CA1273227A - Dispositif semiconducteur a diaphragme a fentes - Google Patents

Dispositif semiconducteur a diaphragme a fentes

Info

Publication number: CA1273227A
Authority: CA; Canada
Prior art keywords: diaphragm; thin film; semiconductor body; depression; heater
Prior art date: 1984-10-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

CA000491906A

Other languages

English (en)

Inventor

Philip J. Bohrer

Robert G. Johnson

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Honeywell Inc

Original Assignee

Honeywell Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-10-01

Filing date

1985-09-30

Publication date

1990-08-28

1985-09-30 Application filed by Honeywell Inc filed Critical Honeywell Inc

1990-08-28 Application granted granted Critical

1990-08-28 Publication of CA1273227A publication Critical patent/CA1273227A/fr

2007-08-28 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 109
239000010409 thin film Substances 0.000 claims abstract description 73
239000000463 material Substances 0.000 claims abstract description 46
230000003068 static effect Effects 0.000 claims abstract description 24
238000004519 manufacturing process Methods 0.000 claims abstract description 15
239000003989 dielectric material Substances 0.000 claims description 33
229910052581 Si3N4 Inorganic materials 0.000 claims description 28
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
229910000889 permalloy Inorganic materials 0.000 claims description 24
229910052710 silicon Inorganic materials 0.000 claims description 21
239000010703 silicon Substances 0.000 claims description 21
238000000034 method Methods 0.000 claims description 20
238000000926 separation method Methods 0.000 claims description 7
230000002463 transducing effect Effects 0.000 claims 5
230000007704 transition Effects 0.000 claims 4
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
239000003570 air Substances 0.000 description 12
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
238000005530 etching Methods 0.000 description 5
238000011144 upstream manufacturing Methods 0.000 description 4
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
239000012080 ambient air Substances 0.000 description 3
239000010408 film Substances 0.000 description 3
229910052742 iron Inorganic materials 0.000 description 3
229910052759 nickel Inorganic materials 0.000 description 3
239000000203 mixture Substances 0.000 description 2
150000004767 nitrides Chemical class 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 1
239000002131 composite material Substances 0.000 description 1
239000004020 conductor Substances 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000009413 insulation Methods 0.000 description 1
230000010354 integration Effects 0.000 description 1
UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
238000012544 monitoring process Methods 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
230000035515 penetration Effects 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
239000000523 sample Substances 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
239000000758 substrate Substances 0.000 description 1

Landscapes

Measuring Volume Flow (AREA)

CA000491906A 1984-10-01 1985-09-30 Dispositif semiconducteur a diaphragme a fentes Expired - Lifetime CA1273227A (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US65630184A	1984-10-01	1984-10-01
US656,301		1984-10-01

Publications (1)

Publication Number	Publication Date
CA1273227A true CA1273227A (fr)	1990-08-28

Family

ID=24632479

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000491906A Expired - Lifetime CA1273227A (fr)	1984-10-01	1985-09-30	Dispositif semiconducteur a diaphragme a fentes

Country Status (1)

Country	Link
CA (1)	CA1273227A (fr)

1985
- 1985-09-30 CA CA000491906A patent/CA1273227A/fr not_active Expired - Lifetime

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Legal Events

Date	Code	Title	Description
2007-08-28	MKEX	Expiry