CA1118892A - Dispositif a semiconducteur utilisant des cellules de memoire a regions murales de stockage de charge - Google Patents

Dispositif a semiconducteur utilisant des cellules de memoire a regions murales de stockage de charge

Info

Publication number: CA1118892A
Authority: CA; Canada
Prior art keywords: recess; forming; layer; substrate; memory device
Prior art date: 1977-12-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000308013A

Other languages

English (en)

Inventor

John R. Edwards

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

American Microsystems Holding Corp

Original Assignee

American Microsystems Holding Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-12-27

Filing date

1978-07-24

Publication date

1982-02-23

1978-07-24 Application filed by American Microsystems Holding Corp filed Critical American Microsystems Holding Corp

1982-02-23 Application granted granted Critical

1982-02-23 Publication of CA1118892A publication Critical patent/CA1118892A/fr

Status Expired legal-status Critical Current

Links

238000003860 storage Methods 0.000 title claims abstract description 29
239000004065 semiconductor Substances 0.000 title claims abstract description 17
239000000463 material Substances 0.000 claims abstract description 39
239000000758 substrate Substances 0.000 claims abstract description 36
230000004888 barrier function Effects 0.000 claims abstract description 35
238000009792 diffusion process Methods 0.000 claims abstract description 22
239000004020 conductor Substances 0.000 claims abstract description 15
238000000034 method Methods 0.000 claims description 15
229910052751 metal Inorganic materials 0.000 claims description 5
239000002184 metal Substances 0.000 claims description 5
239000002210 silicon-based material Substances 0.000 claims description 5
229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
238000005530 etching Methods 0.000 claims description 4
238000004519 manufacturing process Methods 0.000 claims description 4
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
239000002019 doping agent Substances 0.000 claims description 2
230000000694 effects Effects 0.000 claims description 2
238000005468 ion implantation Methods 0.000 claims description 2
239000013078 crystal Substances 0.000 claims 2
206010040007 Sense of oppression Diseases 0.000 abstract 1
210000004027 cell Anatomy 0.000 description 37
238000009740 moulding (composite fabrication) Methods 0.000 description 11
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
230000005669 field effect Effects 0.000 description 4
150000002500 ions Chemical class 0.000 description 4
230000006870 function Effects 0.000 description 3
230000003647 oxidation Effects 0.000 description 3
238000007254 oxidation reaction Methods 0.000 description 3
230000008569 process Effects 0.000 description 3
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
229910052787 antimony Inorganic materials 0.000 description 2
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
238000010276 construction Methods 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
230000014759 maintenance of location Effects 0.000 description 2
239000002674 ointment Substances 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
230000003334 potential effect Effects 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
239000000377 silicon dioxide Substances 0.000 description 2
235000012239 silicon dioxide Nutrition 0.000 description 2
ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
239000005630 Diquat Substances 0.000 description 1
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
239000002800 charge carrier Substances 0.000 description 1
238000007667 floating Methods 0.000 description 1
VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
230000006872 improvement Effects 0.000 description 1
239000012212 insulator Substances 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
238000002161 passivation Methods 0.000 description 1
230000000149 penetrating effect Effects 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
230000003389 potentiating effect Effects 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
229910000077 silane Inorganic materials 0.000 description 1
210000000352 storage cell Anatomy 0.000 description 1
KUAZQDVKQLNFPE-UHFFFAOYSA-N thiram Chemical compound CN(C)C(=S)SSC(=S)N(C)C KUAZQDVKQLNFPE-UHFFFAOYSA-N 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Semiconductor Memories (AREA)
Non-Volatile Memory (AREA)

CA000308013A 1977-12-27 1978-07-24 Dispositif a semiconducteur utilisant des cellules de memoire a regions murales de stockage de charge Expired CA1118892A (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US86453677A	1977-12-27	1977-12-27
US864,536		1977-12-27

Publications (1)

Publication Number	Publication Date
CA1118892A true CA1118892A (fr)	1982-02-23

Family

ID=25343489

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000308013A Expired CA1118892A (fr)	1977-12-27	1978-07-24	Dispositif a semiconducteur utilisant des cellules de memoire a regions murales de stockage de charge

Country Status (7)

