CA2150679A1 - Structure amelioree d'element thermoelectrique a couche mince cdse - Google Patents

Structure amelioree d'element thermoelectrique a couche mince cdse

Info

Publication number: CA2150679A1
Authority: CA; Canada
Prior art keywords: deposited; layer; semiconductor channel; thin film; gate electrode
Prior art date: 1992-12-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

CA2150679A

Other languages

English (en)

Other versions

CA2150679C (fr

Inventor

James F. Farrell

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

iFire Technology Inc

Original Assignee

Individual

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1992-12-01

Filing date

1992-12-01

Publication date

1994-06-09

1992-12-01 Application filed by Individual filed Critical Individual

1992-12-01 Priority to JP6512599A priority Critical patent/JPH08511130A/ja

1992-12-01 Priority to EP92923643A priority patent/EP0672302A1/fr

1992-12-01 Priority to PCT/CA1992/000520 priority patent/WO1994013019A1/fr

1992-12-01 Priority to CA002150679A priority patent/CA2150679C/fr

1994-06-09 Publication of CA2150679A1 publication Critical patent/CA2150679A1/fr

2000-01-11 Application granted granted Critical

2000-01-11 Publication of CA2150679C publication Critical patent/CA2150679C/fr

2012-12-01 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 title 1
239000004065 semiconductor Substances 0.000 abstract 4
239000012212 insulator Substances 0.000 abstract 3
238000002161 passivation Methods 0.000 abstract 3
239000000758 substrate Substances 0.000 abstract 3
239000010409 thin film Substances 0.000 abstract 3
239000011521 glass Substances 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium

Landscapes

Thin Film Transistor (AREA)
Liquid Crystal (AREA)

CA002150679A 1992-12-01 1992-12-01 Structure amelioree d'element thermoelectrique a couche mince cdse Expired - Fee Related CA2150679C (fr)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP6512599A JPH08511130A (ja)	1992-12-01	1992-12-01	ＣｄＳｅ薄膜トランジスタのための改良された構造
EP92923643A EP0672302A1 (fr)	1992-12-01	1992-12-01	Structure amelioree pour transistor a couches minces au seleniure de cadmium
PCT/CA1992/000520 WO1994013019A1 (fr)	1992-12-01	1992-12-01	Structure amelioree pour transistor a couches minces au seleniure de cadmium
CA002150679A CA2150679C (fr)	1992-12-01	1992-12-01	Structure amelioree d'element thermoelectrique a couche mince cdse

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
PCT/CA1992/000520 WO1994013019A1 (fr)	1992-12-01	1992-12-01	Structure amelioree pour transistor a couches minces au seleniure de cadmium
CA002150679A CA2150679C (fr)	1992-12-01	1992-12-01	Structure amelioree d'element thermoelectrique a couche mince cdse

Publications (2)

Publication Number	Publication Date
CA2150679A1 true CA2150679A1 (fr)	1994-06-09
CA2150679C CA2150679C (fr)	2000-01-11

Family

ID=25677986

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA002150679A Expired - Fee Related CA2150679C (fr)	1992-12-01	1992-12-01	Structure amelioree d'element thermoelectrique a couche mince cdse

Country Status (2)

Country	Link
CA (1)	CA2150679C (fr)
WO (1)	WO1994013019A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6043113A (en) *	1995-07-31	2000-03-28	1294339 Ontario, Inc.	Method of forming self-aligned thin film transistor
CN104020621B (zh)	2014-05-26	2017-03-01	京东方科技集团股份有限公司	一种阵列基板及其制备方法、显示装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5010027A (en) *	1990-03-21	1991-04-23	General Electric Company	Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure

1992
- 1992-12-01 CA CA002150679A patent/CA2150679C/fr not_active Expired - Fee Related
- 1992-12-01 WO PCT/CA1992/000520 patent/WO1994013019A1/fr not_active Ceased

Also Published As

Publication number	Publication date
CA2150679C (fr)	2000-01-11
WO1994013019A1 (fr)	1994-06-09

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Legal Events

Date	Code	Title	Description
1995-05-31	EEER	Examination request
2002-12-02	MKLA	Lapsed