CA1108772A - Methode pour l'obtention de sections de silicone isolees - Google Patents

Methode pour l'obtention de sections de silicone isolees

Info

Publication number: CA1108772A
Authority: CA; Canada
Prior art keywords: silicon; openings; layer; groove; regions
Prior art date: 1977-08-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA355,850A

Other languages

English (en)

Inventor

James A. Bondur

H. Bernhard Pogge

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-08-15

Filing date

1980-07-09

Publication date

1981-09-08

1977-08-15 Priority claimed from US05/824,361 external-priority patent/US4104086A/en

1980-07-09 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1980-07-09 Priority to CA355,850A priority Critical patent/CA1108772A/fr

1981-09-08 Application granted granted Critical

1981-09-08 Publication of CA1108772A publication Critical patent/CA1108772A/fr

Status Expired legal-status Critical Current

Links

239000010703 silicon Substances 0.000 title claims abstract description 62
229910052710 silicon Inorganic materials 0.000 title claims abstract description 60
238000000034 method Methods 0.000 title claims abstract description 49
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
238000011049 filling Methods 0.000 claims abstract description 21
239000003989 dielectric material Substances 0.000 claims abstract description 12
230000001590 oxidative effect Effects 0.000 claims abstract description 4
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 19
239000000460 chlorine Substances 0.000 claims description 19
229910052801 chlorine Inorganic materials 0.000 claims description 19
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
241000894007 species Species 0.000 claims description 17
238000005530 etching Methods 0.000 claims description 15
229910052786 argon Inorganic materials 0.000 claims description 9
239000007789 gas Substances 0.000 claims description 5
KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical group ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 2
239000007943 implant Substances 0.000 claims description 2
238000010438 heat treatment Methods 0.000 claims 1
230000015572 biosynthetic process Effects 0.000 abstract description 18
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 91
239000000377 silicon dioxide Substances 0.000 description 45
235000012239 silicon dioxide Nutrition 0.000 description 45
239000010410 layer Substances 0.000 description 27
238000002955 isolation Methods 0.000 description 25
238000005755 formation reaction Methods 0.000 description 17
238000001020 plasma etching Methods 0.000 description 11
239000000126 substance Substances 0.000 description 10
239000000758 substrate Substances 0.000 description 10
150000002500 ions Chemical class 0.000 description 9
239000000463 material Substances 0.000 description 9
230000000694 effects Effects 0.000 description 7
238000003486 chemical etching Methods 0.000 description 6
238000009792 diffusion process Methods 0.000 description 6
230000003647 oxidation Effects 0.000 description 6
238000007254 oxidation reaction Methods 0.000 description 6
238000000151 deposition Methods 0.000 description 5
230000008021 deposition Effects 0.000 description 5
229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
230000008901 benefit Effects 0.000 description 4
238000005229 chemical vapour deposition Methods 0.000 description 4
229910052581 Si3N4 Inorganic materials 0.000 description 3
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
239000010408 film Substances 0.000 description 3
238000002513 implantation Methods 0.000 description 3
238000001459 lithography Methods 0.000 description 3
230000000873 masking effect Effects 0.000 description 3
229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
238000000992 sputter etching Methods 0.000 description 3
241000293849 Cordylanthus Species 0.000 description 2
208000012868 Overgrowth Diseases 0.000 description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
229910052681 coesite Inorganic materials 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
229910052906 cristobalite Inorganic materials 0.000 description 2
239000002019 doping agent Substances 0.000 description 2
238000002474 experimental method Methods 0.000 description 2
238000005468 ion implantation Methods 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
239000000203 mixture Substances 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
229910052682 stishovite Inorganic materials 0.000 description 2
229910052905 tridymite Inorganic materials 0.000 description 2
ZVNPWFOVUDMGRP-UHFFFAOYSA-N 4-methylaminophenol sulfate Chemical compound OS(O)(=O)=O.CNC1=CC=C(O)C=C1.CNC1=CC=C(O)C=C1 ZVNPWFOVUDMGRP-UHFFFAOYSA-N 0.000 description 1
ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
239000004215 Carbon black (E152) Substances 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
241001296096 Probles Species 0.000 description 1
238000000137 annealing Methods 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
238000013459 approach Methods 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
229910052794 bromium Inorganic materials 0.000 description 1
150000001768 cations Chemical class 0.000 description 1
239000002131 composite material Substances 0.000 description 1
239000004020 conductor Substances 0.000 description 1
239000013256 coordination polymer Substances 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
230000007423 decrease Effects 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
238000005429 filling process Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
229930195733 hydrocarbon Natural products 0.000 description 1
150000002430 hydrocarbons Chemical class 0.000 description 1
239000012535 impurity Substances 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
239000011630 iodine Substances 0.000 description 1
229910052740 iodine Inorganic materials 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012544 monitoring process Methods 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
239000012788 optical film Substances 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
238000012856 packing Methods 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
229920000136 polysorbate Polymers 0.000 description 1
239000010909 process residue Substances 0.000 description 1
238000012545 processing Methods 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
239000011241 protective layer Substances 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
XUIMIQQOPSSXEZ-IGMARMGPSA-N silicon-28 atom Chemical compound [28Si] XUIMIQQOPSSXEZ-IGMARMGPSA-N 0.000 description 1
239000002210 silicon-based material Substances 0.000 description 1
239000007787 solid Substances 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Landscapes

