CA1301035C - Methode pour obtenir des semiconducteurs composities par croissance epitaxiale - Google Patents

Methode pour obtenir des semiconducteurs composities par croissance epitaxiale

Info

Publication number: CA1301035C
Authority: CA; Canada
Prior art keywords: substrate; compound semiconductor; accordance; semiconductor material; single crystal
Prior art date: 1987-06-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CA000541726A

Other languages

English (en)

Inventor

Shambhu K. Shastry

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Verizon Laboratories Inc

Original Assignee

GTE Laboratories Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-06-08

Filing date

1987-07-09

Publication date

1992-05-19

1987-06-08 Priority claimed from US07/059,441 external-priority patent/US4891091A/en

1987-07-09 Application filed by GTE Laboratories Inc filed Critical GTE Laboratories Inc

1992-05-19 Application granted granted Critical

1992-05-19 Publication of CA1301035C publication Critical patent/CA1301035C/fr

2009-05-19 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

239000000463 material Substances 0.000 title claims abstract description 53
239000004065 semiconductor Substances 0.000 title claims abstract description 47
238000000034 method Methods 0.000 title claims abstract description 42
150000001875 compounds Chemical class 0.000 title claims abstract description 40
239000000758 substrate Substances 0.000 claims abstract description 72
229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 38
239000011734 sodium Substances 0.000 claims abstract description 29
229910001415 sodium ion Inorganic materials 0.000 claims abstract description 26
239000013078 crystal Substances 0.000 claims abstract description 25
229910052708 sodium Inorganic materials 0.000 claims abstract description 22
DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 17
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 37
RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 7
239000000470 constituent Substances 0.000 claims description 5
238000010438 heat treatment Methods 0.000 claims description 5
239000011810 insulating material Substances 0.000 claims description 4
RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 4
229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
239000012808 vapor phase Substances 0.000 claims description 3
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
230000008021 deposition Effects 0.000 claims 8
239000006193 liquid solution Substances 0.000 claims 4
229910052593 corundum Inorganic materials 0.000 claims 1
229910001845 yogo sapphire Inorganic materials 0.000 claims 1
238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 10
238000004140 cleaning Methods 0.000 abstract description 4
239000010410 layer Substances 0.000 description 21
229910052710 silicon Inorganic materials 0.000 description 19
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
239000010703 silicon Substances 0.000 description 17
FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 8
239000001257 hydrogen Substances 0.000 description 8
229910052739 hydrogen Inorganic materials 0.000 description 8
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
-1 for example Substances 0.000 description 5
229910052594 sapphire Inorganic materials 0.000 description 5
239000010980 sapphire Substances 0.000 description 5
230000015572 biosynthetic process Effects 0.000 description 4
239000011780 sodium chloride Substances 0.000 description 4
239000011775 sodium fluoride Substances 0.000 description 4
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
229910052785 arsenic Inorganic materials 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
229910000070 arsenic hydride Inorganic materials 0.000 description 2
229910052790 beryllium Inorganic materials 0.000 description 2
ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
229910002804 graphite Inorganic materials 0.000 description 2
239000010439 graphite Substances 0.000 description 2
239000012535 impurity Substances 0.000 description 2
229910052749 magnesium Inorganic materials 0.000 description 2
239000011777 magnesium Substances 0.000 description 2
230000006911 nucleation Effects 0.000 description 2
238000010899 nucleation Methods 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
238000001004 secondary ion mass spectrometry Methods 0.000 description 2
229910000077 silane Inorganic materials 0.000 description 2
239000002356 single layer Substances 0.000 description 2
PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
241000234282 Allium Species 0.000 description 1
229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
229910000673 Indium arsenide Inorganic materials 0.000 description 1
GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
239000005864 Sulphur Substances 0.000 description 1
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
238000009825 accumulation Methods 0.000 description 1
125000000129 anionic group Chemical group 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
229910052793 cadmium Inorganic materials 0.000 description 1
BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
239000012159 carrier gas Substances 0.000 description 1
238000012512 characterization method Methods 0.000 description 1
239000003153 chemical reaction reagent Substances 0.000 description 1
238000001816 cooling Methods 0.000 description 1
230000007423 decrease Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
239000008367 deionised water Substances 0.000 description 1
230000001627 detrimental effect Effects 0.000 description 1
238000009826 distribution Methods 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
230000006698 induction Effects 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
230000007935 neutral effect Effects 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
239000010453 quartz Substances 0.000 description 1
229910052711 selenium Inorganic materials 0.000 description 1
239000011669 selenium Substances 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
229910052714 tellurium Inorganic materials 0.000 description 1
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
238000000927 vapour-phase epitaxy Methods 0.000 description 1
235000012431 wafers Nutrition 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1
239000011701 zinc Substances 0.000 description 1

