CA1297390C - Methode pour faire croitre de l'arseniure de gallium sur du silicium par epitaxie - Google Patents

Methode pour faire croitre de l'arseniure de gallium sur du silicium par epitaxie

Info

Publication number
CA1297390C
CA1297390C CA000541724A CA541724A CA1297390C CA 1297390 C CA1297390 C CA 1297390C CA 000541724 A CA000541724 A CA 000541724A CA 541724 A CA541724 A CA 541724A CA 1297390 C CA1297390 C CA 1297390C
Authority
CA
Canada
Prior art keywords
vapor
gallium arsenide
temperature
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA000541724A
Other languages
English (en)
Inventor
Shambhu K. Shastry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Verizon Laboratories Inc
Original Assignee
GTE Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTE Laboratories Inc filed Critical GTE Laboratories Inc
Application granted granted Critical
Publication of CA1297390C publication Critical patent/CA1297390C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
CA000541724A 1986-07-14 1987-07-09 Methode pour faire croitre de l'arseniure de gallium sur du silicium par epitaxie Expired - Fee Related CA1297390C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/885,343 US4699688A (en) 1986-07-14 1986-07-14 Method of epitaxially growing gallium arsenide on silicon
US885,343 1986-07-14

Publications (1)

Publication Number Publication Date
CA1297390C true CA1297390C (fr) 1992-03-17

Family

ID=25386691

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000541724A Expired - Fee Related CA1297390C (fr) 1986-07-14 1987-07-09 Methode pour faire croitre de l'arseniure de gallium sur du silicium par epitaxie

Country Status (4)

Country Link
US (1) US4699688A (fr)
EP (1) EP0253611A3 (fr)
JP (1) JPS6329928A (fr)
CA (1) CA1297390C (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294286A (en) * 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
GB2162207B (en) 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
US4869776A (en) * 1986-07-29 1989-09-26 Sharp Kabushiki Kaisha Method for the growth of a compound semiconductor crystal
US5578521A (en) * 1986-11-20 1996-11-26 Nippondenso Co., Ltd. Semiconductor device with vaporphase grown epitaxial
US5081062A (en) * 1987-08-27 1992-01-14 Prahalad Vasudev Monolithic integration of silicon on insulator and gallium arsenide semiconductor technologies
US4900372A (en) * 1987-11-13 1990-02-13 Kopin Corporation III-V on Si heterostructure using a thermal strain layer
US4835116A (en) * 1987-11-13 1989-05-30 Kopin Corporation Annealing method for III-V deposition
US4910167A (en) * 1987-11-13 1990-03-20 Kopin Corporation III-V Semiconductor growth initiation on silicon using TMG and TEG
US4952527A (en) * 1988-02-19 1990-08-28 Massachusetts Institute Of Technology Method of making buffer layers for III-V devices using solid phase epitaxy
JP2691721B2 (ja) * 1988-03-04 1997-12-17 富士通株式会社 半導体薄膜の製造方法
JPH01289108A (ja) * 1988-05-17 1989-11-21 Fujitsu Ltd ヘテロエピタキシャル成長方法
EP0365875B1 (fr) * 1988-10-28 1995-08-09 Texas Instruments Incorporated Recuit sous encapsulant
US5141569A (en) * 1988-12-22 1992-08-25 Ford Microelectronics Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate
US5141893A (en) * 1988-12-22 1992-08-25 Ford Microelectronics Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate
US5456206A (en) * 1994-12-07 1995-10-10 Electronics And Telecommunications Research Institute Method for two-dimensional epitaxial growth of III-V compound semiconductors
US6010937A (en) * 1995-09-05 2000-01-04 Spire Corporation Reduction of dislocations in a heteroepitaxial semiconductor structure
GB2433648A (en) * 2005-12-21 2007-06-27 Durham Scient Crystals Ltd Radiation detector formed by deposition of bulk semiconductor crystal layers
JP5662001B2 (ja) * 2005-12-21 2015-01-28 クロメック リミテッド 半導体デバイス及びその製造方法
GB2433447A (en) * 2005-12-21 2007-06-27 Durham Scient Crystals Ltd Bulk single crystal material and method of growth
DE102011016366B4 (de) * 2011-04-07 2018-09-06 Nasp Iii/V Gmbh III/V-Si-Template, dessen Verwendung und Verfahren zu dessen Herstellung
US9595438B2 (en) 2011-09-12 2017-03-14 Nasp Iii/V Gmbh Method for producing a III/V Si template
CN105023836B (zh) * 2014-04-25 2017-12-05 国家电网公司 一种功率器件的背面buffer层制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
DE2021345A1 (de) * 1970-04-30 1972-01-13 Siemens Ag Verfahren zum Herstellen von sauerstoffarmen Galliumarsenid unter Verwendung von Silicium oder Germanium als Dotierstoff
US4062706A (en) * 1976-04-12 1977-12-13 Robert Arthur Ruehrwein Process for III-V compound epitaxial crystals utilizing inert carrier gas
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
US4407694A (en) * 1981-06-22 1983-10-04 Hughes Aircraft Company Multi-range doping of epitaxial III-V layers from a single source
JPS6012724A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 化合物半導体の成長方法
US4504331A (en) * 1983-12-08 1985-03-12 International Business Machines Corporation Silicon dopant source in intermetallic semiconductor growth operations
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon

