CA1333039C - Appareil de croissance epitaxiale a faisceau moleculaire - Google Patents

Appareil de croissance epitaxiale a faisceau moleculaire

Info

Publication number: CA1333039C
Authority: CA; Canada
Prior art keywords: vaporizer; vaporizers; holder; growth chamber; tray
Prior art date: 1988-03-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CA000616594A

Other languages

English (en)

Inventor

Masato Mushiage

Haruo Tanaka

Yuhji Ishida

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Rohm Co Ltd

Original Assignee

Rohm Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-03-30

Filing date

1993-03-30

Publication date

1994-11-15

1988-03-30 Priority claimed from JP1988042830U external-priority patent/JPH0527501Y2/ja

1988-03-30 Priority claimed from JP63077798A external-priority patent/JPH01249692A/ja

1988-04-08 Priority claimed from JP63087918A external-priority patent/JPH01261296A/ja

1989-03-29 Priority claimed from CA000594977A external-priority patent/CA1333038C/fr

1993-03-30 Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd

1994-11-15 Application granted granted Critical

1994-11-15 Publication of CA1333039C publication Critical patent/CA1333039C/fr

2009-03-29 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

238000001451 molecular beam epitaxy Methods 0.000 title claims abstract description 32
239000000758 substrate Substances 0.000 claims abstract description 113
239000006200 vaporizer Substances 0.000 claims abstract description 60
229910021478 group 5 element Inorganic materials 0.000 claims abstract description 24
239000000463 material Substances 0.000 claims abstract description 19
239000013078 crystal Substances 0.000 description 32
238000012546 transfer Methods 0.000 description 30
238000002360 preparation method Methods 0.000 description 27
238000010438 heat treatment Methods 0.000 description 15
238000000151 deposition Methods 0.000 description 10
230000008021 deposition Effects 0.000 description 8
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
239000012535 impurity Substances 0.000 description 6
229910001218 Gallium arsenide Inorganic materials 0.000 description 5
229910052785 arsenic Inorganic materials 0.000 description 5
238000000407 epitaxy Methods 0.000 description 5
229910052733 gallium Inorganic materials 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 4
230000000717 retained effect Effects 0.000 description 4
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 3
238000001816 cooling Methods 0.000 description 3
238000007872 degassing Methods 0.000 description 3
239000007788 liquid Substances 0.000 description 3
238000000034 method Methods 0.000 description 3
239000000203 mixture Substances 0.000 description 3
229910052757 nitrogen Inorganic materials 0.000 description 3
235000012431 wafers Nutrition 0.000 description 3
206010016173 Fall Diseases 0.000 description 2
238000013459 approach Methods 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
239000000356 contaminant Substances 0.000 description 2
239000010408 film Substances 0.000 description 2
238000012423 maintenance Methods 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
239000002245 particle Substances 0.000 description 2
230000002035 prolonged effect Effects 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
238000009834 vaporization Methods 0.000 description 2
230000008016 vaporization Effects 0.000 description 2
239000011364 vaporized material Substances 0.000 description 2
229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
229910001182 Mo alloy Inorganic materials 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
230000004913 activation Effects 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
238000000429 assembly Methods 0.000 description 1
230000000712 assembly Effects 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
238000004891 communication Methods 0.000 description 1
238000011109 contamination Methods 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
230000007257 malfunction Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
238000011160 research Methods 0.000 description 1
230000002441 reversible effect Effects 0.000 description 1
238000005096 rolling process Methods 0.000 description 1
230000035939 shock Effects 0.000 description 1
239000010409 thin film Substances 0.000 description 1
229910052718 tin Inorganic materials 0.000 description 1
238000001771 vacuum deposition Methods 0.000 description 1
239000002699 waste material Substances 0.000 description 1

Landscapes

Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

CA000616594A 1988-03-30 1993-03-30 Appareil de croissance epitaxiale a faisceau moleculaire Expired - Fee Related CA1333039C (fr)

Applications Claiming Priority (7)

Application Number	Priority Date	Filing Date	Title
JP1988042830U JPH0527501Y2 (fr)	1988-03-30	1988-03-30
JP63-77798		1988-03-30
JP63077798A JPH01249692A (ja)	1988-03-30	1988-03-30	分子線エピタキシー装置
JP63-42830		1988-03-30
JP63-87918		1988-04-08
JP63087918A JPH01261296A (ja)	1988-04-08	1988-04-08	分子線エピタキシー装置
CA000594977A CA1333038C (fr)	1988-03-30	1989-03-29	Appareil de croissance epitaxiale a faisceau moleculaire

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000594977A Division CA1333038C (fr)	1988-03-30	1989-03-29	Appareil de croissance epitaxiale a faisceau moleculaire

Publications (1)

Publication Number	Publication Date
CA1333039C true CA1333039C (fr)	1994-11-15

Family

ID=27426651

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000616594A Expired - Fee Related CA1333039C (fr)	1988-03-30	1993-03-30	Appareil de croissance epitaxiale a faisceau moleculaire

Country Status (1)

Country	Link
CA (1)	CA1333039C (fr)

1993
- 1993-03-30 CA CA000616594A patent/CA1333039C/fr not_active Expired - Fee Related

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Legal Events

Date	Code	Title	Description
2004-11-15	MKLA	Lapsed