CA1059647A - Method of preparing dielectric insulator separated substrate for semiconductor integrated circuits - Google Patents

Method of preparing dielectric insulator separated substrate for semiconductor integrated circuits

Info

Publication number
CA1059647A
CA1059647A CA251,240A CA251240A CA1059647A CA 1059647 A CA1059647 A CA 1059647A CA 251240 A CA251240 A CA 251240A CA 1059647 A CA1059647 A CA 1059647A
Authority
CA
Canada
Prior art keywords
monocrystalline
dielectric
polycrystalline
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA251,240A
Other languages
English (en)
French (fr)
Inventor
Akio Mimura
Takaya Suzuki
Seturo Yagiyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of CA1059647A publication Critical patent/CA1059647A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Element Separation (AREA)
CA251,240A 1975-05-12 1976-04-27 Method of preparing dielectric insulator separated substrate for semiconductor integrated circuits Expired CA1059647A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50054585A JPS51131280A (en) 1975-05-12 1975-05-12 Dielectric insulation separation base manufacturing process

Publications (1)

Publication Number Publication Date
CA1059647A true CA1059647A (en) 1979-07-31

Family

ID=12974774

Family Applications (1)

Application Number Title Priority Date Filing Date
CA251,240A Expired CA1059647A (en) 1975-05-12 1976-04-27 Method of preparing dielectric insulator separated substrate for semiconductor integrated circuits

Country Status (3)

Country Link
JP (1) JPS51131280A (2)
CA (1) CA1059647A (2)
DE (1) DE2620814C3 (2)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138229A (en) * 1979-04-13 1980-10-28 Hitachi Ltd Manufacture of dielectric material for insulation- separation substrate
JPS57102044A (en) * 1980-12-17 1982-06-24 Hitachi Ltd Insulating isolation substrate
JPS61166039A (ja) * 1985-09-20 1986-07-26 Hitachi Ltd 誘電体絶縁分離基板

Also Published As

Publication number Publication date
JPS5411231B2 (2) 1979-05-12
JPS51131280A (en) 1976-11-15
DE2620814A1 (de) 1976-11-25
DE2620814B2 (de) 1978-04-06
DE2620814C3 (de) 1978-11-30

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