Country	Link
JP (1)	JPS5492077A (fr)
CA (1)	CA1118892A (fr)
DE (1)	DE2842334A1 (fr)
FR (1)	FR2413789A1 (fr)
GB (1)	GB2011175B (fr)
IT (1)	IT7869937A0 (fr)
NL (1)	NL7808079A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2909820A1 (de) *	1979-03-13	1980-09-18	Siemens Ag	Halbleiterspeicher mit eintransistorzellen in v-mos-technologie
US4252579A (en) *	1979-05-07	1981-02-24	International Business Machines Corporation	Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition
US4335450A (en) *	1980-01-30	1982-06-15	International Business Machines Corporation	Non-destructive read out field effect transistor memory cell system
US4423490A (en) *	1980-10-27	1983-12-27	Burroughs Corporation	JFET Dynamic memory
JPS6135554A (ja) *	1984-07-28	1986-02-20	Nippon Telegr & Teleph Corp <Ntt>	読出し専用メモリ−およびその製造方法
US4997783A (en) *	1987-07-02	1991-03-05	Integrated Device Technology, Inc.	Static ram cell with trench pull-down transistors and buried-layer ground plate
US4987090A (en) *	1987-07-02	1991-01-22	Integrated Device Technology, Inc.	Static ram cell with trench pull-down transistors and buried-layer ground plate
US6963108B1 (en) *	2003-10-10	2005-11-08	Advanced Micro Devices, Inc.	Recessed channel

1978
- 1978-07-24 CA CA000308013A patent/CA1118892A/fr not_active Expired
- 1978-08-01 NL NL7808079A patent/NL7808079A/xx not_active Application Discontinuation
- 1978-08-08 GB GB7832604A patent/GB2011175B/en not_active Expired
- 1978-08-30 JP JP10618578A patent/JPS5492077A/ja active Pending
- 1978-09-28 DE DE19782842334 patent/DE2842334A1/de not_active Withdrawn
- 1978-10-11 FR FR7829050A patent/FR2413789A1/fr not_active Withdrawn
- 1978-12-22 IT IT7869937A patent/IT7869937A0/it unknown

Also Published As

Publication number	Publication date
DE2842334A1 (de)	1979-07-05
FR2413789A1 (fr)	1979-07-27
GB2011175B (en)	1982-02-10
JPS5492077A (en)	1979-07-20
GB2011175A (en)	1979-07-04
NL7808079A (nl)	1979-06-29
IT7869937A0 (it)	1978-12-22

Legal Events

Date	Code	Title	Description
1999-02-23	MKEX	Expiry

Publication	Publication Date	Title
US4003036A (en)	1977-01-11	Single IGFET memory cell with buried storage element
EP0135942B1 (fr)	1990-12-05	Mémoire semi-conductrice et son procédé de production
CA1248231A (fr)	1989-01-03	Memoire haute densite
EP0085988B1 (fr)	1988-01-27	Mémoire semi-conductrice et son procédé de fabrication
KR0135783B1 (ko)	1998-04-24	고성능 복합 필러 dRAM 셀 및 이의 형성 방법
KR100338462B1 (ko)	2002-11-22	자기증폭다이나믹mos트랜지스터메모리셀을포함하는장치제조방법
US4364074A (en)	1982-12-14	V-MOS Device with self-aligned multiple electrodes
US4208781A (en)	1980-06-24	Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4864375A (en)	1989-09-05	Dram cell and method
EP0014388A1 (fr)	1980-08-20	Dispositif semiconducteur à mémoire
EP0236089A2 (fr)	1987-09-09	Mémoire dynamique à accès aléatoire comprenant un condensateur dans un sillon
US5135879A (en)	1992-08-04	Method of fabricating a high density EPROM cell on a trench wall
US4467453A (en)	1984-08-21	Electrically programmable floating gate semiconductor memory device
KR890004470B1 (ko)	1989-11-04	독출전용 기억장치와 그 제조방법
JPS5840343B2 (ja)	1983-09-05	Ｍｏｓｆｅｔ・ｒａｍ素子の製造方法
WO1981003241A1 (fr)	1981-11-12	Circuits integres de silicium
US4514897A (en)	1985-05-07	Electrically programmable floating gate semiconductor memory device
US4369564A (en)	1983-01-25	VMOS Memory cell and method for making same
US4246593A (en)	1981-01-20	High density static memory cell with polysilicon resistors
CA1118892A (fr)	1982-02-23	Dispositif a semiconducteur utilisant des cellules de memoire a regions murales de stockage de charge
US5250458A (en)	1993-10-05	Method for manufacturing semiconductor memory device having stacked memory capacitors
EP0180026A2 (fr)	1986-05-07	Cellule DRAM et procédé
US5010379A (en)	1991-04-23	Semiconductor memory device with two storage nodes
USRE32090E (en)	1986-03-04	Silicon integrated circuits
KR890001190A (ko)	1989-03-18	반도체 기억소자 및 제조방법