976-03-31	Methode de fabrication de transistors

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CA249,332A CA1050666A (fr)	1976-03-31	1976-03-31	Methode de fabrication de transistors

Publications (1)

Publication Number	Publication Date
CA1050666A true CA1050666A (fr)	1979-03-13

Family

ID=4105606

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA249,332A Expired CA1050666A (fr)	1976-03-31	1976-03-31	Methode de fabrication de transistors

Country Status (1)

Country	Link
CA (1)	CA1050666A (fr)

1976
- 1976-03-31 CA CA249,332A patent/CA1050666A/fr not_active Expired

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