CA000541726A 1987-06-08 1987-07-09 Methode pour obtenir des semiconducteurs composities par croissance epitaxiale Expired - Fee Related CA1301035C (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US07/059,441 US4891091A (en)	1986-07-14	1987-06-08	Method of epitaxially growing compound semiconductor materials
US059,441		1987-06-08

Publications (1)

Publication Number	Publication Date
CA1301035C true CA1301035C (fr)	1992-05-19

Family

ID=22022972

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000541726A Expired - Fee Related CA1301035C (fr)	1987-06-08	1987-07-09	Methode pour obtenir des semiconducteurs composities par croissance epitaxiale

Country Status (1)

Country	Link
CA (1)	CA1301035C (fr)

1987
- 1987-07-09 CA CA000541726A patent/CA1301035C/fr not_active Expired - Fee Related

Legal Events

Date	Code	Title	Description
1994-11-19	MKLA	Lapsed

Publication	Publication Date	Title
US4891091A (en)	1990-01-02	Method of epitaxially growing compound semiconductor materials
EP0331467B1 (fr)	1994-09-14	Méthode pour former une couche mince semi-conductrice
JP3093904B2 (ja)	2000-10-03	化合物半導体結晶の成長方法
EP0430280B1 (fr)	2004-02-25	Dépôt sélectif et non sélectif de Si1-x Gex sur un substrat de Si partiellement masqué par SiO2
US9644287B2 (en)	2017-05-09	Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
US5019529A (en)	1991-05-28	Heteroepitaxial growth method
CA2051154C (fr)	2000-12-12	Methode de fabrication de composants electroniques, electro-optiques et optiques
US7666799B2 (en)	2010-02-23	Epitaxial growth of relaxed silicon germanium layers
US5834362A (en)	1998-11-10	Method of making a device having a heteroepitaxial substrate
EP0159252B1 (fr)	1993-06-02	Procédé pour la fabrication de dispositifs semi-conducteurs utilisant des techniques de silicium-sur-isolant
CA1297390C (fr)	1992-03-17	Methode pour faire croitre de l'arseniure de gallium sur du silicium par epitaxie
US9644288B2 (en)	2017-05-09	Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
EP1214735A1 (fr)	2002-06-19	Procede de production de couches de silicium-germanium decontractees
Ghosh et al.	1984	Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy
US5210052A (en)	1993-05-11	Method for fabricating a semiconductor substrate
US4421576A (en)	1983-12-20	Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
EP0241204B1 (fr)	1996-08-28	Méthode pour former une couche cristalline déposée
Yutani et al.	1997	Hybrid MBE growth and mobility limiting factors of n-channelSiSiGe modulation-doped systems
CA1301035C (fr)	1992-05-19	Methode pour obtenir des semiconducteurs composities par croissance epitaxiale
EP0407233B1 (fr)	1996-03-20	Méthode pour fabriquer un substrat semi-conducteur
Ueda et al.	1988	Heteroepitaxy of InGaAs on GaAs substrate with InAlAs intermediate layer
Krost et al.	1994	Optical and crystallographic properties of high perfection InP grown on Si (111)
JPH0822800B2 (ja)	1996-03-06	▲ｉｉｉ▼―ｖ族化合物半導体薄膜の形成方法
KR960004904B1 (ko)	1996-04-17	다공성 실리콘기판위에 갈륨비소를 성장하는 방법
JPS5982744A (ja)	1984-05-12	Ｓｏｓ基板の製造法