CA2018341A1 - Amplificateurs de laser a ondes progressives a guide d'ondes evase a surfaces inclinees - Google Patents

Amplificateurs de laser a ondes progressives a guide d'ondes evase a surfaces inclinees

Info

Publication number
CA2018341A1
CA2018341A1 CA2018341A CA2018341A CA2018341A1 CA 2018341 A1 CA2018341 A1 CA 2018341A1 CA 2018341 A CA2018341 A CA 2018341A CA 2018341 A CA2018341 A CA 2018341A CA 2018341 A1 CA2018341 A1 CA 2018341A1
Authority
CA
Canada
Prior art keywords
angled
wave laser
facet
flared
facets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2018341A
Other languages
English (en)
Other versions
CA2018341C (fr
Inventor
Chung-En Zah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iconectiv LLC
Original Assignee
Bell Communications Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Communications Research Inc filed Critical Bell Communications Research Inc
Publication of CA2018341A1 publication Critical patent/CA2018341A1/fr
Application granted granted Critical
Publication of CA2018341C publication Critical patent/CA2018341C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CA002018341A 1989-11-13 1990-06-05 Amplificateurs de laser a ondes progressives a guide d'ondes evase a surfaces inclinees Expired - Fee Related CA2018341C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/435,625 US4965525A (en) 1989-11-13 1989-11-13 Angled-facet flared-waveguide traveling-wave laser amplifiers
US07/435,625 1989-11-13

Publications (2)

Publication Number Publication Date
CA2018341A1 true CA2018341A1 (fr) 1991-05-13
CA2018341C CA2018341C (fr) 1993-06-29

Family

ID=23729149

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002018341A Expired - Fee Related CA2018341C (fr) 1989-11-13 1990-06-05 Amplificateurs de laser a ondes progressives a guide d'ondes evase a surfaces inclinees

Country Status (5)

Country Link
US (1) US4965525A (fr)
EP (1) EP0500529A4 (fr)
JP (1) JPH0648745B2 (fr)
CA (1) CA2018341C (fr)
WO (1) WO1991007787A1 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5119039A (en) * 1990-12-31 1992-06-02 Gte Laboratories Incorporated Semiconductor optical amplifier with wideband electrical response
US5793521A (en) * 1992-09-21 1998-08-11 Sdl Inc. Differentially patterned pumped optical semiconductor gain media
US5539571A (en) * 1992-09-21 1996-07-23 Sdl, Inc. Differentially pumped optical amplifer and mopa device
US5321714A (en) * 1992-12-14 1994-06-14 Xerox Corporation Reflection suppression in semiconductor diode optical switching arrays
GB2285332A (en) * 1993-12-30 1995-07-05 At & T Corp Integrated laser/modulators
FR2753285B1 (fr) * 1996-09-06 1998-10-09 Alsthom Cge Alcatel Amplificateur optique a semi conducteur
US5936991A (en) * 1996-09-17 1999-08-10 The United States Of America As Represented By The Secretary Of The Air Force Near fields in flared MOPAs amplifiers and oscillators by lateral current tailoring
US6091755A (en) * 1997-11-21 2000-07-18 Sdl, Inc. Optically amplifying semiconductor diodes with curved waveguides for external cavities
US6499888B1 (en) 1999-12-20 2002-12-31 Corning Lasertron, Inc. Wide ridge pump laser
US6375364B1 (en) 2000-01-06 2002-04-23 Corning Lasertron, Inc. Back facet flared ridge for pump laser
US6810054B2 (en) * 2000-03-31 2004-10-26 Presstek, Inc. Mode-limiting diode laser structure
US6625370B2 (en) * 2000-08-22 2003-09-23 Nippon Telegraph And Telephone Corporation Optical waveguide and fabricating method thereof, and optical waveguide circuit
JP4660999B2 (ja) * 2001-08-01 2011-03-30 パナソニック株式会社 光導波路デバイス及びコヒーレント光源及び光学装置
US6798815B2 (en) * 2002-04-24 2004-09-28 Bookham Technology Plc High power semiconductor laser diode and method for making such a diode
JP4077348B2 (ja) * 2003-03-17 2008-04-16 松下電器産業株式会社 半導体レーザ装置およびそれを用いた光ピックアップ装置
US7817702B2 (en) * 2003-03-19 2010-10-19 Binoptics Corporation High SMSR unidirectional etched lasers and low back-reflection photonic device
JP2006049650A (ja) * 2004-08-05 2006-02-16 Hamamatsu Photonics Kk 半導体レーザ素子及び半導体レーザ素子アレイ
JP2006093614A (ja) * 2004-09-27 2006-04-06 Hamamatsu Photonics Kk 半導体レーザ素子及び半導体レーザ素子アレイ
JP4860628B2 (ja) 2005-09-30 2012-01-25 アンリツ株式会社 半導体光素子および半導体光素子を搭載した外部共振レーザ
JP2012160518A (ja) * 2011-01-31 2012-08-23 Fujitsu Ltd 偏波無依存型半導体光増幅装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2421337C2 (de) * 1974-05-02 1982-10-28 Siemens AG, 1000 Berlin und 8000 München Modenwandler für optische Wellenleiter
US4783788A (en) * 1985-12-16 1988-11-08 Lytel Incorporated High power semiconductor lasers
GB2188187B (en) * 1986-03-19 1989-11-15 Stc Plc Coupled waveguide injection laser
US4872180A (en) * 1989-06-16 1989-10-03 Gte Laboratories Incorporated Method for reducing facet reflectivities of semiconductor light sources and device thereof

Also Published As

Publication number Publication date
US4965525A (en) 1990-10-23
EP0500529A4 (en) 1993-01-27
WO1991007787A1 (fr) 1991-05-30
EP0500529A1 (fr) 1992-09-02
CA2018341C (fr) 1993-06-29
JPH0648745B2 (ja) 1994-06-22
JPH05501938A (ja) 1993-04-08

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