CA2003134A1 - Dispositif quantique a semiconducteur utilisant les electron et les trous - Google Patents

Dispositif quantique a semiconducteur utilisant les electron et les trous

Info

Publication number
CA2003134A1
CA2003134A1 CA2003134A CA2003134A CA2003134A1 CA 2003134 A1 CA2003134 A1 CA 2003134A1 CA 2003134 A CA2003134 A CA 2003134A CA 2003134 A CA2003134 A CA 2003134A CA 2003134 A1 CA2003134 A1 CA 2003134A1
Authority
CA
Canada
Prior art keywords
electron
solid state
devices
superlattice
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2003134A
Other languages
English (en)
Other versions
CA2003134C (fr
Inventor
Thomas K. Gaylord
Elias N. Glytsis
Kevin F. Brennan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Georgia Tech Research Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/272,175 external-priority patent/US4985737A/en
Priority claimed from US07/374,437 external-priority patent/US4970563A/en
Priority claimed from US07/374,476 external-priority patent/US4987458A/en
Application filed by Individual filed Critical Individual
Publication of CA2003134A1 publication Critical patent/CA2003134A1/fr
Application granted granted Critical
Publication of CA2003134C publication Critical patent/CA2003134C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
CA002003134A 1988-11-16 1989-11-16 Dispositif quantique a semiconducteur utilisant les electron et les trous Expired - Fee Related CA2003134C (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US272,175 1988-11-16
US07/272,175 US4985737A (en) 1988-11-16 1988-11-16 Solid state quantum mechanical electron and hole wave devices
US374,437 1989-06-30
US374,476 1989-06-30
US07/374,437 US4970563A (en) 1989-06-30 1989-06-30 Semiconductor quantum well electron and hole waveguides
US07/374,476 US4987458A (en) 1989-06-30 1989-06-30 Semiconductor biased superlattice tunable interference filter/emitter

Publications (2)

Publication Number Publication Date
CA2003134A1 true CA2003134A1 (fr) 1990-05-16
CA2003134C CA2003134C (fr) 1995-02-07

Family

ID=27402451

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002003134A Expired - Fee Related CA2003134C (fr) 1988-11-16 1989-11-16 Dispositif quantique a semiconducteur utilisant les electron et les trous

Country Status (4)

Country Link
EP (1) EP0444134A4 (fr)
JP (1) JPH05503608A (fr)
CA (1) CA2003134C (fr)
WO (1) WO1990005996A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3014339B2 (ja) * 1997-04-25 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
EP0954034A3 (fr) 1998-04-28 2000-01-26 Canare Electric Co., Ltd. Dispositif photorécepteur comprenant des couches à interférences d'ondes quantiques
JP3014364B2 (ja) * 1998-05-26 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
JP3442668B2 (ja) * 1998-10-23 2003-09-02 カナレ電気株式会社 量子波干渉層を有した電界効果トランジスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62211948A (ja) * 1986-03-13 1987-09-17 Fujitsu Ltd ヘテロ接合半導体装置

Also Published As

Publication number Publication date
JPH05503608A (ja) 1993-06-10
EP0444134A4 (en) 1993-03-03
EP0444134A1 (fr) 1991-09-04
WO1990005996A1 (fr) 1990-05-31
CA2003134C (fr) 1995-02-07

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