CA2010414A1 - Appareil d'impression directe par faisceau electronique - Google Patents
Appareil d'impression directe par faisceau electroniqueInfo
- Publication number
- CA2010414A1 CA2010414A1 CA2010414A CA2010414A CA2010414A1 CA 2010414 A1 CA2010414 A1 CA 2010414A1 CA 2010414 A CA2010414 A CA 2010414A CA 2010414 A CA2010414 A CA 2010414A CA 2010414 A1 CA2010414 A1 CA 2010414A1
- Authority
- CA
- Canada
- Prior art keywords
- electron beam
- deflection scanning
- dot
- printing pattern
- scanning data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. program control
- H01J37/3023—Program control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S347/00—Incremental printing of symbolic information
- Y10S347/90—Data processing for electrostatic recording
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Facsimile Scanning Arrangements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1102212A JPH02280315A (ja) | 1989-04-20 | 1989-04-20 | 電子ビーム直接描画装置 |
| JP1-102212 | 1989-04-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2010414A1 true CA2010414A1 (fr) | 1990-10-20 |
| CA2010414C CA2010414C (fr) | 1993-07-20 |
Family
ID=14321354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002010414A Expired - Fee Related CA2010414C (fr) | 1989-04-20 | 1990-02-20 | Appareil d'impression directe par faisceau electronique |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5005138A (fr) |
| JP (1) | JPH02280315A (fr) |
| CA (1) | CA2010414C (fr) |
| DE (1) | DE4007021A1 (fr) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR940009838B1 (ko) * | 1990-03-14 | 1994-10-17 | 후지쓰 가부시끼가이샤 | 고데이타 전송효율을 갖는 전자 빔 노광시스템 |
| US5751594A (en) * | 1993-03-16 | 1998-05-12 | Emc Corporation | Aperture control system for printed circuit board fabrication |
| US5781447A (en) * | 1993-08-13 | 1998-07-14 | Micron Eletronics, Inc. | System for recreating a printed circuit board from disjointly formatted data |
| US5909658A (en) * | 1996-06-18 | 1999-06-01 | International Business Machines Corporation | High speed electron beam lithography pattern processing system |
| JP3940310B2 (ja) * | 2002-04-04 | 2007-07-04 | 株式会社日立ハイテクノロジーズ | 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法 |
| EP1842103A2 (fr) * | 2005-01-14 | 2007-10-10 | Arradiance, Inc. | Systeme lithographique par balayage ligne par ligne synchrone |
| JP5063320B2 (ja) * | 2007-12-11 | 2012-10-31 | 株式会社ニューフレアテクノロジー | 描画装置及び描画データの変換方法 |
| JP2010028206A (ja) * | 2008-07-15 | 2010-02-04 | Canon Inc | 画像形成システム、画像形成装置、画像処理装置および画像形成方法 |
| US9341936B2 (en) | 2008-09-01 | 2016-05-17 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
| US7901850B2 (en) | 2008-09-01 | 2011-03-08 | D2S, Inc. | Method and system for design of a reticle to be manufactured using variable shaped beam lithography |
| US8039176B2 (en) | 2009-08-26 | 2011-10-18 | D2S, Inc. | Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography |
| US8057970B2 (en) | 2008-09-01 | 2011-11-15 | D2S, Inc. | Method and system for forming circular patterns on a surface |
| US7985514B2 (en) * | 2009-10-21 | 2011-07-26 | D2S, Inc. | Method for fracturing a pattern for writing with a shaped charged particle beam writing system using dragged shots |
| US8473875B2 (en) | 2010-10-13 | 2013-06-25 | D2S, Inc. | Method and system for forming high accuracy patterns using charged particle beam lithography |
| US9323140B2 (en) | 2008-09-01 | 2016-04-26 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
| US20120219886A1 (en) | 2011-02-28 | 2012-08-30 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography with variable pattern dosage |
| US9164372B2 (en) | 2009-08-26 | 2015-10-20 | D2S, Inc. | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
| US9448473B2 (en) | 2009-08-26 | 2016-09-20 | D2S, Inc. | Method for fracturing and forming a pattern using shaped beam charged particle beam lithography |
| US20120278770A1 (en) | 2011-04-26 | 2012-11-01 | D2S, Inc. | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
| US9057956B2 (en) | 2011-02-28 | 2015-06-16 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
| US9612530B2 (en) | 2011-02-28 | 2017-04-04 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
| US9034542B2 (en) | 2011-06-25 | 2015-05-19 | D2S, Inc. | Method and system for forming patterns with charged particle beam lithography |
| KR102154105B1 (ko) | 2012-04-18 | 2020-09-09 | 디2에스, 인코포레이티드 | 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템 |
| US9343267B2 (en) | 2012-04-18 | 2016-05-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
| JP6189933B2 (ja) | 2012-04-18 | 2017-08-30 | ディー・ツー・エス・インコーポレイテッドD2S, Inc. | 荷電粒子ビームリソグラフィを用いる限界寸法均一性のための方法およびシステム |
| US10312091B1 (en) * | 2015-10-13 | 2019-06-04 | Multibeam Corporation | Secure permanent integrated circuit personalization |
| US10937630B1 (en) | 2020-04-27 | 2021-03-02 | John Bennett | Modular parallel electron lithography |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3815094A (en) * | 1970-12-15 | 1974-06-04 | Micro Bit Corp | Electron beam type computer output on microfilm printer |
| US3810165A (en) * | 1971-12-28 | 1974-05-07 | Xerox Corp | Electronic display device |
| JPS5456769A (en) * | 1977-10-14 | 1979-05-08 | Cho Lsi Gijutsu Kenkyu Kumiai | Electron beam exposure device |
| JPS62154729A (ja) * | 1985-12-27 | 1987-07-09 | Hitachi Ltd | 電子線描画装置 |
| JPS6431418A (en) * | 1987-07-28 | 1989-02-01 | Toshiba Machine Co Ltd | Charged particle beam lithography equipment |
| US4870286A (en) * | 1987-07-30 | 1989-09-26 | Mitsubishi Denki Kabushiki Kaisha | Electron beam direct drawing device |
-
1989
- 1989-04-20 JP JP1102212A patent/JPH02280315A/ja active Pending
-
1990
- 1990-02-20 CA CA002010414A patent/CA2010414C/fr not_active Expired - Fee Related
- 1990-03-06 DE DE4007021A patent/DE4007021A1/de active Granted
- 1990-04-20 US US07/511,788 patent/US5005138A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5005138A (en) | 1991-04-02 |
| JPH02280315A (ja) | 1990-11-16 |
| DE4007021A1 (de) | 1990-10-25 |
| CA2010414C (fr) | 1993-07-20 |
| DE4007021C2 (fr) | 1993-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |