CA1136775A - Methode de fabrication de resist cop utilise en lithographie a rayons x - Google Patents
Methode de fabrication de resist cop utilise en lithographie a rayons xInfo
- Publication number
- CA1136775A CA1136775A CA000383971A CA383971A CA1136775A CA 1136775 A CA1136775 A CA 1136775A CA 000383971 A CA000383971 A CA 000383971A CA 383971 A CA383971 A CA 383971A CA 1136775 A CA1136775 A CA 1136775A
- Authority
- CA
- Canada
- Prior art keywords
- resist
- developing
- tungsten
- ray
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000383971A CA1136775A (fr) | 1978-01-16 | 1981-08-14 | Methode de fabrication de resist cop utilise en lithographie a rayons x |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US869,541 | 1978-01-16 | ||
| US05/869,541 US4215192A (en) | 1978-01-16 | 1978-01-16 | X-ray lithography apparatus and method of use |
| CA000383971A CA1136775A (fr) | 1978-01-16 | 1981-08-14 | Methode de fabrication de resist cop utilise en lithographie a rayons x |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1136775A true CA1136775A (fr) | 1982-11-30 |
Family
ID=25669404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000383971A Expired CA1136775A (fr) | 1978-01-16 | 1981-08-14 | Methode de fabrication de resist cop utilise en lithographie a rayons x |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1136775A (fr) |
-
1981
- 1981-08-14 CA CA000383971A patent/CA1136775A/fr not_active Expired
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4215192A (en) | X-ray lithography apparatus and method of use | |
| US4184078A (en) | Pulsed X-ray lithography | |
| US8945310B2 (en) | Method and device for cleaning at least one optical component | |
| US4837794A (en) | Filter apparatus for use with an x-ray source | |
| US20250321506A1 (en) | Euv lithography apparatus and operating method for mitigating contamination | |
| TW201734559A (zh) | 具有對氫傳輸之障壁之極紫外線元件 | |
| US4477921A (en) | X-Ray lithography source tube | |
| EP0321147B1 (fr) | Masque photoélectronique et méthode de projection d'image photocathodique faisant usage d'un tel masque | |
| EP1896197B1 (fr) | Procede de nettoyage et de post-traitement de surfaces optiques dans un dispositif d'irradiation | |
| Malmqvist et al. | Droplet‐target laser‐plasma source for proximity x‐ray lithography | |
| US11740549B2 (en) | Extreme ultraviolet lithography method, extreme ultraviolet mask and formation method thereof | |
| US4342917A (en) | X-ray lithography apparatus and method of use | |
| US4453262A (en) | X-Ray lithography apparatus and method of use | |
| CA1136775A (fr) | Methode de fabrication de resist cop utilise en lithographie a rayons x | |
| US10285253B2 (en) | Discharge electrodes and light source device | |
| DE102019124781A1 (de) | Verfahren zum herstellen und behandeln einer fotomaske | |
| Turcu et al. | X-ray lithography using a KrF laser-plasma source at hν≈ 1 keV | |
| Randall et al. | Repair of x‐ray lithography masks using UV‐laser photodeposition | |
| CA1131806A (fr) | Appareil de lithographie a rayons x | |
| Bijkerk et al. | Laser plasma as x-ray source for lithographic imaging of submicron structures onto experimental x-ray resist | |
| Elton et al. | X‐ray damage to optical components using a laser‐plasma source | |
| Nagel | Plasma sources for x-ray lithography | |
| CN118836979B (zh) | 一种基于吸收谱线的多波长极紫外台式化光源 | |
| Heuberger et al. | Present status and problems of x-ray lithography | |
| JPH11126745A (ja) | X線縮小露光リソグラフ用光源装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry | ||
| MKEX | Expiry |
Effective date: 19991130 |