CA1292965C - Adhesion de metal a un substrat organique par irradiation a faible energie - Google Patents

Adhesion de metal a un substrat organique par irradiation a faible energie

Info

Publication number: CA1292965C
Authority: CA; Canada
Prior art keywords: substrate; metal; polymer; particles; copper
Prior art date: 1986-04-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

CA000507433A

Other languages

English (en)

Inventor

Joachim Gerhard Clabes

Peter Otto Hahn

Paul Siu-Chung Ho

Haralambos Lefakis

Gary Wayne Rubloff

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-04-24

Filing date

1986-04-24

Publication date

1991-12-10

1986-04-24 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1986-04-24 Priority to CA000507433A priority Critical patent/CA1292965C/fr

1991-12-10 Application granted granted Critical

1991-12-10 Publication of CA1292965C publication Critical patent/CA1292965C/fr

2008-12-10 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000000758 substrate Substances 0.000 title claims abstract description 111
239000002184 metal Substances 0.000 title claims abstract description 48
229910052751 metal Inorganic materials 0.000 title claims abstract description 48
150000002500 ions Chemical class 0.000 claims abstract description 60
238000000034 method Methods 0.000 claims abstract description 53
239000002245 particle Substances 0.000 claims abstract description 43
238000001465 metallisation Methods 0.000 claims abstract description 20
229920001721 polyimide Polymers 0.000 claims description 30
239000004642 Polyimide Substances 0.000 claims description 28
239000010949 copper Substances 0.000 claims description 24
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
229910052802 copper Inorganic materials 0.000 claims description 20
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
238000000151 deposition Methods 0.000 claims description 16
239000001301 oxygen Substances 0.000 claims description 14
229910052760 oxygen Inorganic materials 0.000 claims description 14
229920000642 polymer Polymers 0.000 claims description 14
230000008021 deposition Effects 0.000 claims description 13
230000002708 enhancing effect Effects 0.000 claims description 13
229910052757 nitrogen Inorganic materials 0.000 claims description 13
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
230000004907 flux Effects 0.000 claims description 9
-1 polytetrafluorethylene Polymers 0.000 claims description 9
238000004544 sputter deposition Methods 0.000 claims description 7
238000001704 evaporation Methods 0.000 claims description 6
239000004593 Epoxy Substances 0.000 claims description 3
125000003700 epoxy group Chemical group 0.000 claims description 3
239000004033 plastic Substances 0.000 claims description 3
229920003023 plastic Polymers 0.000 claims description 3
229920000647 polyepoxide Polymers 0.000 claims description 3
229920000728 polyester Polymers 0.000 claims description 3
229910052782 aluminium Inorganic materials 0.000 claims description 2
229910052804 chromium Inorganic materials 0.000 claims description 2
229910052763 palladium Inorganic materials 0.000 claims description 2
229910052697 platinum Inorganic materials 0.000 claims description 2
229910052703 rhodium Inorganic materials 0.000 claims description 2
229910052719 titanium Inorganic materials 0.000 claims description 2
229910052721 tungsten Inorganic materials 0.000 claims description 2
230000001678 irradiating effect Effects 0.000 claims 3
239000012808 vapor phase Substances 0.000 claims 2
230000009477 glass transition Effects 0.000 claims 1
229910052750 molybdenum Inorganic materials 0.000 claims 1
229910052759 nickel Inorganic materials 0.000 claims 1
229920001343 polytetrafluoroethylene Polymers 0.000 claims 1
238000011282 treatment Methods 0.000 abstract description 5
238000010884 ion-beam technique Methods 0.000 description 17
239000000126 substance Substances 0.000 description 10
239000010410 layer Substances 0.000 description 7
150000002739 metals Chemical class 0.000 description 7
238000012545 processing Methods 0.000 description 7
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
238000001228 spectrum Methods 0.000 description 6
230000008020 evaporation Effects 0.000 description 5
239000007789 gas Substances 0.000 description 5
238000010849 ion bombardment Methods 0.000 description 5
230000008859 change Effects 0.000 description 4
238000011109 contamination Methods 0.000 description 4
230000000694 effects Effects 0.000 description 4
238000011065 in-situ storage Methods 0.000 description 4
239000000463 material Substances 0.000 description 4
230000007246 mechanism Effects 0.000 description 4
230000008569 process Effects 0.000 description 4
206010059837 Adhesion Diseases 0.000 description 3
230000004075 alteration Effects 0.000 description 3
238000000137 annealing Methods 0.000 description 3
229910052786 argon Inorganic materials 0.000 description 3
230000000875 corresponding effect Effects 0.000 description 3
238000002203 pretreatment Methods 0.000 description 3
230000005855 radiation Effects 0.000 description 3
TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
229920002799 BoPET Polymers 0.000 description 2
239000005041 Mylar™ Substances 0.000 description 2
230000004913 activation Effects 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
238000010894 electron beam technology Methods 0.000 description 2
229910052731 fluorine Inorganic materials 0.000 description 2
229910052734 helium Inorganic materials 0.000 description 2
239000001307 helium Substances 0.000 description 2
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
238000009304 pastoral farming Methods 0.000 description 2
238000004838 photoelectron emission spectroscopy Methods 0.000 description 2
238000009832 plasma treatment Methods 0.000 description 2
229920000307 polymer substrate Polymers 0.000 description 2
238000002360 preparation method Methods 0.000 description 2
229910052717 sulfur Inorganic materials 0.000 description 2
239000002344 surface layer Substances 0.000 description 2
238000012546 transfer Methods 0.000 description 2
238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 2
235000008733 Citrus aurantifolia Nutrition 0.000 description 1
XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
208000037656 Respiratory Sounds Diseases 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
239000004809 Teflon Substances 0.000 description 1
229920006362 Teflon® Polymers 0.000 description 1
235000011941 Tilia x europaea Nutrition 0.000 description 1
239000003570 air Substances 0.000 description 1
238000013459 approach Methods 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
229910052729 chemical element Inorganic materials 0.000 description 1
231100000481 chemical toxicant Toxicity 0.000 description 1
238000010954 commercial manufacturing process Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
230000003750 conditioning effect Effects 0.000 description 1
230000002596 correlated effect Effects 0.000 description 1
238000001035 drying Methods 0.000 description 1
238000007772 electroless plating Methods 0.000 description 1
238000000313 electron-beam-induced deposition Methods 0.000 description 1
150000002148 esters Chemical class 0.000 description 1
238000005530 etching Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
230000006872 improvement Effects 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
239000012212 insulator Substances 0.000 description 1
229910052743 krypton Inorganic materials 0.000 description 1
DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
238000003475 lamination Methods 0.000 description 1
239000004571 lime Substances 0.000 description 1
238000001883 metal evaporation Methods 0.000 description 1
238000002156 mixing Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052754 neon Inorganic materials 0.000 description 1
GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
239000011368 organic material Substances 0.000 description 1
229920000620 organic polymer Polymers 0.000 description 1
238000004806 packaging method and process Methods 0.000 description 1
238000002294 plasma sputter deposition Methods 0.000 description 1
239000002861 polymer material Substances 0.000 description 1
229910052704 radon Inorganic materials 0.000 description 1
SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
206010037833 rales Diseases 0.000 description 1
230000008707 rearrangement Effects 0.000 description 1
238000011160 research Methods 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
238000005211 surface analysis Methods 0.000 description 1
238000012360 testing method Methods 0.000 description 1
ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
231100000331 toxic Toxicity 0.000 description 1
230000002588 toxic effect Effects 0.000 description 1
239000003440 toxic substance Substances 0.000 description 1
229910052724 xenon Inorganic materials 0.000 description 1
FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1

