CA1322040C - Rondelle de semiconducteur epitaxial d'arseniure de gallium et sa methode de fabrication - Google Patents

Rondelle de semiconducteur epitaxial d'arseniure de gallium et sa methode de fabrication

Info

Publication number: CA1322040C
Authority: CA; Canada
Prior art keywords: layer; gaas; gaasp; gap; substrate
Prior art date: 1985-09-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CA000616160A

Other languages

English (en)

Inventor

Masayoshi Umeno

Shiro Sakai

Shinichiro Yahagi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Daido Steel Co Ltd

Nagoya Institute of Technology NUC

Original Assignee

Daido Steel Co Ltd

Nagoya Institute of Technology NUC

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-09-03

Filing date

1991-09-11

Publication date

1993-09-07

1985-09-03 Priority claimed from JP19562885A external-priority patent/JPS6258614A/ja

1985-09-03 Priority claimed from JP19562985A external-priority patent/JPS6258615A/ja

1985-09-03 Priority claimed from JP19563085A external-priority patent/JPS6258616A/ja

1985-09-04 Priority claimed from JP60195435A external-priority patent/JPS6258690A/ja

1986-09-03 Priority claimed from CA000517386A external-priority patent/CA1292550C/fr

1991-09-11 Application filed by Daido Steel Co Ltd, Nagoya Institute of Technology NUC filed Critical Daido Steel Co Ltd

1993-09-07 Application granted granted Critical

1993-09-07 Publication of CA1322040C publication Critical patent/CA1322040C/fr

2006-09-03 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 152
239000004065 semiconductor Substances 0.000 title claims abstract description 55
238000000034 method Methods 0.000 title claims abstract description 15
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title description 109
239000000758 substrate Substances 0.000 claims abstract description 111
229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 25
238000000407 epitaxy Methods 0.000 claims description 21
238000000137 annealing Methods 0.000 claims description 3
150000001875 compounds Chemical class 0.000 abstract description 7
HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 59
229910005540 GaP Inorganic materials 0.000 description 57
235000012431 wafers Nutrition 0.000 description 37
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
229910052710 silicon Inorganic materials 0.000 description 13
239000010703 silicon Substances 0.000 description 13
XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 9
239000000463 material Substances 0.000 description 7
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 6
238000005253 cladding Methods 0.000 description 6
239000011248 coating agent Substances 0.000 description 6
238000000576 coating method Methods 0.000 description 6
229910052733 gallium Inorganic materials 0.000 description 6
238000005259 measurement Methods 0.000 description 6
238000007740 vapor deposition Methods 0.000 description 6
IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 5
238000005229 chemical vapour deposition Methods 0.000 description 5
230000000052 comparative effect Effects 0.000 description 4
239000013078 crystal Substances 0.000 description 4
239000007789 gas Substances 0.000 description 4
229920002120 photoresistant polymer Polymers 0.000 description 4
230000035945 sensitivity Effects 0.000 description 4
230000003595 spectral effect Effects 0.000 description 4
230000003746 surface roughness Effects 0.000 description 4
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
229910000070 arsenic hydride Inorganic materials 0.000 description 3
238000005336 cracking Methods 0.000 description 3
238000005530 etching Methods 0.000 description 3
229910021478 group 5 element Inorganic materials 0.000 description 3
238000010438 heat treatment Methods 0.000 description 3
238000011835 investigation Methods 0.000 description 3
230000003287 optical effect Effects 0.000 description 3
229910000073 phosphorus hydride Inorganic materials 0.000 description 3
238000012360 testing method Methods 0.000 description 3
XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
229910015363 Au—Sn Inorganic materials 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
239000001257 hydrogen Substances 0.000 description 2
229910052739 hydrogen Inorganic materials 0.000 description 2
238000011031 large-scale manufacturing process Methods 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000005424 photoluminescence Methods 0.000 description 2
238000001228 spectrum Methods 0.000 description 2
-1 GaAs compound Chemical class 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
241000700560 Molluscum contagiosum virus Species 0.000 description 1
229910052681 coesite Inorganic materials 0.000 description 1
229910052906 cristobalite Inorganic materials 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000005669 field effect Effects 0.000 description 1
150000002431 hydrogen Chemical class 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
229910052682 stishovite Inorganic materials 0.000 description 1
229910052905 tridymite Inorganic materials 0.000 description 1

Landscapes

Recrystallisation Techniques (AREA)

CA000616160A 1985-09-03 1991-09-11 Rondelle de semiconducteur epitaxial d'arseniure de gallium et sa methode de fabrication Expired - Fee Related CA1322040C (fr)

Applications Claiming Priority (9)

Application Number	Priority Date	Filing Date	Title
JP60-195628		1985-09-03
JP19562885A JPS6258614A (ja)	1985-09-03	1985-09-03	砒素化ガリウムエピタキシヤルウエハ及びその製造方法
JP19562985A JPS6258615A (ja)	1985-09-03	1985-09-03	砒素化ガリウム系化合物半導体装置
JP19563085A JPS6258616A (ja)	1985-09-03	1985-09-03	砒素化ガリウムエピタキシヤルウエハ及びその製造方法
JP60-195629		1985-09-03
JP60-195630		1985-09-03
JP60-195435		1985-09-04
JP60195435A JPS6258690A (ja)	1985-09-04	1985-09-04	砒素化ガリウム系半導体発光素子
CA000517386A CA1292550C (fr)	1985-09-03	1986-09-03	Plaquette d'arseniure de gallium epitaxial et methode de fabrication de cette plaquette

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000517386A Division CA1292550C (fr)	1985-09-03	1986-09-03	Plaquette d'arseniure de gallium epitaxial et methode de fabrication de cette plaquette

Publications (1)

Publication Number	Publication Date
CA1322040C true CA1322040C (fr)	1993-09-07

Family

ID=27508253

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000616160A Expired - Fee Related CA1322040C (fr)	1985-09-03	1991-09-11	Rondelle de semiconducteur epitaxial d'arseniure de gallium et sa methode de fabrication

Country Status (1)

Country	Link
CA (1)	CA1322040C (fr)

1991
- 1991-09-11 CA CA000616160A patent/CA1322040C/fr not_active Expired - Fee Related

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Legal Events

Date	Code	Title	Description
1999-09-07	MKLA	Lapsed