CA1150807A - Cellules solaires a homojonction peu profonde - Google Patents

Cellules solaires a homojonction peu profonde

Info

Publication number: CA1150807A
Authority: CA; Canada
Prior art keywords: layer; gaas; cell; anodic; cells
Prior art date: 1978-03-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000408201A

Other languages

English (en)

Inventor

Carl O. Bozler

Ralph L. Chapman

John C. C. Fan

Robert W. Mcclelland

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Massachusetts Institute of Technology

Original Assignee

Massachusetts Institute of Technology

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-03-22

Filing date

1982-07-27

Publication date

1983-07-26

1979-03-22 Priority claimed from CA000324090A external-priority patent/CA1137604A/fr

1982-07-27 Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology

1982-07-27 Priority to CA000408201A priority Critical patent/CA1150807A/fr

1983-07-26 Application granted granted Critical

1983-07-26 Publication of CA1150807A publication Critical patent/CA1150807A/fr

Status Expired legal-status Critical Current

Links

238000000576 coating method Methods 0.000 claims abstract description 31
239000011248 coating agent Substances 0.000 claims abstract description 28
238000000034 method Methods 0.000 claims abstract description 21
239000004065 semiconductor Substances 0.000 claims abstract description 20
229910052751 metal Inorganic materials 0.000 claims abstract description 19
239000002184 metal Substances 0.000 claims abstract description 19
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 13
238000007743 anodising Methods 0.000 claims description 2
239000010410 layer Substances 0.000 description 148
229910001218 Gallium arsenide Inorganic materials 0.000 description 85
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 79
239000000758 substrate Substances 0.000 description 40
239000000463 material Substances 0.000 description 24
239000011135 tin Substances 0.000 description 23
239000010931 gold Substances 0.000 description 22
238000002048 anodisation reaction Methods 0.000 description 20
239000000969 carrier Substances 0.000 description 16
229910052718 tin Inorganic materials 0.000 description 13
238000006243 chemical reaction Methods 0.000 description 12
229910052732 germanium Inorganic materials 0.000 description 12
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 11
229910052737 gold Inorganic materials 0.000 description 11
235000012431 wafers Nutrition 0.000 description 10
230000007423 decrease Effects 0.000 description 9
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
229920002120 photoresistant polymer Polymers 0.000 description 9
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
230000008901 benefit Effects 0.000 description 8
238000004519 manufacturing process Methods 0.000 description 8
238000005259 measurement Methods 0.000 description 8
DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 7
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
238000005229 chemical vapour deposition Methods 0.000 description 6
238000000151 deposition Methods 0.000 description 6
239000002019 doping agent Substances 0.000 description 6
229910052710 silicon Inorganic materials 0.000 description 6
239000010703 silicon Substances 0.000 description 6
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
238000010521 absorption reaction Methods 0.000 description 5
239000012535 impurity Substances 0.000 description 5
238000002310 reflectometry Methods 0.000 description 5
230000003595 spectral effect Effects 0.000 description 5
229910001868 water Inorganic materials 0.000 description 5
239000011701 zinc Substances 0.000 description 5
230000015556 catabolic process Effects 0.000 description 4
229910052681 coesite Inorganic materials 0.000 description 4
229910052906 cristobalite Inorganic materials 0.000 description 4
230000003247 decreasing effect Effects 0.000 description 4
238000006731 degradation reaction Methods 0.000 description 4
238000009792 diffusion process Methods 0.000 description 4
150000002739 metals Chemical class 0.000 description 4
230000006798 recombination Effects 0.000 description 4
238000005215 recombination Methods 0.000 description 4
230000004044 response Effects 0.000 description 4
238000000926 separation method Methods 0.000 description 4
239000000377 silicon dioxide Substances 0.000 description 4
235000012239 silicon dioxide Nutrition 0.000 description 4
229910052682 stishovite Inorganic materials 0.000 description 4
229910052905 tridymite Inorganic materials 0.000 description 4
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 3
238000005275 alloying Methods 0.000 description 3
229910052782 aluminium Inorganic materials 0.000 description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
239000010407 anodic oxide Substances 0.000 description 3
230000004888 barrier function Effects 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 3
230000008021 deposition Effects 0.000 description 3
238000005530 etching Methods 0.000 description 3
239000011521 glass Substances 0.000 description 3
229910002804 graphite Inorganic materials 0.000 description 3
239000010439 graphite Substances 0.000 description 3
230000003287 optical effect Effects 0.000 description 3
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
238000012545 processing Methods 0.000 description 3
230000001681 protective effect Effects 0.000 description 3
230000005855 radiation Effects 0.000 description 3
239000000243 solution Substances 0.000 description 3