Landscapes

Physical Vapour Deposition (AREA)
Treatments Of Macromolecular Shaped Articles (AREA)

CA000507433A 1986-04-24 1986-04-24 Adhesion de metal a un substrat organique par irradiation a faible energie Expired - Lifetime CA1292965C (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA000507433A CA1292965C (fr)	1986-04-24	1986-04-24	Adhesion de metal a un substrat organique par irradiation a faible energie

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CA000507433A CA1292965C (fr)	1986-04-24	1986-04-24	Adhesion de metal a un substrat organique par irradiation a faible energie

Publications (1)

Publication Number	Publication Date
CA1292965C true CA1292965C (fr)	1991-12-10

Family

ID=4132954

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000507433A Expired - Lifetime CA1292965C (fr)	1986-04-24	1986-04-24	Adhesion de metal a un substrat organique par irradiation a faible energie

Country Status (1)

Country	Link
CA (1)	CA1292965C (fr)

1986
- 1986-04-24 CA CA000507433A patent/CA1292965C/fr not_active Expired - Lifetime

Legal Events

Date	Code	Title	Description
2002-12-10	MKLA	Lapsed

Publication	Publication Date	Title
US4886681A (en)	1989-12-12	Metal-polymer adhesion by low energy bombardment
JP2597352B2 (ja)	1997-04-02	金属−有機基板間の接着力を改善する方法
Mattox	2002	Physical vapor deposition (PVD) processes
US4657774A (en)	1987-04-14	Method for thin film formation
US4683149A (en)	1987-07-28	Film forming process
US4457972A (en)	1984-07-03	Enhanced adhesion by high energy bombardment
Gamo et al.	1986	Maskless ion beam assisted deposition of W and Ta films
JP3041133B2 (ja)	2000-05-15	イオン化蒸着装置
CA1292965C (fr)	1991-12-10	Adhesion de metal a un substrat organique par irradiation a faible energie
US6162512A (en)	2000-12-19	Process for modifying surfaces of nitride, and nitride having surfaces modified thereby
JPH04318168A (ja)	1992-11-09	イオン複合ｃｖｄ法及びその装置
Chapman et al.	1969	Condensation of high-energy atomic beams
US6162513A (en)	2000-12-19	Method for modifying metal surface
US5496772A (en)	1996-03-05	Method of manufacturing film carrier type substrate
JPS6176662A (ja)	1986-04-19	薄膜形成方法および装置
Hanabusa et al.	1995	Deposition of diamond-like carbon films by excimer lasers using frozen acetylene
JPH04346651A (ja)	1992-12-02	メタライジング法
JPH01168857A (ja)	1989-07-04	窒化チタン膜の形成方法
Mattox	1990	The application of plasmas to thin film deposition processes
Yamanishi et al.	1986	Applications of ionized cluster beam to anti-reflection coating of transmission windows
Budinavičius et al.	1989	Simultaneous ion implantation and deposition
RU2099438C1 (ru)	1997-12-20	Способ получения оптического покрытия из фторида магния
JPH02259063A (ja)	1990-10-19	金属膜生成方法
JPH05193916A (ja)	1993-08-03	窒化チタン薄膜
Ruckman et al.	1992	Ion and electron beam processing of condensed molecular solids to form thin films