CA1313571C - Transistor mos a effet de champ en carbure de silicium - Google Patents

Transistor mos a effet de champ en carbure de silicium

Info

Publication number
CA1313571C
CA1313571C CA000581146A CA581146A CA1313571C CA 1313571 C CA1313571 C CA 1313571C CA 000581146 A CA000581146 A CA 000581146A CA 581146 A CA581146 A CA 581146A CA 1313571 C CA1313571 C CA 1313571C
Authority
CA
Canada
Prior art keywords
silicon carbide
drain
doped
source
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA000581146A
Other languages
English (en)
Inventor
John W. Palmour
Hua-Shuang Kong
Robert F. Davis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
Original Assignee
North Carolina State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University filed Critical North Carolina State University
Application granted granted Critical
Publication of CA1313571C publication Critical patent/CA1313571C/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
CA000581146A 1987-10-26 1988-10-25 Transistor mos a effet de champ en carbure de silicium Expired - Lifetime CA1313571C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11356487A 1987-10-26 1987-10-26
US113,564 1987-10-26

Publications (1)

Publication Number Publication Date
CA1313571C true CA1313571C (fr) 1993-02-09

Family

ID=22350162

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000581146A Expired - Lifetime CA1313571C (fr) 1987-10-26 1988-10-25 Transistor mos a effet de champ en carbure de silicium

Country Status (5)

Country Link
EP (1) EP0386085A4 (fr)
JP (1) JP2644028B2 (fr)
KR (1) KR0137966B1 (fr)
CA (1) CA1313571C (fr)
WO (1) WO1989004056A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465249A (en) * 1991-11-26 1995-11-07 Cree Research, Inc. Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
JP3146694B2 (ja) * 1992-11-12 2001-03-19 富士電機株式会社 炭化けい素ｍｏｓｆｅｔおよび炭化けい素ｍｏｓｆｅｔの製造方法
US5322802A (en) * 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
US5448081A (en) * 1993-02-22 1995-09-05 Texas Instruments Incorporated Lateral power MOSFET structure using silicon carbide
FR2707425A1 (fr) * 1993-07-09 1995-01-13 Thomson Csf Structure en matériau semiconducteur, application à la réalisation d'un transistor et procédé de réalisation.
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5385855A (en) * 1994-02-24 1995-01-31 General Electric Company Fabrication of silicon carbide integrated circuits
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
DE19712561C1 (de) * 1997-03-25 1998-04-30 Siemens Ag SiC-Halbleiteranordnung mit hoher Kanalbeweglichkeit
US5969378A (en) * 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
JP5098295B2 (ja) 2006-10-30 2012-12-12 株式会社デンソー 炭化珪素半導体装置の製造方法
CN115085714B (zh) * 2022-06-14 2026-01-09 北京大学深圳研究生院 提高SiC MOSFET抗辐射能力的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1073110B (de) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Verfahren zur Herstellung gleichrichtender oder ohmscher Anschlußkontakte an Siliziumkarbidkorpern
US3254280A (en) * 1963-05-29 1966-05-31 Westinghouse Electric Corp Silicon carbide unipolar transistor
US3577285A (en) * 1968-03-28 1971-05-04 Ibm Method for epitaxially growing silicon carbide onto a crystalline substrate
US3662458A (en) * 1969-06-20 1972-05-16 Westinghouse Electric Corp Electrical contact for silicon carbide members
US4032961A (en) * 1974-10-16 1977-06-28 General Electric Company Gate modulated bipolar transistor
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4582561A (en) * 1979-01-25 1986-04-15 Sharp Kabushiki Kaisha Method for making a silicon carbide substrate
JPS567479A (en) * 1979-06-29 1981-01-26 Toshiba Corp Field-effect type semiconductor device
DE3208638A1 (de) * 1982-03-10 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode aus siliziumkarbid
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
JP2615390B2 (ja) * 1985-10-07 1997-05-28 工業技術院長 炭化シリコン電界効果トランジスタの製造方法
JPS62136077A (ja) * 1985-12-10 1987-06-19 Nec Corp 半導体装置

Also Published As

Publication number Publication date
EP0386085A1 (fr) 1990-09-12
JPH03501670A (ja) 1991-04-11
JP2644028B2 (ja) 1997-08-25
KR0137966B1 (en) 1998-06-01
KR890702245A (ko) 1989-12-23
WO1989004056A1 (fr) 1989-05-05
EP0386085A4 (en) 1990-11-28

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