Also Published As

Publication number Publication date
EP0253611A3 (fr) 1988-12-14
JPS6329928A (ja) 1988-02-08
US4699688A (en) 1987-10-13
EP0253611A2 (fr) 1988-01-20

Similar Documents

Publication Publication Date Title
CA1297390C (fr) Methode pour faire croitre de l'arseniure de gallium sur du silicium par epitaxie
US5463978A (en) Compound semiconductor and controlled doping thereof
CA2231625C (fr) Substrat semiconducteur constitue d'une couche d'un compose semiconducteur, procede de fabrication connexe, et dispositif electronique fabrique sur ce substrat semiconducteur
US4876219A (en) Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers
EP1655766B1 (fr) Substrat de croissance de semi-conducteur a base de nitrure
US4891091A (en) Method of epitaxially growing compound semiconductor materials
US6372981B1 (en) Semiconductor substrate, solar cell using same, and fabrication methods thereof
JPH01289108A (ja) ヘテロエピタキシャル成長方法
US5141893A (en) Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate
JPH07176485A (ja) 基板上にＧｅを堆積させる方法および半導体デバイスの製造方法
CN102925968A (zh) 一种氮化物单晶薄膜的应变调控方法
US5107317A (en) Semiconductor device with first and second buffer layers
JP3542491B2 (ja) 化合物半導体層を有する半導体基板とその作製方法及び該半導体基板に作製された電子デバイス
US4925810A (en) Compound semiconductor device and a method of manufacturing the same
JPH03171617A (ja) シリコン基板上への３―５族化合物半導体のエピタキシャル成長方法
JP3508356B2 (ja) 半導体結晶成長方法及び半導体薄膜
US5549749A (en) Substrate with a compound semiconductor surface layer and method for preparing the same
Shastry et al. Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si
US5141569A (en) Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate
KR102936339B1 (ko) 산화갈륨 박막 구조물, 이의 제조방법 및 이를 포함하는 포토다이오드
US5183778A (en) Method of producing a semiconductor device
Haywood et al. Growth of InAs by MOVPE using TBAs and TMIn
JP3107646U (ja) 化合物半導体エピタキシャルウエハ
Nagao et al. Crystalline film quality in reduced pressure silicon epitaxy at low temperature
JP3055158B2 (ja) 炭化珪素半導体膜の製造方法

Legal Events

Date Code Title Description
MKLA Lapsed