CA1141467A - Serial-parallel-serial ccd memory system with fan out and fan in circuits - Google Patents

Serial-parallel-serial ccd memory system with fan out and fan in circuits

Info

Publication number: CA1141467A
Authority: CA; Canada
Prior art keywords: serial; output; input; fan; parallel
Prior art date: 1979-10-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000358897A

Other languages

English (en)

French (fr)

Inventor

Thomas V. Harroun

Norbert G. Vogl, Jr.

Lawrence G. Heller

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-10-24

Filing date

1980-08-25

Publication date

1983-02-15

1980-08-25 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1983-02-15 Application granted granted Critical

1983-02-15 Publication of CA1141467A publication Critical patent/CA1141467A/en

Status Expired legal-status Critical Current

Links

230000015654 memory Effects 0.000 title claims abstract description 51
238000012546 transfer Methods 0.000 claims description 43
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
229920005591 polysilicon Polymers 0.000 claims description 24
238000009413 insulation Methods 0.000 claims description 4
239000000758 substrate Substances 0.000 claims description 3
239000004065 semiconductor Substances 0.000 claims description 2
239000004020 conductor Substances 0.000 claims 4
230000001902 propagating effect Effects 0.000 claims 1
238000000034 method Methods 0.000 description 7
230000000644 propagated effect Effects 0.000 description 4
IVQOFBKHQCTVQV-UHFFFAOYSA-N 2-hydroxy-2,2-diphenylacetic acid 2-(diethylamino)ethyl ester Chemical compound C=1C=CC=CC=1C(O)(C(=O)OCCN(CC)CC)C1=CC=CC=C1 IVQOFBKHQCTVQV-UHFFFAOYSA-N 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
238000002955 isolation Methods 0.000 description 3
230000008569 process Effects 0.000 description 3
AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
244000201986 Cassia tora Species 0.000 description 1
241000272470 Circus Species 0.000 description 1
241000429017 Pectis Species 0.000 description 1
241001163743 Perlodes Species 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000012856 packing Methods 0.000 description 1
NCAIGTHBQTXTLR-UHFFFAOYSA-N phentermine hydrochloride Chemical compound [Cl-].CC(C)([NH3+])CC1=CC=CC=C1 NCAIGTHBQTXTLR-UHFFFAOYSA-N 0.000 description 1
229920000136 polysorbate Polymers 0.000 description 1
230000000717 retained effect Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
230000002226 simultaneous effect Effects 0.000 description 1
230000001360 synchronised effect Effects 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/287—Organisation of a multiplicity of shift registers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

Solid State Image Pick-Up Elements (AREA)
Semiconductor Memories (AREA)
Read Only Memory (AREA)
Dram (AREA)

CA000358897A 1979-10-24 1980-08-25 Serial-parallel-serial ccd memory system with fan out and fan in circuits Expired CA1141467A (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US06/087,843 US4288864A (en)	1979-10-24	1979-10-24	Serial-parallel-serial CCD memory system with fan out and fan in circuits
US087,843		1979-10-24

Publications (1)

Publication Number	Publication Date
CA1141467A true CA1141467A (en)	1983-02-15

Family

ID=22207579

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000358897A Expired CA1141467A (en)	1979-10-24	1980-08-25	Serial-parallel-serial ccd memory system with fan out and fan in circuits

Country Status (7)

