CA1137604A - Piles solaires en couches minces a jonctions homopolaires - Google Patents

Piles solaires en couches minces a jonctions homopolaires

Info

Publication number: CA1137604A
Authority: CA; Canada
Prior art keywords: layer; gaas; shallow; homojunction; solar cells
Prior art date: 1978-03-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000324090A

Other languages

English (en)

Inventor

Carl O. Bozler

Ralph L. Chapman

Robert W. Mcclelland

John C.C. Fan

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Massachusetts Institute of Technology

Original Assignee

Massachusetts Institute of Technology

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-03-22

Filing date

1979-03-22

Publication date

1982-12-14

1979-03-22 Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology

1982-07-27 Priority to CA000408201A priority Critical patent/CA1150807A/fr

1982-12-14 Application granted granted Critical

1982-12-14 Publication of CA1137604A publication Critical patent/CA1137604A/fr

Status Expired legal-status Critical Current

Links

229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 88
239000000758 substrate Substances 0.000 claims abstract description 44
238000000576 coating method Methods 0.000 claims abstract description 39
239000011248 coating agent Substances 0.000 claims abstract description 33
239000000463 material Substances 0.000 claims abstract description 29
239000004065 semiconductor Substances 0.000 claims abstract description 24
229910052732 germanium Inorganic materials 0.000 claims abstract description 13
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 13
229910052710 silicon Inorganic materials 0.000 claims abstract description 8
239000010703 silicon Substances 0.000 claims abstract description 8
238000002048 anodisation reaction Methods 0.000 abstract description 22
238000000034 method Methods 0.000 abstract description 19
238000004519 manufacturing process Methods 0.000 abstract description 10
230000006872 improvement Effects 0.000 abstract description 2
239000010410 layer Substances 0.000 description 145
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 80
239000010931 gold Substances 0.000 description 24
239000011135 tin Substances 0.000 description 22
239000000969 carrier Substances 0.000 description 16
229910052718 tin Inorganic materials 0.000 description 13
238000006243 chemical reaction Methods 0.000 description 12
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 11
229910052737 gold Inorganic materials 0.000 description 11
229910052751 metal Inorganic materials 0.000 description 11
239000002184 metal Substances 0.000 description 11
235000012431 wafers Nutrition 0.000 description 11
DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 9
230000007423 decrease Effects 0.000 description 9
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
229920002120 photoresistant polymer Polymers 0.000 description 9
230000008901 benefit Effects 0.000 description 8
238000000151 deposition Methods 0.000 description 8
238000005259 measurement Methods 0.000 description 8
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
239000002019 doping agent Substances 0.000 description 7
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
230000003247 decreasing effect Effects 0.000 description 6
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
238000010521 absorption reaction Methods 0.000 description 5
238000005229 chemical vapour deposition Methods 0.000 description 5
239000012535 impurity Substances 0.000 description 5
238000002310 reflectometry Methods 0.000 description 5
230000004044 response Effects 0.000 description 5
230000003595 spectral effect Effects 0.000 description 5
229910052681 coesite Inorganic materials 0.000 description 4
229910052906 cristobalite Inorganic materials 0.000 description 4
230000008021 deposition Effects 0.000 description 4
238000009792 diffusion process Methods 0.000 description 4
150000002739 metals Chemical class 0.000 description 4
238000012545 processing Methods 0.000 description 4
230000005855 radiation Effects 0.000 description 4
230000006798 recombination Effects 0.000 description 4
238000005215 recombination Methods 0.000 description 4
238000000926 separation method Methods 0.000 description 4
229910052682 stishovite Inorganic materials 0.000 description 4
229910052905 tridymite Inorganic materials 0.000 description 4
230000005641 tunneling Effects 0.000 description 4
239000011701 zinc Substances 0.000 description 4
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 3
238000005275 alloying Methods 0.000 description 3
229910052782 aluminium Inorganic materials 0.000 description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
239000010407 anodic oxide Substances 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 3
230000015556 catabolic process Effects 0.000 description 3
238000006731 degradation reaction Methods 0.000 description 3
238000005530 etching Methods 0.000 description 3
239000011521 glass Substances 0.000 description 3
229910002804 graphite Inorganic materials 0.000 description 3
239000010439 graphite Substances 0.000 description 3
230000003287 optical effect Effects 0.000 description 3
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
230000001681 protective effect Effects 0.000 description 3
239000000377 silicon dioxide Substances 0.000 description 3
