CA1079865A - Circuit integre a semiconducteur compose de transistors a effet de champ a porte isolee - Google Patents

Circuit integre a semiconducteur compose de transistors a effet de champ a porte isolee

Info

Publication number: CA1079865A
Authority: CA; Canada
Prior art keywords: transistors; integrated circuit; circuit device; semiconductor integrated; matrix
Prior art date: 1975-09-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA327,604A

Other languages

English (en)

Inventor

Hiroto Kawagoe

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-09-04

Filing date

1979-05-15

Publication date

1980-06-17

1975-09-04 Priority claimed from JP50107350A external-priority patent/JPS5851427B2/ja

1979-05-15 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1979-05-15 Priority to CA327,604A priority Critical patent/CA1079865A/fr

1980-06-17 Application granted granted Critical

1980-06-17 Publication of CA1079865A publication Critical patent/CA1079865A/fr

Status Expired legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 21
230000005669 field effect Effects 0.000 title claims abstract description 19
239000011159 matrix material Substances 0.000 claims abstract description 30
239000012535 impurity Substances 0.000 claims abstract description 4
238000005065 mining Methods 0.000 claims 1
239000000758 substrate Substances 0.000 abstract description 16
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
238000000034 method Methods 0.000 abstract description 9
229910052710 silicon Inorganic materials 0.000 abstract description 9
239000010703 silicon Substances 0.000 abstract description 9
238000009792 diffusion process Methods 0.000 abstract description 3
150000002500 ions Chemical class 0.000 abstract description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
238000004519 manufacturing process Methods 0.000 description 6
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 5
238000010586 diagram Methods 0.000 description 5
229910052796 boron Inorganic materials 0.000 description 4
239000013078 crystal Substances 0.000 description 4
239000005360 phosphosilicate glass Substances 0.000 description 4
-1 boron ions Chemical class 0.000 description 3
230000006870 function Effects 0.000 description 3
229920002120 photoresistant polymer Polymers 0.000 description 3
235000012239 silicon dioxide Nutrition 0.000 description 3
239000000377 silicon dioxide Substances 0.000 description 3
108010075750 P-Type Calcium Channels Proteins 0.000 description 2
239000000463 material Substances 0.000 description 2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
108091006146 Channels Proteins 0.000 description 1
101710146479 Implantin Proteins 0.000 description 1
101150007148 THI5 gene Proteins 0.000 description 1
238000010420 art technique Methods 0.000 description 1
238000010276 construction Methods 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
230000003292 diminished effect Effects 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
238000002513 implantation Methods 0.000 description 1
230000010354 integration Effects 0.000 description 1
238000011835 investigation Methods 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
238000005259 measurement Methods 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
230000003068 static effect Effects 0.000 description 1

Landscapes

Semiconductor Memories (AREA)
Read Only Memory (AREA)

CA327,604A 1975-09-04 1979-05-15 Circuit integre a semiconducteur compose de transistors a effet de champ a porte isolee Expired CA1079865A (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA327,604A CA1079865A (fr)	1975-09-04	1979-05-15	Circuit integre a semiconducteur compose de transistors a effet de champ a porte isolee

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP50107350A JPS5851427B2 (ja)	1975-09-04	1975-09-04	絶縁ゲ−ト型リ−ド・オンリ−・メモリの製造方法
CA240,274A CA1070436A (fr)	1975-09-04	1975-11-24	Circuit integre a semiconducteur compose de transistors a effet de champ a porte isolee
CA327,604A CA1079865A (fr)	1975-09-04	1979-05-15	Circuit integre a semiconducteur compose de transistors a effet de champ a porte isolee

Publications (1)

Publication Number	Publication Date
CA1079865A true CA1079865A (fr)	1980-06-17

Family

ID=27164213

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA327,604A Expired CA1079865A (fr)	1975-09-04	1979-05-15	Circuit integre a semiconducteur compose de transistors a effet de champ a porte isolee

Country Status (1)

Country	Link
CA (1)	CA1079865A (fr)

1979
- 1979-05-15 CA CA327,604A patent/CA1079865A/fr not_active Expired

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Legal Events

Date	Code	Title	Description
1997-06-17	MKEX	Expiry