CA2010030A1 - Methode de transfert de masques sur une resine de silicone en echelle et solution d'attaque utilisee dans cette methode - Google Patents

Methode de transfert de masques sur une resine de silicone en echelle et solution d'attaque utilisee dans cette methode

Info

Publication number
CA2010030A1
CA2010030A1 CA2010030A CA2010030A CA2010030A1 CA 2010030 A1 CA2010030 A1 CA 2010030A1 CA 2010030 A CA2010030 A CA 2010030A CA 2010030 A CA2010030 A CA 2010030A CA 2010030 A1 CA2010030 A1 CA 2010030A1
Authority
CA
Canada
Prior art keywords
ladder type
type resin
silicone ladder
resin
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2010030A
Other languages
English (en)
Other versions
CA2010030C (fr
Inventor
Hiroshi Adachi
Etsushi Adachi
Yoshiko Aiba
Osamu Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CA2010030A1 publication Critical patent/CA2010030A1/fr
Application granted granted Critical
Publication of CA2010030C publication Critical patent/CA2010030C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0041—Photosensitive materials providing an etching agent upon exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CA002010030A 1989-02-23 1990-02-14 Methode de transfert de masques sur une resine de silicone en echelle et solution d'attaque utilisee dans cette methode Expired - Fee Related CA2010030C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP44326/1989 1989-02-23
JP1044326A JP2542075B2 (ja) 1989-02-23 1989-02-23 シリコ―ンラダ―系樹脂にパタ―ンを転写する方法およびそれに用いるエッチング液

Publications (2)

Publication Number Publication Date
CA2010030A1 true CA2010030A1 (fr) 1990-08-23
CA2010030C CA2010030C (fr) 1997-01-21

Family

ID=12688379

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002010030A Expired - Fee Related CA2010030C (fr) 1989-02-23 1990-02-14 Methode de transfert de masques sur une resine de silicone en echelle et solution d'attaque utilisee dans cette methode

Country Status (6)

Country Link
US (1) US5087553A (fr)
JP (1) JP2542075B2 (fr)
KR (1) KR930003878B1 (fr)
CA (1) CA2010030C (fr)
DE (1) DE4005345C2 (fr)
GB (2) GB2228582B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2646289B2 (ja) * 1990-06-01 1997-08-27 富士写真フイルム株式会社 レジスト組成物
JP2752786B2 (ja) * 1990-11-19 1998-05-18 三菱電機株式会社 カラーフィルターの表面保護膜
JP2547944B2 (ja) * 1992-09-30 1996-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法
JP2923408B2 (ja) * 1992-12-21 1999-07-26 三菱電機株式会社 高純度シリコーンラダーポリマーの製造方法
TWI255957B (en) * 1999-03-26 2006-06-01 Hitachi Ltd Liquid crystal display device and method of manufacturing the same
KR100633655B1 (ko) 1999-12-22 2006-10-11 미쓰비시덴키 가부시키가이샤 센서 소자 및 그 제조 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348947A (en) * 1976-10-18 1978-05-02 Oki Electric Ind Co Ltd Photoethcing method for oxidized film
JPS5594955A (en) * 1979-01-12 1980-07-18 Hitachi Ltd Film-forming coating solution
EP0021818B1 (fr) * 1979-06-21 1983-10-05 Fujitsu Limited Dispositif électronique comprenant une structure d'interconnexion multicouche
JPS6046826B2 (ja) * 1979-06-21 1985-10-18 富士通株式会社 半導体装置
JPS5633827A (en) * 1979-08-29 1981-04-04 Seiko Epson Corp Photo etching method including surface treatment of substrate
JPS56125855A (en) * 1980-03-07 1981-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPS56135928A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Forming method for pattern of silicone resin
JPS57154830A (en) * 1980-10-31 1982-09-24 Fujitsu Ltd Forming method for pattern and structure of laminating
US4409319A (en) * 1981-07-15 1983-10-11 International Business Machines Corporation Electron beam exposed positive resist mask process
JPS59161827A (ja) * 1983-03-04 1984-09-12 Nippon Telegr & Teleph Corp <Ntt> 絶縁膜加工法
JPS60262150A (ja) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法
JPS6314432A (ja) * 1986-07-07 1988-01-21 Nippon Telegr & Teleph Corp <Ntt> パタン形成方法
JPH0740547B2 (ja) * 1987-03-24 1995-05-01 ウシオ電機株式会社 レジスト処理方法
JPS63301521A (ja) * 1987-06-01 1988-12-08 Nec Corp パタ−ン形成法
JPS6424424A (en) * 1987-07-21 1989-01-26 New Japan Radio Co Ltd Manufacture of semiconductor device
JP2608429B2 (ja) * 1987-11-09 1997-05-07 東レ・ダウコーニング・シリコーン株式会社 パターン形成用材料およびパターン形成方法

Also Published As

Publication number Publication date
GB2228582B (en) 1993-06-16
DE4005345C2 (de) 1995-06-29
GB9002812D0 (en) 1990-04-04
US5087553A (en) 1992-02-11
CA2010030C (fr) 1997-01-21
GB9016212D0 (en) 1990-09-05
GB2237577A (en) 1991-05-08
GB2228582A (en) 1990-08-29
KR900013576A (ko) 1990-09-06
KR930003878B1 (ko) 1993-05-14
JP2542075B2 (ja) 1996-10-09
JPH02222537A (ja) 1990-09-05
GB2237577B (en) 1992-11-04
DE4005345A1 (de) 1990-08-30

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