CA2017303A1 - Methode permettant d'ameliorer la planeite des facettes gravees d'un miroir - Google Patents

Methode permettant d'ameliorer la planeite des facettes gravees d'un miroir

Info

Publication number
CA2017303A1
CA2017303A1 CA2017303A CA2017303A CA2017303A1 CA 2017303 A1 CA2017303 A1 CA 2017303A1 CA 2017303 A CA2017303 A CA 2017303A CA 2017303 A CA2017303 A CA 2017303A CA 2017303 A1 CA2017303 A1 CA 2017303A1
Authority
CA
Canada
Prior art keywords
flatness
improving
mirror
curvature
mirror facets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2017303A
Other languages
English (en)
Other versions
CA2017303C (fr
Inventor
Peter Leo Buchmann
Peter Vettiger
Otto Voegeli
David John Webb
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CA2017303A1 publication Critical patent/CA2017303A1/fr
Application granted granted Critical
Publication of CA2017303C publication Critical patent/CA2017303C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
CA002017303A 1989-06-16 1990-05-22 Methode permettant d'ameliorer la planeite des facettes gravees d'un miroir Expired - Fee Related CA2017303C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP89810463A EP0402556B1 (fr) 1989-06-16 1989-06-16 Méthode pour améliorer la planéité des facettes de miroir gravées
EP89810463.3 1989-06-16

Publications (2)

Publication Number Publication Date
CA2017303A1 true CA2017303A1 (fr) 1990-12-16
CA2017303C CA2017303C (fr) 1995-12-12

Family

ID=8203159

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002017303A Expired - Fee Related CA2017303C (fr) 1989-06-16 1990-05-22 Methode permettant d'ameliorer la planeite des facettes gravees d'un miroir

Country Status (5)

Country Link
US (2) US5032219A (fr)
EP (1) EP0402556B1 (fr)
JP (1) JPH07105573B2 (fr)
CA (1) CA2017303C (fr)
DE (1) DE68909779T2 (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0532816B1 (fr) * 1991-09-19 1995-08-09 International Business Machines Corporation Structure auto-alignée de guide d'onde optique à laser et sa méthode de fabrication
JPH05173046A (ja) * 1991-12-20 1993-07-13 Sony Corp 光導波路装置
FR2694099B1 (fr) * 1992-07-21 1994-12-09 Louis Menigaux Procédé pour former une structure à guide de lumière et miroir intégrés, et structure ainsi réalisée.
US5379359A (en) * 1992-09-29 1995-01-03 Eastman Kodak Company Laser diode coupling to waveguide and method of making same using substrate etching
KR0138006B1 (ko) * 1992-10-26 1998-06-15 모리시타 요이찌 광도파로 및 그 제조방법
US6090635A (en) * 1992-11-17 2000-07-18 Gte Laboratories Incorporated Method for forming a semiconductor device structure having a laser portion
EP0598966B1 (fr) * 1992-11-24 1999-02-10 International Business Machines Corporation Isolateur optique pour guide d'onde
US5311539A (en) * 1992-11-25 1994-05-10 International Business Machines Corporation Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation
ES2111707T3 (es) * 1992-11-26 1998-03-16 Nederland Ptt Procedimiento de fabricacion de bifurcaciones pronunciadas de una guia de ondas en componentes opticos integrados.
US5320981A (en) * 1993-08-10 1994-06-14 Micron Semiconductor, Inc. High accuracy via formation for semiconductor devices
US6204189B1 (en) 1999-01-29 2001-03-20 The Regents Of The University Of California Fabrication of precision high quality facets on molecular beam epitaxy material
US6304587B1 (en) 1999-06-14 2001-10-16 Corning Incorporated Buried ridge semiconductor laser with aluminum-free confinement layer
US6596557B1 (en) * 2000-03-02 2003-07-22 Orchid Lightwave Communications, Inc. Integrated optical devices and methods of making such devices
KR100908623B1 (ko) * 2001-10-30 2009-07-21 호야 코포레이션 유에스에이 광출력의 횡단 전달을 이용하는 광학적 접합 장치 및 방법
JP3666463B2 (ja) * 2002-03-13 2005-06-29 日本電気株式会社 光導波路デバイスおよび光導波路デバイスの製造方法
US6985646B2 (en) 2003-01-24 2006-01-10 Xponent Photonics Inc Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof
US20050083982A1 (en) * 2003-10-20 2005-04-21 Binoptics Corporation Surface emitting and receiving photonic device
US7481545B2 (en) * 2005-10-13 2009-01-27 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Method of forming and mounting an angled reflector
US7496120B2 (en) * 2005-10-14 2009-02-24 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Compact laser output monitoring using reflection and diffraction
WO2007048110A2 (fr) * 2005-10-19 2007-04-26 University Of Notre Dame Du Lac Guide d'onde a contraste d'indice eleve
GB2432456A (en) * 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
US7995892B2 (en) * 2007-06-01 2011-08-09 Lawrence Livermore National Security, Llc Low loss, high and low index contrast waveguides in semiconductors
US7889993B2 (en) * 2007-08-17 2011-02-15 Avago Technologies Fiber Ip (Singapore) Pte. Ltd Optical transceiver module having a front facet reflector and methods for making and using a front facet reflector
US8982921B2 (en) * 2013-02-07 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor lasers and etched-facet integrated devices having H-shaped windows
US9214786B2 (en) 2013-04-09 2015-12-15 Nlight Photonics Corporation Diode laser packages with flared laser oscillator waveguides
US9166369B2 (en) 2013-04-09 2015-10-20 Nlight Photonics Corporation Flared laser oscillator waveguide
US10186836B2 (en) 2014-10-10 2019-01-22 Nlight, Inc. Multiple flared laser oscillator waveguide
WO2016197137A1 (fr) 2015-06-04 2016-12-08 Nlight, Inc. Laser/amplificateur de réseau dbr angulaire avec une ou plusieurs régions à sauts de mode
DE102020130017A1 (de) * 2020-11-13 2022-05-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser
DE102021103484A1 (de) * 2021-02-15 2022-08-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser
JP2023124651A (ja) * 2022-02-25 2023-09-06 ウシオ電機株式会社 半導体レーザ素子およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095826B1 (fr) * 1982-05-28 1988-06-01 Sharp Kabushiki Kaisha Laser à semi-conducteur
JPS58225681A (ja) * 1982-06-23 1983-12-27 Sharp Corp 半導体レ−ザ素子
US4725112A (en) * 1985-08-06 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Buried undercut mesa-like waveguide
US4773720A (en) * 1986-06-03 1988-09-27 General Electric Company Optical waveguide
US4815084A (en) * 1987-05-20 1989-03-21 Spectra Diode Laboratories, Inc. Semiconductor laser with integrated optical elements
US4886538A (en) * 1987-07-28 1989-12-12 Polaroid Corporation Process for tapering waveguides
NL8800939A (nl) * 1988-04-12 1989-11-01 Philips Nv Stralingskoppelinrichting.

Also Published As

Publication number Publication date
EP0402556A1 (fr) 1990-12-19
JPH0330490A (ja) 1991-02-08
EP0402556B1 (fr) 1993-10-06
CA2017303C (fr) 1995-12-12
DE68909779D1 (de) 1993-11-11
JPH07105573B2 (ja) 1995-11-13
US5103493A (en) 1992-04-07
DE68909779T2 (de) 1994-05-05
US5032219A (en) 1991-07-16

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