CA1214381A - Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde - Google Patents

Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde

Info

Publication number
CA1214381A
CA1214381A CA000432839A CA432839A CA1214381A CA 1214381 A CA1214381 A CA 1214381A CA 000432839 A CA000432839 A CA 000432839A CA 432839 A CA432839 A CA 432839A CA 1214381 A CA1214381 A CA 1214381A
Authority
CA
Canada
Prior art keywords
gaas
range
resistivity
wafers
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000432839A
Other languages
English (en)
Inventor
Roelof P. Bult
Ted E. Schroeder
James G. Needham
Original Assignee
Teck Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teck Metals Ltd filed Critical Teck Metals Ltd
Priority to CA000432839A priority Critical patent/CA1214381A/fr
Priority to GB08418095A priority patent/GB2143745B/en
Priority to DE19843426250 priority patent/DE3426250A1/de
Priority to JP59148690A priority patent/JPS6071600A/ja
Priority to FR8411593A priority patent/FR2549500A1/fr
Application granted granted Critical
Publication of CA1214381A publication Critical patent/CA1214381A/fr
Priority to HK183/88A priority patent/HK18388A/xx
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA000432839A 1983-07-20 1983-07-20 Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde Expired CA1214381A (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CA000432839A CA1214381A (fr) 1983-07-20 1983-07-20 Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde
GB08418095A GB2143745B (en) 1983-07-20 1984-07-16 Growing semi conductor crystals
DE19843426250 DE3426250A1 (de) 1983-07-20 1984-07-17 Verfahren zur herstellung von halbisolierendem einkristall-gaas
JP59148690A JPS6071600A (ja) 1983-07-20 1984-07-19 酸化ホウ素封入剤を用いるガリウムヒ素結晶の成長方法
FR8411593A FR2549500A1 (fr) 1983-07-20 1984-07-20 Procede de preparation de monocristaux semi-isolants de gaas
HK183/88A HK18388A (en) 1983-07-20 1988-03-10 Method of growing gallium arsenide crystals using boron oxide encapsulant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000432839A CA1214381A (fr) 1983-07-20 1983-07-20 Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde

Publications (1)

Publication Number Publication Date
CA1214381A true CA1214381A (fr) 1986-11-25

Family

ID=4125719

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000432839A Expired CA1214381A (fr) 1983-07-20 1983-07-20 Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde

Country Status (6)

Country Link
JP (1) JPS6071600A (fr)
CA (1) CA1214381A (fr)
DE (1) DE3426250A1 (fr)
FR (1) FR2549500A1 (fr)
GB (1) GB2143745B (fr)
HK (1) HK18388A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61178497A (ja) * 1985-02-04 1986-08-11 Mitsubishi Monsanto Chem Co 低転位密度ひ化ガリウム単結晶の成長方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3551116A (en) * 1968-06-04 1970-12-29 Ibm Process for preparing low resistivity high purity gallium arsenide
JPS5815095A (ja) * 1981-07-16 1983-01-28 Toshiba Corp 単結晶の製造方法
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
JPS58181799A (ja) * 1982-04-16 1983-10-24 Nippon Telegr & Teleph Corp <Ntt> 硼素を添加したＧａＡｓ単結晶の製造方法

Also Published As

Publication number Publication date
DE3426250A1 (de) 1985-01-31
HK18388A (en) 1988-03-18
GB2143745B (en) 1987-01-21
JPS6071600A (ja) 1985-04-23
GB8418095D0 (en) 1984-08-22
GB2143745A (en) 1985-02-20
FR2549500A1 (fr) 1985-01-25

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