CA1322040C - Rondelle de semiconducteur epitaxial d'arseniure de gallium et sa methode de fabrication - Google Patents

Rondelle de semiconducteur epitaxial d'arseniure de gallium et sa methode de fabrication

Info

Publication number
CA1322040C
CA1322040C CA000616160A CA616160A CA1322040C CA 1322040 C CA1322040 C CA 1322040C CA 000616160 A CA000616160 A CA 000616160A CA 616160 A CA616160 A CA 616160A CA 1322040 C CA1322040 C CA 1322040C
Authority
CA
Canada
Prior art keywords
layer
gaas
gaasp
gap
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA000616160A
Other languages
English (en)
Inventor
Masayoshi Umeno
Shiro Sakai
Shinichiro Yahagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Steel Co Ltd
Nagoya Institute of Technology
Original Assignee
Daido Steel Co Ltd
Nagoya Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60195629A external-priority patent/JPS6258615A/ja
Priority claimed from JP60195628A external-priority patent/JPS6258614A/ja
Priority claimed from JP19563085A external-priority patent/JPS6258616A/ja
Priority claimed from JP60195435A external-priority patent/JPS6258690A/ja
Priority claimed from CA000517386A external-priority patent/CA1292550C/fr
Application filed by Daido Steel Co Ltd, Nagoya Institute of Technology filed Critical Daido Steel Co Ltd
Application granted granted Critical
Publication of CA1322040C publication Critical patent/CA1322040C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
CA000616160A 1985-09-03 1991-09-11 Rondelle de semiconducteur epitaxial d'arseniure de gallium et sa methode de fabrication Expired - Fee Related CA1322040C (fr)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP60195629A JPS6258615A (ja) 1985-09-03 1985-09-03 砒素化ガリウム系化合物半導体装置
JP60-195630 1985-09-03
JP60-195629 1985-09-03
JP60195628A JPS6258614A (ja) 1985-09-03 1985-09-03 砒素化ガリウムエピタキシヤルウエハ及びその製造方法
JP19563085A JPS6258616A (ja) 1985-09-03 1985-09-03 砒素化ガリウムエピタキシヤルウエハ及びその製造方法
JP60-195628 1985-09-03
JP60195435A JPS6258690A (ja) 1985-09-04 1985-09-04 砒素化ガリウム系半導体発光素子
JP60-195435 1985-09-04
CA000517386A CA1292550C (fr) 1985-09-03 1986-09-03 Plaquette d'arseniure de gallium epitaxial et methode de fabrication de cette plaquette

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CA000517386A Division CA1292550C (fr) 1985-09-03 1986-09-03 Plaquette d'arseniure de gallium epitaxial et methode de fabrication de cette plaquette

Publications (1)

Publication Number Publication Date
CA1322040C true CA1322040C (fr) 1993-09-07

Family

ID=27508253

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000616160A Expired - Fee Related CA1322040C (fr) 1985-09-03 1991-09-11 Rondelle de semiconducteur epitaxial d'arseniure de gallium et sa methode de fabrication

Country Status (1)

Country Link
CA (1) CA1322040C (fr)

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