CA2003134C - Dispositif quantique a semiconducteur utilisant les electron et les trous - Google Patents

Dispositif quantique a semiconducteur utilisant les electron et les trous

Info

Publication number
CA2003134C
CA2003134C CA002003134A CA2003134A CA2003134C CA 2003134 C CA2003134 C CA 2003134C CA 002003134 A CA002003134 A CA 002003134A CA 2003134 A CA2003134 A CA 2003134A CA 2003134 C CA2003134 C CA 2003134C
Authority
CA
Canada
Prior art keywords
electron
layer
layers
semiconductor layer
filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002003134A
Other languages
English (en)
Other versions
CA2003134A1 (fr
Inventor
Thomas K. Gaylord
Elias N. Glytsis
Kevin F. Brennan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Georgia Tech Research Corp
Original Assignee
Georgia Tech Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/272,175 external-priority patent/US4985737A/en
Priority claimed from US07/374,437 external-priority patent/US4970563A/en
Priority claimed from US07/374,476 external-priority patent/US4987458A/en
Application filed by Georgia Tech Research Corp filed Critical Georgia Tech Research Corp
Publication of CA2003134A1 publication Critical patent/CA2003134A1/fr
Application granted granted Critical
Publication of CA2003134C publication Critical patent/CA2003134C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
CA002003134A 1988-11-16 1989-11-16 Dispositif quantique a semiconducteur utilisant les electron et les trous Expired - Fee Related CA2003134C (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US272,175 1988-11-16
US07/272,175 US4985737A (en) 1988-11-16 1988-11-16 Solid state quantum mechanical electron and hole wave devices
US374,437 1989-06-30
US374,476 1989-06-30
US07/374,437 US4970563A (en) 1989-06-30 1989-06-30 Semiconductor quantum well electron and hole waveguides
US07/374,476 US4987458A (en) 1989-06-30 1989-06-30 Semiconductor biased superlattice tunable interference filter/emitter

Publications (2)

Publication Number Publication Date
CA2003134A1 CA2003134A1 (fr) 1990-05-16
CA2003134C true CA2003134C (fr) 1995-02-07

Family

ID=27402451

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002003134A Expired - Fee Related CA2003134C (fr) 1988-11-16 1989-11-16 Dispositif quantique a semiconducteur utilisant les electron et les trous

Country Status (4)

Country Link
EP (1) EP0444134A4 (fr)
JP (1) JPH05503608A (fr)
CA (1) CA2003134C (fr)
WO (1) WO1990005996A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3014339B2 (ja) * 1997-04-25 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
EP0954034A3 (fr) 1998-04-28 2000-01-26 Canare Electric Co., Ltd. Dispositif photorécepteur comprenant des couches à interférences d'ondes quantiques
JP3014364B2 (ja) * 1998-05-26 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
JP3442668B2 (ja) * 1998-10-23 2003-09-02 カナレ電気株式会社 量子波干渉層を有した電界効果トランジスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62211948A (ja) * 1986-03-13 1987-09-17 Fujitsu Ltd ヘテロ接合半導体装置

Also Published As

Publication number Publication date
CA2003134A1 (fr) 1990-05-16
JPH05503608A (ja) 1993-06-10
EP0444134A4 (en) 1993-03-03
EP0444134A1 (fr) 1991-09-04
WO1990005996A1 (fr) 1990-05-31

Similar Documents

Publication Publication Date Title
US11810999B2 (en) Resonant optical cavity light emitting device
Gaylord et al. Electron wave optics in semiconductors
Heiss et al. Epitaxial Bragg mirrors for the mid-infrared and their applications
JPH05218580A (ja) 電界可変型偏光光素子
Henderson et al. Ballistic electron transport in semiconductor heterostructures and its analogies in electromagnetic propagation in general dielectrics
Gaylord et al. Semiconductor superlattice interference filter design
JP2956304B2 (ja) 非線形光学素子および非線形光学用構造体
Kaneko et al. Refractive indices measurement of (GaInP) m/(AlInP) n quasi‐quaternaries and GaInP/AlInP multiple quantum wells
US4985737A (en) Solid state quantum mechanical electron and hole wave devices
US11448824B2 (en) Devices with semiconductor hyperbolic metamaterials
CA2003134C (fr) Dispositif quantique a semiconducteur utilisant les electron et les trous
US5040032A (en) Semiconductor superlattice heterostructures on non-planar substrates
US5153687A (en) Semiconductor optical functional device with parabolic wells
US4987458A (en) Semiconductor biased superlattice tunable interference filter/emitter
US4974036A (en) Semiconductor superlattice heterostructures on nonplanar substrates
Parker et al. Telecommunication wavelength confined Tamm plasmon structures containing InAs/GaAs quantum dot emitters at room temperature
US4970563A (en) Semiconductor quantum well electron and hole waveguides
US5386126A (en) Semiconductor devices based on optical transitions between quasibound energy levels
Bauer et al. Multilayered superstructures
US12181694B2 (en) Electromagnetic cavity able to support Tamm modes
Imam et al. Dipole matrix elements of semiconductor intersubband quantum structures
Messelot Terahertz Tamm cavities for light-matter coupling with graphene based materials
Imam et al. Spatially varying effective mass effects on energy level populations in semiconductor quantum devices
Heitmann Surface-and Two-Dimensional Plasmon Excitations in Microstructured Metal Films and Semiconductor Heterostructures
JP3437372B2 (ja) 半導体空間光変調器用反射多層膜

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed