CA2000243A1 - Mode de fabrication de pieces de silice a l'aide d'un creuset de fusion - Google Patents
Mode de fabrication de pieces de silice a l'aide d'un creuset de fusionInfo
- Publication number
- CA2000243A1 CA2000243A1 CA 2000243 CA2000243A CA2000243A1 CA 2000243 A1 CA2000243 A1 CA 2000243A1 CA 2000243 CA2000243 CA 2000243 CA 2000243 A CA2000243 A CA 2000243A CA 2000243 A1 CA2000243 A1 CA 2000243A1
- Authority
- CA
- Canada
- Prior art keywords
- meltstock
- silicon
- impurities
- crucible
- silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 80
- 239000010703 silicon Substances 0.000 title claims abstract description 80
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 66
- 239000012535 impurity Substances 0.000 claims abstract description 78
- 239000002245 particle Substances 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 230000008018 melting Effects 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 75
- 230000008569 process Effects 0.000 claims description 44
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 44
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 44
- 239000000377 silicon dioxide Substances 0.000 claims description 37
- 239000007787 solid Substances 0.000 claims description 20
- 239000007795 chemical reaction product Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 230000001464 adherent effect Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 claims description 2
- 239000000047 product Substances 0.000 claims 3
- 239000013078 crystal Substances 0.000 abstract description 64
- 239000007788 liquid Substances 0.000 abstract description 26
- 230000001133 acceleration Effects 0.000 abstract description 4
- 239000000155 melt Substances 0.000 description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 32
- 229910002804 graphite Inorganic materials 0.000 description 18
- 239000010439 graphite Substances 0.000 description 18
- 229910052799 carbon Inorganic materials 0.000 description 14
- 238000007711 solidification Methods 0.000 description 10
- 230000008023 solidification Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 238000007670 refining Methods 0.000 description 4
- 238000005204 segregation Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000002893 slag Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- -1 tricholosilane) Chemical class 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 238000002231 Czochralski process Methods 0.000 description 1
- 101150073597 DLST gene Proteins 0.000 description 1
- 101100295675 Dictyostelium discoideum odhB gene Proteins 0.000 description 1
- 241001010081 Metallus Species 0.000 description 1
- 229920004482 WACKER® Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/008—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method using centrifugal force to the charge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25513688A | 1988-10-07 | 1988-10-07 | |
| US255,136 | 1988-10-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2000243A1 true CA2000243A1 (fr) | 1990-04-07 |
Family
ID=22966994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2000243 Abandoned CA2000243A1 (fr) | 1988-10-07 | 1989-10-06 | Mode de fabrication de pieces de silice a l'aide d'un creuset de fusion |
Country Status (2)
| Country | Link |
|---|---|
| CA (1) | CA2000243A1 (fr) |
| WO (1) | WO1990003952A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5492894A (en) * | 1991-03-21 | 1996-02-20 | The Procter & Gamble Company | Compositions for treating wrinkles comprising a peptide |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8329133B2 (en) | 2008-11-03 | 2012-12-11 | Gt Crystal Systems, Llc | Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon |
| DE102009034145B4 (de) | 2009-07-20 | 2015-10-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung, Verwendung der Vorrichtung und Verfahren zur Herstellung von Ingots aus multikristallinem Silizium |
| US11441235B2 (en) * | 2018-12-07 | 2022-09-13 | Showa Denko K.K. | Crystal growing apparatus and crucible having a main body portion and a low radiation portion |
| CN111286785A (zh) * | 2018-12-07 | 2020-06-16 | 昭和电工株式会社 | 晶体生长装置以及坩埚 |
| CN110565162B (zh) * | 2019-09-23 | 2024-02-27 | 大同新成新材料股份有限公司 | 一种多晶硅用具有保温结构的生产设备及其使用方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2912321A (en) * | 1956-09-04 | 1959-11-10 | Helen E Brennan | Continuous casting and refining of material |
| US3012865A (en) * | 1957-11-25 | 1961-12-12 | Du Pont | Silicon purification process |
| US3267529A (en) * | 1961-10-04 | 1966-08-23 | Heraeus Gmbh W C | Apparatus for melting metals under high vacuum |
| US3265469A (en) * | 1964-09-21 | 1966-08-09 | Gen Electric | Crystal growing apparatus |
| US3653432A (en) * | 1970-09-01 | 1972-04-04 | Us Army | Apparatus and method for unidirectionally solidifying high temperature material |
| US3929557A (en) * | 1973-06-11 | 1975-12-30 | Us Air Force | Periodically and alternately accelerating and decelerating rotation rate of a feed crystal |
| US3898051A (en) * | 1973-12-28 | 1975-08-05 | Crystal Syst | Crystal growing |
| DE2623413C2 (de) * | 1976-05-25 | 1985-01-10 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von für Halbleiterbauelemente verwendbarem Silicium |
| US4013501A (en) * | 1976-05-27 | 1977-03-22 | Bell Telephone Laboratories, Incorporated | Growth of neodymium doped yttrium aluminum garnet crystals |
| US4094731A (en) * | 1976-06-21 | 1978-06-13 | Interlake, Inc. | Method of purifying silicon |
| US4298423A (en) * | 1976-12-16 | 1981-11-03 | Semix Incorporated | Method of purifying silicon |
| US4193975A (en) * | 1977-11-21 | 1980-03-18 | Union Carbide Corporation | Process for the production of improved refined metallurgical silicon |
| US4243471A (en) * | 1978-05-02 | 1981-01-06 | International Business Machines Corporation | Method for directional solidification of silicon |
| US4200671A (en) * | 1978-05-05 | 1980-04-29 | The Dow Chemical Company | Method for removing paint from a substrate |
| US4256530A (en) * | 1978-12-07 | 1981-03-17 | Crystal Systems Inc. | Crystal growing |
| US4247528A (en) * | 1979-04-11 | 1981-01-27 | Dow Corning Corporation | Method for producing solar-cell-grade silicon |
| US4312847A (en) * | 1979-05-24 | 1982-01-26 | Aluminum Company Of America | Silicon purification system |
| US4551196A (en) * | 1981-05-15 | 1985-11-05 | U.S. Philips Corporation | Method of growing crystalline cadmium mercury telluride and crystalline cadmium mercury telluride grown by the method |
| US4643833A (en) * | 1984-05-04 | 1987-02-17 | Siemens Aktiengesellschaft | Method for separating solid reaction products from silicon produced in an arc furnace |
| US4659423A (en) * | 1986-04-28 | 1987-04-21 | International Business Machines Corporation | Semiconductor crystal growth via variable melt rotation |
| DE3635064A1 (de) * | 1986-10-15 | 1988-04-21 | Bayer Ag | Verfahren zur raffination von silicium und derart gereinigtes silicium |
| US4793894A (en) * | 1987-03-10 | 1988-12-27 | North American Philips Corporation | Process for crystal growth from solution |
| US4840699A (en) * | 1987-06-12 | 1989-06-20 | Ghemini Technologies | Gallium arsenide crystal growth |
-
1989
- 1989-10-05 WO PCT/US1989/004468 patent/WO1990003952A1/fr not_active Ceased
- 1989-10-06 CA CA 2000243 patent/CA2000243A1/fr not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5492894A (en) * | 1991-03-21 | 1996-02-20 | The Procter & Gamble Company | Compositions for treating wrinkles comprising a peptide |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1990003952A1 (fr) | 1990-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |