CA1163377A - Transistor en couche mince - Google Patents

Transistor en couche mince

Info

Publication number
CA1163377A
CA1163377A CA000428672A CA428672A CA1163377A CA 1163377 A CA1163377 A CA 1163377A CA 000428672 A CA000428672 A CA 000428672A CA 428672 A CA428672 A CA 428672A CA 1163377 A CA1163377 A CA 1163377A
Authority
CA
Canada
Prior art keywords
layer
thin film
field effect
effect transistor
amorphous alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000428672A
Other languages
English (en)
Inventor
Richard A. Flasck
Scott H. Holmberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of CA1163377A publication Critical patent/CA1163377A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/366—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H10D48/381—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
CA000428672A 1979-12-13 1983-05-20 Transistor en couche mince Expired CA1163377A (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10301179A 1979-12-13 1979-12-13
US06/103,011 1979-12-13
US20827880A 1980-11-19 1980-11-19
US208,278 1980-11-19

Publications (1)

Publication Number Publication Date
CA1163377A true CA1163377A (fr) 1984-03-06

Family

ID=26799985

Family Applications (3)

Application Number Title Priority Date Filing Date
CA000366712A Expired CA1153480A (fr) 1979-12-13 1980-12-12 Transistor en couche mince
CA000428672A Expired CA1163377A (fr) 1979-12-13 1983-05-20 Transistor en couche mince
CA000460196A Expired CA1188008A (fr) 1979-12-13 1984-08-01 Transistor en couche mince

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CA000366712A Expired CA1153480A (fr) 1979-12-13 1980-12-12 Transistor en couche mince

Family Applications After (1)

Application Number Title Priority Date Filing Date
CA000460196A Expired CA1188008A (fr) 1979-12-13 1984-08-01 Transistor en couche mince

Country Status (14)

Country Link
KR (2) KR840001605B1 (fr)
AU (2) AU538008B2 (fr)
BE (1) BE886630A (fr)
CA (3) CA1153480A (fr)
DE (2) DE3046358C2 (fr)
FR (1) FR2474763B1 (fr)
GB (2) GB2067353B (fr)
IE (1) IE51076B1 (fr)
IL (1) IL61679A (fr)
IT (1) IT1193999B (fr)
MX (1) MX151189A (fr)
NL (2) NL8006770A (fr)
SE (1) SE8008738L (fr)
SG (1) SG72684G (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294796B1 (en) * 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5650637A (en) * 1982-04-30 1997-07-22 Seiko Epson Corporation Active matrix assembly
US5677547A (en) * 1982-04-30 1997-10-14 Seiko Epson Corporation Thin film transistor and display device including same
US5365079A (en) * 1982-04-30 1994-11-15 Seiko Epson Corporation Thin film transistor and display device including same
US4547789A (en) * 1983-11-08 1985-10-15 Energy Conversion Devices, Inc. High current thin film transistor
US4633284A (en) * 1983-11-08 1986-12-30 Energy Conversion Devices, Inc. Thin film transistor having an annealed gate oxide and method of making same
US4543320A (en) * 1983-11-08 1985-09-24 Energy Conversion Devices, Inc. Method of making a high performance, small area thin film transistor
US4620208A (en) * 1983-11-08 1986-10-28 Energy Conversion Devices, Inc. High performance, small area thin film transistor
US4752814A (en) * 1984-03-12 1988-06-21 Xerox Corporation High voltage thin film transistor
US4668968A (en) * 1984-05-14 1987-05-26 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4769338A (en) * 1984-05-14 1988-09-06 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
US4670763A (en) * 1984-05-14 1987-06-02 Energy Conversion Devices, Inc. Thin film field effect transistor
US4673957A (en) * 1984-05-14 1987-06-16 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
KR100741798B1 (ko) * 2004-12-30 2007-07-25 엘지전자 주식회사 건조기 일체형 세탁기
CN112420821B (zh) * 2020-10-29 2021-11-19 北京元芯碳基集成电路研究院 一种基于碳基材料的y型栅结构及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3384792A (en) * 1965-06-01 1968-05-21 Electro Optical Systems Inc Stacked electrode field effect triode
US4115799A (en) * 1977-01-26 1978-09-19 Westinghouse Electric Corp. Thin film copper transition between aluminum and indium copper films
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
DE2820331C3 (de) * 1978-05-10 1982-03-18 Lüder, Ernst, Prof. Dr.-Ing., 7000 Stuttgart Dünnschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung
GB2052853A (en) * 1979-06-29 1981-01-28 Ibm Vertical fet on an insulating substrate

Also Published As

Publication number Publication date
GB2131605A (en) 1984-06-20
CA1188008A (fr) 1985-05-28
BE886630A (fr) 1981-04-01
KR830004680A (ko) 1983-07-16
KR840001605B1 (ko) 1984-10-11
DE3051063C2 (fr) 1991-04-11
GB2067353A (en) 1981-07-22
IT8026642A0 (it) 1980-12-12
FR2474763A1 (fr) 1981-07-31
NL8401928A (nl) 1984-10-01
SG72684G (en) 1985-03-29
AU554058B2 (en) 1986-08-07
IE802615L (en) 1981-06-13
CA1153480A (fr) 1983-09-06
IE51076B1 (en) 1986-10-01
FR2474763B1 (fr) 1987-03-20
IL61679A0 (en) 1981-01-30
DE3046358A1 (de) 1981-09-17
MX151189A (es) 1984-10-09
SE8008738L (sv) 1981-06-14
GB2131605B (en) 1985-02-13
KR850001478A (ko) 1985-02-18
NL8006770A (nl) 1981-07-16
DE3046358C2 (de) 1987-02-26
AU6531380A (en) 1981-06-18
GB2067353B (en) 1984-07-04
KR850000902B1 (ko) 1985-06-26
GB8326775D0 (en) 1983-11-09
IT1193999B (it) 1988-08-31
AU2845184A (en) 1984-09-13
IL61679A (en) 1984-11-30
AU538008B2 (en) 1984-07-26

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