Country	Link
US (1)	US4288864A (2)
EP (1)	EP0028311A1 (2)
JP (1)	JPS5668995A (2)
AU (1)	AU6275080A (2)
BR (1)	BR8006769A (2)
CA (1)	CA1141467A (2)
ES (1)	ES8201342A1 (2)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57150190A (en) *	1981-02-27	1982-09-16	Hitachi Ltd	Monolithic storage device
EP0060198A3 (en) *	1981-03-09	1985-05-15	FAIRCHILD CAMERA & INSTRUMENT CORPORATION	Serial-parallel-serial charge coupled device and method of transferring charge therein
US4493060A (en) *	1981-03-09	1985-01-08	Fairchild Camera & Instrument Corp.	Serial-parallel-serial charged coupled device memory and a method of transferring charge therein
US5508967A (en) *	1993-08-09	1996-04-16	Matsushita Electric Industrial Co., Ltd.	Line memory
KR100190373B1 (ko) *	1996-02-08	1999-06-01	김영환	리드 패스를 위한 고속 동기식 메모리 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3902186A (en) *	1970-10-28	1975-08-26	Gen Electric	Surface charge transistor devices
US4177391A (en) *	1973-01-24	1979-12-04	Hitachi, Ltd.	Charge transfer semiconductor device
US3889245A (en) *	1973-07-02	1975-06-10	Texas Instruments Inc	Metal-insulator-semiconductor compatible charge transfer device memory system
US3913077A (en) *	1974-04-17	1975-10-14	Hughes Aircraft Co	Serial-parallel-serial ccd memory with interlaced storage
US3967254A (en) *	1974-11-18	1976-06-29	Rca Corporation	Charge transfer memory
US3944990A (en) *	1974-12-06	1976-03-16	Intel Corporation	Semiconductor memory employing charge-coupled shift registers with multiplexed refresh amplifiers
US4024514A (en) *	1975-06-30	1977-05-17	Honeywell Information Systems, Inc.	Multiphase series-parallel-series charge-coupled device registers with simplified input clocking
US4028671A (en) *	1975-10-06	1977-06-07	Motorola, Inc.	Charge coupled storage device multiplexer
JPS5826115B2 (ja) *	1976-08-02	1983-05-31	株式会社東芝	Ｃｃｄシフトレジスタ
GB1506764A (en) *	1976-09-10	1978-04-12	Secr Defence	Delay lines
US4117546A (en) *	1977-12-30	1978-09-26	International Business Machines Corporation	Interlaced ccd memory
US4199691A (en) *	1978-06-16	1980-04-22	Rca Corporation	CCD Multiple channel network
US4211936A (en) *	1978-06-16	1980-07-08	Rca Corporation	CCD Gate electrode structures and systems employing the same
DE2842285C2 (de) *	1978-09-28	1980-09-18	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Ladungsverschiebespeicher in Seriell-Parallel-Seriell-Organisation

1979
- 1979-10-24 US US06/087,843 patent/US4288864A/en not_active Expired - Lifetime
1980
- 1980-08-01 JP JP10517980A patent/JPS5668995A/ja active Granted
- 1980-08-25 CA CA000358897A patent/CA1141467A/en not_active Expired
- 1980-09-25 EP EP80105773A patent/EP0028311A1/en not_active Withdrawn
- 1980-09-26 AU AU62750/80A patent/AU6275080A/en not_active Abandoned
- 1980-10-21 BR BR8006769A patent/BR8006769A/pt unknown
- 1980-10-23 ES ES496189A patent/ES8201342A1/es not_active Expired

Also Published As

Publication number	Publication date
EP0028311A1 (en)	1981-05-13
JPS5713956B2 (2)	1982-03-20
BR8006769A (pt)	1981-04-28
ES496189A0 (es)	1981-12-01
JPS5668995A (en)	1981-06-09
US4288864A (en)	1981-09-08
ES8201342A1 (es)	1981-12-01
AU6275080A (en)	1981-04-30

Legal Events

Date	Code	Title	Description
2000-02-15	MKEX	Expiry

Publication	Publication Date	Title
CA1065055A (en)	1979-10-23	Charge coupled device systems
US5698997A (en)	1997-12-16	Resonant tunneling diode structures for functionally complete low power logic
US4092734A (en)	1978-05-30	Analogue memory
US3852799A (en)	1974-12-03	Buried channel charge coupled apparatus
CA1070015A (en)	1980-01-15	Charge transfer memory
US3796927A (en)	1974-03-12	Three dimensional charge coupled devices
US4623911A (en)	1986-11-18	High circuit density ICs
IL46895A (en)	1977-02-28	C c d memory with interlaced storage
CA1141467A (en)	1983-02-15	Serial-parallel-serial ccd memory system with fan out and fan in circuits
US4096522A (en)	1978-06-20	Monolithic semiconductor mask programmable ROM and a method for manufacturing the same
US5012143A (en)	1991-04-30	Integrated delay line
US4211936A (en)	1980-07-08	CCD Gate electrode structures and systems employing the same
GB1322990A (en)	1973-07-11	Integrated circuit devices
CA1256996A (en)	1989-07-04	Charge-coupled device
USRE35591E (en)	1997-08-19	Memory cell array semiconductor integrated circuit device
US4072977A (en)	1978-02-07	Read only memory utilizing charge coupled device structures
US4163239A (en)	1979-07-31	Second level phase lines for CCD line imager
JPS61184062A (ja)	1986-08-16	電荷結合イメージセンサ装置
US3975717A (en)	1976-08-17	Charge coupled device stack memory organization and refresh method
US4117546A (en)	1978-09-26	Interlaced ccd memory
US4225947A (en)	1980-09-30	Three phase line-addressable serial-parallel-serial storage array
US3735358A (en)	1973-05-22	Specialized array logic
US3070711A (en)	1962-12-25	Shift register
US3806657A (en)	1974-04-23	Merging time slot interchanger for time division switching networks
US4206370A (en)	1980-06-03	Serial-parallel-loop CCD register