Element Separation (AREA)
Drying Of Semiconductors (AREA)

CA355,850A 1977-08-15 1980-07-09 Methode pour l'obtention de sections de silicone isolees Expired CA1108772A (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA355,850A CA1108772A (fr)	1977-08-15	1980-07-09	Methode pour l'obtention de sections de silicone isolees

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
US05/824,361 US4104086A (en)	1977-08-15	1977-08-15	Method for forming isolated regions of silicon utilizing reactive ion etching
US824,361		1977-08-15
CA305,231A CA1097826A (fr)	1977-08-15	1978-06-12	Methode de formation de regions isolees dans le silicium
CA355,850A CA1108772A (fr)	1977-08-15	1980-07-09	Methode pour l'obtention de sections de silicone isolees

Publications (1)

Publication Number	Publication Date
CA1108772A true CA1108772A (fr)	1981-09-08

Family

ID=27165700

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA355,850A Expired CA1108772A (fr)	1977-08-15	1980-07-09	Methode pour l'obtention de sections de silicone isolees

Country Status (1)

Country	Link
CA (1)	CA1108772A (fr)

1980
- 1980-07-09 CA CA355,850A patent/CA1108772A/fr not_active Expired

Legal Events

Date	Code	Title	Description
1998-09-08	MKEX	Expiry

Publication	Publication Date	Title
CA1097826A (fr)	1981-03-17	Methode de formation de regions isolees dans le silicium
US4307180A (en)	1981-12-22	Process of forming recessed dielectric regions in a monocrystalline silicon substrate
US4274909A (en)	1981-06-23	Method for forming ultra fine deep dielectric isolation
EP0072966B1 (fr)	1989-03-08	Structure de circuit intégré et procédé pour la formation d'une structure d'isolation encastrée pour circuits intégrés
EP0107902B1 (fr)	1989-04-19	Procédé pour la fabrication de régions d'isolation dans des dispositifs semi-conducteurs
US4502913A (en)	1985-03-05	Total dielectric isolation for integrated circuits
US5384280A (en)	1995-01-24	Method of manufacturing a semiconductor device isolated by a trench
KR960016502B1 (ko)	1996-12-12	집적 회로 분리 방법
EP0073370B1 (fr)	1989-03-08	Structure de circuit intégré et procédé pour la formation d'une structure à isolation encastrée pour circuits intégrés
EP0004298B1 (fr)	1982-05-12	Méthode de fabrication d'isolation et de contact vers des couches enterrées de structures semiconductrices
US4755477A (en)	1988-07-05	Overhang isolation technology
US4255207A (en)	1981-03-10	Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation
JP3156998B2 (ja)	2001-04-16	半導体デバイスの製造方法
KR900000067B1 (ko)	1990-01-19	반도체 장치의 유전체 매입형 소자 분리홈의 형성방법
US3966514A (en)	1976-06-29	Method for forming dielectric isolation combining dielectric deposition and thermal oxidation
US4843025A (en)	1989-06-27	Method of fabricating trench cell capacitors on a semocondcutor substrate
US4333794A (en)	1982-06-08	Omission of thick Si3 N4 layers in ISA schemes
US4661832A (en)	1987-04-28	Total dielectric isolation for integrated circuits
US4389294A (en)	1983-06-21	Method for avoiding residue on a vertical walled mesa
US5229317A (en)	1993-07-20	Method for preventing out-diffusion of phosphorous and boron in a bpsg-buried trench
US5849625A (en)	1998-12-15	Planar field oxide isolation process for semiconductor integrated circuit devices using liquid phase deposition
US4542579A (en)	1985-09-24	Method for forming aluminum oxide dielectric isolation in integrated circuits
CA1108772A (fr)	1981-09-08	Methode pour l'obtention de sections de silicone isolees
USRE34400E (en)	1993-10-05	Method for fabricating isolation region in semiconductor devices
US4670769A (en)	1987-06-02	Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation