CA2150679C - Structure amelioree d'element thermoelectrique a couche mince cdse - Google Patents
Structure amelioree d'element thermoelectrique a couche mince cdse Download PDFInfo
- Publication number
- CA2150679C CA2150679C CA002150679A CA2150679A CA2150679C CA 2150679 C CA2150679 C CA 2150679C CA 002150679 A CA002150679 A CA 002150679A CA 2150679 A CA2150679 A CA 2150679A CA 2150679 C CA2150679 C CA 2150679C
- Authority
- CA
- Canada
- Prior art keywords
- layer
- source
- depositing
- semiconductor
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 239000012212 insulator Substances 0.000 claims abstract description 12
- 238000002161 passivation Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 238000011109 contamination Methods 0.000 claims description 5
- 238000000992 sputter etching Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 238000001459 lithography Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Transistor à couches minces comportant un substrat en verre; une électrode de grille déposée sur le substrat; une couche d'isolant de grille déposée sur le substrat et par-dessus l'électrode de grille; une couche canal semi-conductrice en couche mince déposée sur la couche d'isolant de grille et sensiblement alignée sur l'électrode de grille; une couche de passivation déposée sur la couche d'isolant de grille et par-dessus la couche canal semi-conductrice en couche mince; une paire de trous traversants formés par gravure dans la couche de passivation et s'étendant jusqu'à la couche canal semi-conductrice; et une paire d'électrodes source et drain déposées sur la couche de passivation et s'étendant dans les trous traversants de manière qu'elles soient au contact de la couche canal semi-conductrice.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP92923643A EP0672302A1 (fr) | 1992-12-01 | 1992-12-01 | Structure amelioree pour transistor a couches minces au seleniure de cadmium |
| CA002150679A CA2150679C (fr) | 1992-12-01 | 1992-12-01 | Structure amelioree d'element thermoelectrique a couche mince cdse |
| PCT/CA1992/000520 WO1994013019A1 (fr) | 1992-12-01 | 1992-12-01 | Structure amelioree pour transistor a couches minces au seleniure de cadmium |
| JP6512599A JPH08511130A (ja) | 1992-12-01 | 1992-12-01 | ＣｄＳｅ薄膜トランジスタのための改良された構造 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002150679A CA2150679C (fr) | 1992-12-01 | 1992-12-01 | Structure amelioree d'element thermoelectrique a couche mince cdse |
| PCT/CA1992/000520 WO1994013019A1 (fr) | 1992-12-01 | 1992-12-01 | Structure amelioree pour transistor a couches minces au seleniure de cadmium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2150679A1 CA2150679A1 (fr) | 1994-06-09 |
| CA2150679C true CA2150679C (fr) | 2000-01-11 |
Family
ID=25677986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002150679A Expired - Fee Related CA2150679C (fr) | 1992-12-01 | 1992-12-01 | Structure amelioree d'element thermoelectrique a couche mince cdse |
Country Status (2)
| Country | Link |
|---|---|
| CA (1) | CA2150679C (fr) |
| WO (1) | WO1994013019A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6043113A (en) * | 1995-07-31 | 2000-03-28 | 1294339 Ontario, Inc. | Method of forming self-aligned thin film transistor |
| CN104020621B (zh) * | 2014-05-26 | 2017-03-01 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5010027A (en) * | 1990-03-21 | 1991-04-23 | General Electric Company | Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure |
-
1992
- 1992-12-01 CA CA002150679A patent/CA2150679C/fr not_active Expired - Fee Related
- 1992-12-01 WO PCT/CA1992/000520 patent/WO1994013019A1/fr not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CA2150679A1 (fr) | 1994-06-09 |
| WO1994013019A1 (fr) | 1994-06-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |