CA2049848A1 - Reflecteurs de bragg repartis et dispositifs incorporant ces reflecteurs - Google Patents

Reflecteurs de bragg repartis et dispositifs incorporant ces reflecteurs

Info

Publication number
CA2049848A1
CA2049848A1 CA2049848A CA2049848A CA2049848A1 CA 2049848 A1 CA2049848 A1 CA 2049848A1 CA 2049848 A CA2049848 A CA 2049848A CA 2049848 A CA2049848 A CA 2049848A CA 2049848 A1 CA2049848 A1 CA 2049848A1
Authority
CA
Canada
Prior art keywords
distributed bragg
bragg reflectors
layers
devices incorporating
incorporating same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2049848A
Other languages
English (en)
Other versions
CA2049848C (fr
Inventor
Greg E. Blonder
Edwin Arthur Chandross
Seng-Tiong Ho
Samuel L. Mccall
Richart E. Slusher
Kenneth W. West
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2049848A1 publication Critical patent/CA2049848A1/fr
Application granted granted Critical
Publication of CA2049848C publication Critical patent/CA2049848C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Prostheses (AREA)
CA002049848A 1990-08-31 1991-08-26 Reflecteurs de bragg repartis et dispositifs incorporant ces reflecteurs Expired - Fee Related CA2049848C (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US57593090A 1990-08-31 1990-08-31
US575,930 1990-08-31
US590,197 1990-09-28
US07/590,197 US5158908A (en) 1990-08-31 1990-09-28 Distributed bragg reflectors and devices incorporating same

Publications (2)

Publication Number Publication Date
CA2049848A1 true CA2049848A1 (fr) 1992-03-01
CA2049848C CA2049848C (fr) 1995-12-05

Family

ID=27076829

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002049848A Expired - Fee Related CA2049848C (fr) 1990-08-31 1991-08-26 Reflecteurs de bragg repartis et dispositifs incorporant ces reflecteurs

Country Status (7)

Country Link
US (1) US5158908A (fr)
EP (1) EP0473362B1 (fr)
JP (1) JPH04234186A (fr)
KR (1) KR920004892A (fr)
CA (1) CA2049848C (fr)
DE (1) DE69124647T2 (fr)
TW (1) TW201846B (fr)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6156582A (en) * 1993-06-14 2000-12-05 Motorola, Inc. Method of fabricating top emitting ridge VCSEL with self-aligned contact and sidewall reflector
US6194240B1 (en) * 1993-12-21 2001-02-27 Lucent Technologies Inc. Method for fabrication of wavelength selective electro-optic grating for DFB/DBR lasers
US5978401A (en) * 1995-10-25 1999-11-02 Honeywell Inc. Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver
GB2311166A (en) * 1996-03-13 1997-09-17 Sharp Kk An optoelectronic semiconductor device
US5774487A (en) * 1996-10-16 1998-06-30 Honeywell Inc. Filamented multi-wavelength vertical-cavity surface emitting laser
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
US6052495A (en) * 1997-10-01 2000-04-18 Massachusetts Institute Of Technology Resonator modulators and wavelength routing switches
US6078605A (en) * 1998-02-20 2000-06-20 Massachusetts Institute Of Technology Track-changing utilizing phase response of resonators
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
WO2000050938A1 (fr) 1999-02-22 2000-08-31 Massachusetts Institute Of Technology Resonateurs optiques couples verticalement utilisant une architecture de guides d'ondes en grille croisee
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6627923B1 (en) 1999-07-12 2003-09-30 Massachusetts Institute Of Technology Resonant microcavities
AU766362B2 (en) * 1999-09-03 2003-10-16 Regents Of The University Of California, The Tunable laser source with integrated optical modulator
US6298180B1 (en) 1999-09-15 2001-10-02 Seng-Tiong Ho Photon transistors
US7103245B2 (en) 2000-07-10 2006-09-05 Massachusetts Institute Of Technology High density integrated optical chip
US6905900B1 (en) 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US6990135B2 (en) * 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
US7065124B2 (en) 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
TWI227799B (en) * 2000-12-29 2005-02-11 Honeywell Int Inc Resonant reflector for increased wavelength and polarization control
US6727520B2 (en) * 2000-12-29 2004-04-27 Honeywell International Inc. Spatially modulated reflector for an optoelectronic device
US6782027B2 (en) 2000-12-29 2004-08-24 Finisar Corporation Resonant reflector for use with optoelectronic devices
US6836501B2 (en) * 2000-12-29 2004-12-28 Finisar Corporation Resonant reflector for increased wavelength and polarization control
US6865314B1 (en) 2001-01-11 2005-03-08 Steven M. Blair Tunable optical wavelength filters and multi-level optical integrated circuits
US6606199B2 (en) 2001-10-10 2003-08-12 Honeywell International Inc. Graded thickness optical element and method of manufacture therefor
US6934427B2 (en) * 2002-03-12 2005-08-23 Enablence Holdings Llc High density integrated optical chip with low index difference waveguide functions
US6965626B2 (en) 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6813293B2 (en) 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
US6869812B1 (en) * 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7075962B2 (en) 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US7277461B2 (en) 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US6961489B2 (en) 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US7149383B2 (en) 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US7210857B2 (en) 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US6887801B2 (en) 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7031363B2 (en) 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
US20060255349A1 (en) * 2004-05-11 2006-11-16 Heng Liu High power AllnGaN based multi-chip light emitting diode
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US7829912B2 (en) 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US7545560B2 (en) * 2004-10-08 2009-06-09 Finisar Corporation AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed bragg reflector
DE102005004795B9 (de) * 2005-02-02 2012-01-19 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Konzept zur nass-chemischen Entfernung eines Opfermaterials in einer Materialstruktur
TW200828624A (en) * 2006-12-27 2008-07-01 Epistar Corp Light-emitting diode and method for manufacturing the same
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
CN115483325B (zh) * 2022-09-26 2025-06-24 武汉创维光显电子有限公司 出光控制方法及出光控制设备
CN118529811B (zh) * 2024-05-30 2024-10-25 江苏工程职业技术学院 一种适用于污水处理的激光空化装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3983509A (en) * 1975-04-25 1976-09-28 Xerox Corporation Distributed feedback diode laser
US4764246A (en) * 1985-08-06 1988-08-16 American Telephone And Telegraph Company, At&T Bell Laboratories Buried undercut mesa-like waveguide and method of making same
JPH0278232A (ja) * 1988-09-14 1990-03-19 Hitachi Ltd 半導体装置及びその製造方法
US4873696A (en) * 1988-10-31 1989-10-10 The Regents Of The University Of California Surface-emitting lasers with periodic gain and a parallel driven nipi structure

Also Published As

Publication number Publication date
EP0473362B1 (fr) 1997-02-12
JPH04234186A (ja) 1992-08-21
US5158908A (en) 1992-10-27
DE69124647D1 (de) 1997-03-27
CA2049848C (fr) 1995-12-05
TW201846B (fr) 1993-03-11
DE69124647T2 (de) 1997-09-11
KR920004892A (ko) 1992-03-28
EP0473362A2 (fr) 1992-03-04
EP0473362A3 (en) 1992-05-06

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed
MKLA Lapsed

Effective date: 20010827