235000012239 silicon dioxide Nutrition 0.000 description 3
239000000243 solution Substances 0.000 description 3
229910052717 sulfur Inorganic materials 0.000 description 3
235000002906 tartaric acid Nutrition 0.000 description 3
239000011975 tartaric acid Substances 0.000 description 3
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
229910052725 zinc Inorganic materials 0.000 description 3
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
229910017974 NH40H Inorganic materials 0.000 description 2
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
238000007743 anodising Methods 0.000 description 2
230000004888 barrier function Effects 0.000 description 2
230000008859 change Effects 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
239000013078 crystal Substances 0.000 description 2
239000003792 electrolyte Substances 0.000 description 2
238000005566 electron beam evaporation Methods 0.000 description 2
238000009713 electroplating Methods 0.000 description 2
238000002474 experimental method Methods 0.000 description 2
230000004907 flux Effects 0.000 description 2
229910052733 gallium Inorganic materials 0.000 description 2
238000004943 liquid phase epitaxy Methods 0.000 description 2
229910001635 magnesium fluoride Inorganic materials 0.000 description 2
238000002156 mixing Methods 0.000 description 2
WTEVQBCEXWBHNA-YFHOEESVSA-N neral Chemical compound CC(C)=CCC\C(C)=C/C=O WTEVQBCEXWBHNA-YFHOEESVSA-N 0.000 description 2
238000007747 plating Methods 0.000 description 2
238000011160 research Methods 0.000 description 2
238000001228 spectrum Methods 0.000 description 2
239000000126 substance Substances 0.000 description 2
238000012360 testing method Methods 0.000 description 2
239000012808 vapor phase Substances 0.000 description 2
229910004613 CdTe Inorganic materials 0.000 description 1
WTEVQBCEXWBHNA-UHFFFAOYSA-N Citral Natural products CC(C)=CCCC(C)=CC=O WTEVQBCEXWBHNA-UHFFFAOYSA-N 0.000 description 1
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
241000282337 Nasua nasua Species 0.000 description 1
101100114416 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) con-10 gene Proteins 0.000 description 1
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
239000005864 Sulphur Substances 0.000 description 1
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
238000013459 approach Methods 0.000 description 1
230000008033 biological extinction Effects 0.000 description 1
229910052793 cadmium Inorganic materials 0.000 description 1
BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
WTEVQBCEXWBHNA-JXMROGBWSA-N citral A Natural products CC(C)=CCC\C(C)=C\C=O WTEVQBCEXWBHNA-JXMROGBWSA-N 0.000 description 1
238000012937 correction Methods 0.000 description 1
230000006378 damage Effects 0.000 description 1
230000000593 degrading effect Effects 0.000 description 1
238000013461 design Methods 0.000 description 1
230000001627 detrimental effect Effects 0.000 description 1
230000005684 electric field Effects 0.000 description 1
239000008151 electrolyte solution Substances 0.000 description 1
238000000572 ellipsometry Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
230000017525 heat dissipation Effects 0.000 description 1
-1 i.e. Substances 0.000 description 1
238000002513 implantation Methods 0.000 description 1
230000000977 initiatory effect Effects 0.000 description 1
239000012212 insulator Substances 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
229910052749 magnesium Inorganic materials 0.000 description 1
239000011777 magnesium Substances 0.000 description 1
ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000002844 melting Methods 0.000 description 1
238000001451 molecular beam epitaxy Methods 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
239000002674 ointment Substances 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
230000035515 penetration Effects 0.000 description 1
239000005360 phosphosilicate glass Substances 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
230000008569 process Effects 0.000 description 1
239000011241 protective layer Substances 0.000 description 1
238000010926 purge Methods 0.000 description 1
239000000376 reactant Substances 0.000 description 1
230000009467 reduction Effects 0.000 description 1
229910052711 selenium Inorganic materials 0.000 description 1
239000011669 selenium Substances 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
239000007787 solid Substances 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
239000011593 sulfur Substances 0.000 description 1
230000001360 synchronised effect Effects 0.000 description 1
239000004408 titanium dioxide Substances 0.000 description 1
239000012780 transparent material Substances 0.000 description 1
238000001771 vacuum deposition Methods 0.000 description 1
CZPRKINNVBONSF-UHFFFAOYSA-M zinc;dioxido(oxo)phosphanium Chemical compound [Zn+2].[O-][P+]([O-])=O CZPRKINNVBONSF-UHFFFAOYSA-M 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells

Landscapes

Photovoltaic Devices (AREA)

CA000324090A 1978-03-22 1979-03-22 Piles solaires en couches minces a jonctions homopolaires Expired CA1137604A (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA000408201A CA1150807A (fr)	1978-03-22	1982-07-27	Cellules solaires a homojonction peu profonde

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US88907878A	1978-03-22	1978-03-22
US889,078		1978-03-22

Publications (1)

