CA1207423A - Laser a semiconducteur, et sa fabrication - Google Patents

Info

Publication number

CA1207423A

CA1207423A CA000415974A CA415974A CA1207423A CA 1207423 A CA1207423 A CA 1207423A CA 000415974 A CA000415974 A CA 000415974A CA 415974 A CA415974 A CA 415974A CA 1207423 A CA1207423 A CA 1207423A

Authority

CA

Canada

Prior art keywords

layer

substrate

overlying

confinement

ridge

Prior art date

1982-11-19

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000004065 semiconductor Substances 0.000 title claims abstract description 33
• 238000004519 manufacturing process Methods 0.000 title abstract description 4
• 239000000758 substrate Substances 0.000 claims abstract description 55
• 229910045601 alloy Inorganic materials 0.000 claims description 6
• 239000000956 alloy Substances 0.000 claims description 6
• BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
• 229910052738 indium Inorganic materials 0.000 claims 1
• APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
• 238000000034 method Methods 0.000 abstract description 12
• 239000000463 material Substances 0.000 abstract description 10
• 238000000151 deposition Methods 0.000 abstract description 8
• 238000005530 etching Methods 0.000 abstract description 4
• 239000011248 coating agent Substances 0.000 abstract 1
• 238000000576 coating method Methods 0.000 abstract 1
• GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 9
• 150000001875 compounds Chemical class 0.000 description 4
• OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
• 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
• 230000000903 blocking effect Effects 0.000 description 2
• 230000008021 deposition Effects 0.000 description 2
• PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
• 229910052737 gold Inorganic materials 0.000 description 2
• 239000010931 gold Substances 0.000 description 2
• 239000007791 liquid phase Substances 0.000 description 2
• 238000004943 liquid phase epitaxy Methods 0.000 description 2
• 230000000873 masking effect Effects 0.000 description 2
• BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
• 229910052710 silicon Inorganic materials 0.000 description 2
• 239000010703 silicon Substances 0.000 description 2
• 238000010186 staining Methods 0.000 description 2
• 238000000927 vapour-phase epitaxy Methods 0.000 description 2
• YSGQGNQWBLYHPE-CFUSNLFHSA-N (7r,8r,9s,10r,13s,14s,17s)-17-hydroxy-7,13-dimethyl-2,6,7,8,9,10,11,12,14,15,16,17-dodecahydro-1h-cyclopenta[a]phenanthren-3-one Chemical compound C1C[C@]2(C)[C@@H](O)CC[C@H]2[C@@H]2[C@H](C)CC3=CC(=O)CC[C@@H]3[C@H]21 YSGQGNQWBLYHPE-CFUSNLFHSA-N 0.000 description 1
• WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
• BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
• ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
• 229910000756 V alloy Inorganic materials 0.000 description 1
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
• GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
• 229910052794 bromium Inorganic materials 0.000 description 1
• 238000000354 decomposition reaction Methods 0.000 description 1
• 239000012776 electronic material Substances 0.000 description 1
• 238000000407 epitaxy Methods 0.000 description 1
• 230000008020 evaporation Effects 0.000 description 1
• 238000001704 evaporation Methods 0.000 description 1
• 239000007789 gas Substances 0.000 description 1
• 238000010438 heat treatment Methods 0.000 description 1
• 238000002347 injection Methods 0.000 description 1
• 239000007924 injection Substances 0.000 description 1
• 230000003287 optical effect Effects 0.000 description 1
• TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
• 239000001301 oxygen Substances 0.000 description 1
• 229910052760 oxygen Inorganic materials 0.000 description 1
• 239000012071 phase Substances 0.000 description 1
• 229910052697 platinum Inorganic materials 0.000 description 1
• 229910000077 silane Inorganic materials 0.000 description 1
• 235000012239 silicon dioxide Nutrition 0.000 description 1
• 239000000377 silicon dioxide Substances 0.000 description 1
• 238000005245 sintering Methods 0.000 description 1
• 238000001771 vacuum deposition Methods 0.000 description 1
• 238000001947 vapour-phase growth Methods 0.000 description 1
• XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1