JPS5713956B2 - - Google Patents

Info

Publication number
JPS5713956B2
JPS5713956B2 JP10517980A JP10517980A JPS5713956B2 JP S5713956 B2 JPS5713956 B2 JP S5713956B2 JP 10517980 A JP10517980 A JP 10517980A JP 10517980 A JP10517980 A JP 10517980A JP S5713956 B2 JPS5713956 B2 JP S5713956B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10517980A
Other languages
Japanese (ja)
Other versions
JPS5668995A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5668995A publication Critical patent/JPS5668995A/ja
Publication of JPS5713956B2 publication Critical patent/JPS5713956B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287Organisation of a multiplicity of shift registers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
JP10517980A 1979-10-24 1980-08-01 Seriessparallellseries memory system Granted JPS5668995A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/087,843 US4288864A (en) 1979-10-24 1979-10-24 Serial-parallel-serial CCD memory system with fan out and fan in circuits

Publications (2)

Publication Number Publication Date
JPS5668995A JPS5668995A (en) 1981-06-09
JPS5713956B2 true JPS5713956B2 (2) 1982-03-20

Family

ID=22207579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10517980A Granted JPS5668995A (en) 1979-10-24 1980-08-01 Seriessparallellseries memory system

Country Status (7)

Country Link
US (1) US4288864A (2)
EP (1) EP0028311A1 (2)
JP (1) JPS5668995A (2)
AU (1) AU6275080A (2)
BR (1) BR8006769A (2)
CA (1) CA1141467A (2)
ES (1) ES8201342A1 (2)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150190A (en) * 1981-02-27 1982-09-16 Hitachi Ltd Monolithic storage device
EP0060198A3 (en) * 1981-03-09 1985-05-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Serial-parallel-serial charge coupled device and method of transferring charge therein
US4493060A (en) * 1981-03-09 1985-01-08 Fairchild Camera & Instrument Corp. Serial-parallel-serial charged coupled device memory and a method of transferring charge therein
US5508967A (en) * 1993-08-09 1996-04-16 Matsushita Electric Industrial Co., Ltd. Line memory
KR100190373B1 (ko) * 1996-02-08 1999-06-01 김영환 리드 패스를 위한 고속 동기식 메모리 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902186A (en) * 1970-10-28 1975-08-26 Gen Electric Surface charge transistor devices
US4177391A (en) * 1973-01-24 1979-12-04 Hitachi, Ltd. Charge transfer semiconductor device
US3889245A (en) * 1973-07-02 1975-06-10 Texas Instruments Inc Metal-insulator-semiconductor compatible charge transfer device memory system
US3913077A (en) * 1974-04-17 1975-10-14 Hughes Aircraft Co Serial-parallel-serial ccd memory with interlaced storage
US3967254A (en) * 1974-11-18 1976-06-29 Rca Corporation Charge transfer memory
US3944990A (en) * 1974-12-06 1976-03-16 Intel Corporation Semiconductor memory employing charge-coupled shift registers with multiplexed refresh amplifiers
US4024514A (en) * 1975-06-30 1977-05-17 Honeywell Information Systems, Inc. Multiphase series-parallel-series charge-coupled device registers with simplified input clocking
US4028671A (en) * 1975-10-06 1977-06-07 Motorola, Inc. Charge coupled storage device multiplexer
JPS5826115B2 (ja) * 1976-08-02 1983-05-31 株式会社東芝 Ccdシフトレジスタ
GB1506764A (en) * 1976-09-10 1978-04-12 Secr Defence Delay lines
US4117546A (en) * 1977-12-30 1978-09-26 International Business Machines Corporation Interlaced ccd memory
US4199691A (en) * 1978-06-16 1980-04-22 Rca Corporation CCD Multiple channel network
US4211936A (en) * 1978-06-16 1980-07-08 Rca Corporation CCD Gate electrode structures and systems employing the same
DE2842285C2 (de) * 1978-09-28 1980-09-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Ladungsverschiebespeicher in Seriell-Parallel-Seriell-Organisation

Also Published As

Publication number Publication date
EP0028311A1 (en) 1981-05-13
BR8006769A (pt) 1981-04-28
ES496189A0 (es) 1981-12-01
JPS5668995A (en) 1981-06-09
US4288864A (en) 1981-09-08
ES8201342A1 (es) 1981-12-01
AU6275080A (en) 1981-04-30
CA1141467A (en) 1983-02-15

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