Publication Number	Publication Date
CA1137604A true CA1137604A (fr)	1982-12-14

Family

ID=25394474

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000324090A Expired CA1137604A (fr)	1978-03-22	1979-03-22	Piles solaires en couches minces a jonctions homopolaires

Country Status (5)

Country	Link
EP (1)	EP0011629A4 (fr)
JP (1)	JPS55500168A (fr)
CA (1)	CA1137604A (fr)
SE (1)	SE439079B (fr)
WO (1)	WO1979000813A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4753683A (en) *	1985-09-09	1988-06-28	Hughes Aircraft Company	Gallium arsenide solar cell system
EP0236447A1 (fr) *	1985-09-09	1987-09-16	Hughes Aircraft Company	Systeme de cellules solaires a l'arseniure de gallium
US5286698A (en) *	1989-04-25	1994-02-15	University Of Notre Dame Du Lac	Metal oxide catalysts
US10154923B2 (en)	2010-07-15	2018-12-18	Eyenovia, Inc.	Drop generating device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3758348A (en) *	1970-08-13	1973-09-11	Westinghouse Electric Corp	Method for preparing solar cells
US3982265A (en) *	1975-09-19	1976-09-21	Bell Telephone Laboratories, Incorporated	Devices containing aluminum-V semiconductor and method for making
US4128843A (en) *	1977-10-14	1978-12-05	Honeywell Inc.	GaP Directed field UV photodiode

1979
- 1979-03-21 JP JP50056879A patent/JPS55500168A/ja active Pending
- 1979-03-21 WO PCT/US1979/000181 patent/WO1979000813A1/fr not_active Ceased
- 1979-03-22 CA CA000324090A patent/CA1137604A/fr not_active Expired
- 1979-10-23 EP EP19790900329 patent/EP0011629A4/fr not_active Ceased
- 1979-11-20 SE SE7909584A patent/SE439079B/sv not_active IP Right Cessation

Also Published As

Publication number	Publication date
JPS55500168A (fr)	1980-03-27
EP0011629A1 (fr)	1980-06-11
SE439079B (sv)	1985-05-28
EP0011629A4 (fr)	1980-10-17
WO1979000813A1 (fr)	1979-10-18
SE7909584L (sv)	1979-11-20

Legal Events

Date	Code	Title	Description
1999-12-14	MKEX	Expiry

Publication	Publication Date	Title
US4227941A (en)	1980-10-14	Shallow-homojunction solar cells
US4248675A (en)	1981-02-03	Method of forming electrical contact and antireflection layer on solar cells
US6307148B1 (en)	2001-10-23	Compound semiconductor solar cell and production method thereof
US6169246B1 (en)	2001-01-02	Photovoltaic devices comprising zinc stannate buffer layer and method for making
EP0118579B1 (fr)	1989-07-26	Cellules photovoltaiques en couche mince à hétérojonction et procédé pour leur fabrication
EP1724840B1 (fr)	2013-05-08	Cellule photoelectrique
US4612411A (en)	1986-09-16	Thin film solar cell with ZnO window layer
US8723020B2 (en)	2014-05-13	Textured transparent conductive layer and method of producing it
US4547622A (en)	1985-10-15	Solar cells and photodetectors
US20120006390A1 (en)	2012-01-12	Nano-wire solar cell or detector
US20030172967A1 (en)	2003-09-18	Solar battery cell and manufacturing method thereof
US4626322A (en)	1986-12-02	Photoelectrochemical preparation of a solid-state semiconductor photonic device
GB2034973A (en)	1980-06-11	Solar cell with multi-layer insulation
EP0623246A1 (fr)	1994-11-09	CELLULE PHOTOVOLTAIQUE A COUCHE CdS MINCE
JP3801342B2 (ja)	2006-07-26	太陽電池用基板、その製造方法及び半導体素子
WO1990009039A1 (fr)	1990-08-09	Cellule solaire d'un rendement eleve
US3982265A (en)	1976-09-21	Devices containing aluminum-V semiconductor and method for making
CA1137604A (fr)	1982-12-14	Piles solaires en couches minces a jonctions homopolaires
JP3408618B2 (ja)	2003-05-19	太陽電池の製造方法
Kakishita et al.	1994	Zn3P2 photovoltaic film growth for Zn3P2/ZnSe solar cell
Bozler et al.	1977	High‐efficiency GaAs shallow‐homojunction solar cells
CA1150807A (fr)	1983-07-26	Cellules solaires a homojonction peu profonde
JP3130993B2 (ja)	2001-01-31	太陽電池
Pande et al.	1980	The preparation and properties of thin polycrystalline GaAs solar cells with grain boundary edge passivation
US4366334A (en)	1982-12-28	Photovoltaic cell usable as a solar cell