CA1139893A - Transistor a effet de champ et methode de fabrication - Google Patents

Transistor a effet de champ et methode de fabrication

Info

Publication number
CA1139893A
CA1139893A CA000354607A CA354607A CA1139893A CA 1139893 A CA1139893 A CA 1139893A CA 000354607 A CA000354607 A CA 000354607A CA 354607 A CA354607 A CA 354607A CA 1139893 A CA1139893 A CA 1139893A
Authority
CA
Canada
Prior art keywords
semiconductor
gate regions
layer
regions
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000354607A
Other languages
English (en)
Inventor
Yasunobu Ishii
Kazuyoshi Asai
Katsuhiko Kurumada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of CA1139893A publication Critical patent/CA1139893A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
CA000354607A 1979-11-26 1980-06-23 Transistor a effet de champ et methode de fabrication Expired CA1139893A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP153451/'79 1979-11-26
JP15345179A JPS5676576A (en) 1979-11-26 1979-11-26 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
CA1139893A true CA1139893A (fr) 1983-01-18

Family

ID=15562833

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000354607A Expired CA1139893A (fr) 1979-11-26 1980-06-23 Transistor a effet de champ et methode de fabrication

Country Status (5)

Country Link
JP (1) JPS5676576A (fr)
CA (1) CA1139893A (fr)
DE (1) DE3024826C2 (fr)
GB (1) GB2065967B (fr)
NL (1) NL189534C (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501913A1 (fr) * 1981-03-10 1982-09-17 Thomson Csf Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
KR920022546A (ko) * 1991-05-31 1992-12-19 김광호 모오스 트랜지스터의 구조 및 그 제조방법
CN116313813B (zh) * 2023-03-29 2025-08-19 中芯越州集成电路制造(绍兴)有限公司 结型场效应晶体管制备方法及结型场效应晶体管

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2728532A1 (de) * 1977-06-24 1979-01-11 Siemens Ag Sperrschicht-feldeffekttransistor
NL188776C (nl) * 1979-04-21 1992-09-16 Nippon Telegraph & Telephone Veldeffecttransistorinrichting en werkwijze voor het vervaardigen daarvan.

Also Published As

Publication number Publication date
GB2065967B (en) 1983-07-13
DE3024826C2 (de) 1985-05-09
NL189534C (nl) 1993-05-03
NL189534B (nl) 1992-12-01
DE3024826A1 (de) 1981-05-27
NL8003944A (nl) 1981-06-16
JPS5676576A (en) 1981-06-24
GB2065967A (en) 1981-07-01

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Legal Events

Date Code Title Description
MKEX Expiry