CA2015482A1 - Systeme optique comportant un laser a semiconducteur accordable en longueur d'onde - Google Patents

Systeme optique comportant un laser a semiconducteur accordable en longueur d'onde

Info

Publication number
CA2015482A1
CA2015482A1 CA2015482A CA2015482A CA2015482A1 CA 2015482 A1 CA2015482 A1 CA 2015482A1 CA 2015482 A CA2015482 A CA 2015482A CA 2015482 A CA2015482 A CA 2015482A CA 2015482 A1 CA2015482 A1 CA 2015482A1
Authority
CA
Canada
Prior art keywords
semiconductor laser
optical system
tunable semiconductor
system including
wavelength tunable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2015482A
Other languages
English (en)
Other versions
CA2015482C (fr
Inventor
John Edward Cunningham
Timothy Dean Harris
Erdmann Frederick Schubert
Jan Peter Van Der Ziel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of CA2015482A1 publication Critical patent/CA2015482A1/fr
Application granted granted Critical
Publication of CA2015482C publication Critical patent/CA2015482C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Light Guides In General And Applications Therefor (AREA)
  • Optical Communication System (AREA)
CA002015482A 1989-05-30 1990-04-26 Systeme optique comportant un laser a semiconducteur accordable en longueur d'onde Expired - Fee Related CA2015482C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US358,972 1989-05-30
US07/358,972 US4980892A (en) 1989-05-30 1989-05-30 Optical system including wavelength-tunable semiconductor laser

Publications (2)

Publication Number Publication Date
CA2015482A1 true CA2015482A1 (fr) 1990-11-30
CA2015482C CA2015482C (fr) 1994-03-29

Family

ID=23411784

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002015482A Expired - Fee Related CA2015482C (fr) 1989-05-30 1990-04-26 Systeme optique comportant un laser a semiconducteur accordable en longueur d'onde

Country Status (5)

Country Link
US (1) US4980892A (fr)
EP (1) EP0400880B1 (fr)
JP (1) JPH0695590B2 (fr)
CA (1) CA2015482C (fr)
DE (1) DE69023813T2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5390209A (en) * 1994-01-05 1995-02-14 At&T Corp. Article comprising a semiconductor laser that is non-degenerate with regard to polarization
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
GB2380855B (en) * 2001-10-11 2005-12-14 Marconi Caswell Ltd Tunable laser with improved suppression of auger recombination
US20050064111A1 (en) * 2003-09-23 2005-03-24 Hiller Nathan David Method for forming doping superlattices using standing electromagnetic waves
US20050215036A1 (en) * 2004-03-26 2005-09-29 Hiller Nathan D Method for forming a doping superlattice using a laser
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
JP5444248B2 (ja) * 2007-12-28 2014-03-19 アギア システムズ インコーポレーテッド デルタドープされた活性領域を有する導波路装置
US20090283746A1 (en) * 2008-05-15 2009-11-19 Palo Alto Research Center Incorporated Light-emitting devices with modulation doped active layers
EP2434594B1 (fr) * 2010-09-27 2014-05-14 Alcatel Lucent Circuit intégré photonique pour multiplexage à division de longueur d'onde
US11349569B2 (en) 2018-10-26 2022-05-31 Raytheon Company Methods and apparatus for implementing an optical transceiver using a vapor cell
US11307395B2 (en) 2019-05-23 2022-04-19 Raytheon Company Methods and apparatus for optical path length equalization in an optical cavity
EP3987687B1 (fr) 2019-06-20 2023-07-05 Raytheon Company Procédés et appareil de suivi d'objets en mouvement à l'aide d'une détection de changement de phase symétrique
EP3994808A1 (fr) 2019-07-03 2022-05-11 Raytheon Company Récepteur optique comprenant un résonateur optique rotatif, et procédé de démodulation d'un signal optique à l'aide dudit récepteur
US11199754B2 (en) 2019-07-15 2021-12-14 Raytheon Company Demodulator with optical resonator
US11431417B2 (en) * 2019-09-26 2022-08-30 Raytheon Company Methods and apparatus for reception of low photon density optical signals
CN111478772B (zh) 2020-06-22 2020-10-16 杭州趣链科技有限公司 一种流水线友好的签名和验签方法、设备及存储介质

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2664668B2 (ja) * 1986-06-17 1997-10-15 日本電信電話株式会社 半導体レーザ装置
JPS63231403A (ja) * 1987-03-11 1988-09-27 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 光導波路を有する光学装置
US4839899A (en) * 1988-03-09 1989-06-13 Xerox Corporation Wavelength tuning of multiple quantum well (MQW) heterostructure lasers

Also Published As

Publication number Publication date
CA2015482C (fr) 1994-03-29
EP0400880B1 (fr) 1995-11-29
JPH0321094A (ja) 1991-01-29
DE69023813D1 (de) 1996-01-11
JPH0695590B2 (ja) 1994-11-24
EP0400880A2 (fr) 1990-12-05
US4980892A (en) 1990-12-25
DE69023813T2 (de) 1996-04-18
EP0400880A3 (fr) 1991-09-18

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