229910052717 sulfur Inorganic materials 0.000 description 3
235000002906 tartaric acid Nutrition 0.000 description 3
239000011975 tartaric acid Substances 0.000 description 3
230000005641 tunneling Effects 0.000 description 3
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
229910052725 zinc Inorganic materials 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
QQONPFPTGQHPMA-UHFFFAOYSA-N Propene Chemical group CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
229910052799 carbon Inorganic materials 0.000 description 2
230000008859 change Effects 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
239000013078 crystal Substances 0.000 description 2
239000003792 electrolyte Substances 0.000 description 2
238000005566 electron beam evaporation Methods 0.000 description 2
238000009713 electroplating Methods 0.000 description 2
238000002474 experimental method Methods 0.000 description 2
230000004907 flux Effects 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
229910001635 magnesium fluoride Inorganic materials 0.000 description 2
238000002156 mixing Methods 0.000 description 2
238000007747 plating Methods 0.000 description 2
238000011160 research Methods 0.000 description 2
238000012360 testing method Methods 0.000 description 2
239000012808 vapor phase Substances 0.000 description 2
241000478345 Afer Species 0.000 description 1
CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
229910004613 CdTe Inorganic materials 0.000 description 1
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
229910017974 NH40H Inorganic materials 0.000 description 1
101100114416 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) con-10 gene Proteins 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
239000005864 Sulphur Substances 0.000 description 1
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
238000013459 approach Methods 0.000 description 1
230000008033 biological extinction Effects 0.000 description 1
229910052793 cadmium Inorganic materials 0.000 description 1
BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
239000004020 conductor Substances 0.000 description 1
238000012937 correction Methods 0.000 description 1
230000006378 damage Effects 0.000 description 1
230000000593 degrading effect Effects 0.000 description 1
238000013461 design Methods 0.000 description 1
230000001627 detrimental effect Effects 0.000 description 1
210000005069 ears Anatomy 0.000 description 1
230000005684 electric field Effects 0.000 description 1
239000008151 electrolyte solution Substances 0.000 description 1
238000000572 ellipsometry Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
230000017525 heat dissipation Effects 0.000 description 1
-1 i.e. Substances 0.000 description 1
238000005286 illumination Methods 0.000 description 1
238000002513 implantation Methods 0.000 description 1
230000006872 improvement Effects 0.000 description 1
230000000977 initiatory effect Effects 0.000 description 1
239000012212 insulator Substances 0.000 description 1
239000007788 liquid Substances 0.000 description 1
229910052749 magnesium Inorganic materials 0.000 description 1
239000011777 magnesium Substances 0.000 description 1
ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000002844 melting Methods 0.000 description 1
238000001451 molecular beam epitaxy Methods 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
239000002674 ointment Substances 0.000 description 1
230000035515 penetration Effects 0.000 description 1
239000012071 phase Substances 0.000 description 1
239000005360 phosphosilicate glass Substances 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
230000008569 process Effects 0.000 description 1
239000011241 protective layer Substances 0.000 description 1
238000010926 purge Methods 0.000 description 1
239000000376 reactant Substances 0.000 description 1
230000009467 reduction Effects 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
239000007787 solid Substances 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
239000000126 substance Substances 0.000 description 1
239000011593 sulfur Substances 0.000 description 1
230000001360 synchronised effect Effects 0.000 description 1
239000004408 titanium dioxide Substances 0.000 description 1
239000012780 transparent material Substances 0.000 description 1

Classifications

- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Photovoltaic Devices (AREA)

CA000408201A 1978-03-22 1982-07-27 Cellules solaires a homojonction peu profonde Expired CA1150807A (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA000408201A CA1150807A (fr)	1978-03-22	1982-07-27	Cellules solaires a homojonction peu profonde

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
US88907878A	1978-03-22	1978-03-22
US889,078		1978-03-22
CA000324090A CA1137604A (fr)	1978-03-22	1979-03-22	Piles solaires en couches minces a jonctions homopolaires
CA000408201A CA1150807A (fr)	1978-03-22	1982-07-27	Cellules solaires a homojonction peu profonde

Publications (1)

Publication Number	Publication Date
CA1150807A true CA1150807A (fr)	1983-07-26

Family

ID=27166146

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000408201A Expired CA1150807A (fr)	1978-03-22	1982-07-27	Cellules solaires a homojonction peu profonde

Country Status (1)

Country	Link
CA (1)	CA1150807A (fr)

1982
- 1982-07-27 CA CA000408201A patent/CA1150807A/fr not_active Expired

Legal Events

Date	Code	Title	Description
2000-07-26	MKEX	Expiry

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