CA1088213A - Dispositif semiconducteur a protection integree - Google Patents

Dispositif semiconducteur a protection integree

Info

Publication number: CA1088213A
Authority: CA; Canada
Prior art keywords: region; type conductivity; conductivity layer; etched; breakdown voltage
Prior art date: 1977-04-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA276,625A

Other languages

English (en)

Inventor

Victor A. K. Temple

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

General Electric Co

Original Assignee

General Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-04-21

Filing date

1977-04-21

Publication date

1980-10-21

1977-04-21 Application filed by General Electric Co filed Critical General Electric Co

1977-04-21 Priority to CA276,625A priority Critical patent/CA1088213A/fr

1980-10-21 Application granted granted Critical

1980-10-21 Publication of CA1088213A publication Critical patent/CA1088213A/fr

Status Expired legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract description 21
230000015556 catabolic process Effects 0.000 claims abstract description 43
230000006378 damage Effects 0.000 claims description 4
230000003667 anti-reflective effect Effects 0.000 claims description 3
230000001960 triggered effect Effects 0.000 claims description 2
230000000903 blocking effect Effects 0.000 abstract 1
238000000034 method Methods 0.000 description 7
239000012535 impurity Substances 0.000 description 5
239000000463 material Substances 0.000 description 4
230000001066 destructive effect Effects 0.000 description 3
230000005684 electric field Effects 0.000 description 3
238000005530 etching Methods 0.000 description 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
230000008901 benefit Effects 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
230000007423 decrease Effects 0.000 description 2
238000001465 metallisation Methods 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000002161 passivation Methods 0.000 description 2
230000005855 radiation Effects 0.000 description 2
230000004044 response Effects 0.000 description 2
230000035945 sensitivity Effects 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
241001669573 Galeorhinus galeus Species 0.000 description 1
206010042618 Surgical procedure repeated Diseases 0.000 description 1
238000004364 calculation method Methods 0.000 description 1
239000002800 charge carrier Substances 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
239000003989 dielectric material Substances 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000005553 drilling Methods 0.000 description 1
230000009977 dual effect Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000010304 firing Methods 0.000 description 1
238000007429 general method Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
230000008520 organization Effects 0.000 description 1
230000008569 process Effects 0.000 description 1
238000012545 processing Methods 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
238000005488 sandblasting Methods 0.000 description 1

Landscapes

Thyristors (AREA)

CA276,625A 1977-04-21 1977-04-21 Dispositif semiconducteur a protection integree Expired CA1088213A (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA276,625A CA1088213A (fr)	1977-04-21	1977-04-21	Dispositif semiconducteur a protection integree

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CA276,625A CA1088213A (fr)	1977-04-21	1977-04-21	Dispositif semiconducteur a protection integree

Publications (1)

Publication Number	Publication Date
CA1088213A true CA1088213A (fr)	1980-10-21

Family

ID=4108441

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA276,625A Expired CA1088213A (fr)	1977-04-21	1977-04-21	Dispositif semiconducteur a protection integree

Country Status (1)

Country	Link
CA (1)	CA1088213A (fr)

1977
- 1977-04-21 CA CA276,625A patent/CA1088213A/fr not_active Expired

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Legal Events

Date	Code	Title	Description
1997-10-21	MKEX	Expiry