CA2210008C - Diode laser a caracteristique de distorsion d'intermodulation excellente - Google Patents

Diode laser a caracteristique de distorsion d'intermodulation excellente Download PDF

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Publication number
CA2210008C
CA2210008C CA002210008A CA2210008A CA2210008C CA 2210008 C CA2210008 C CA 2210008C CA 002210008 A CA002210008 A CA 002210008A CA 2210008 A CA2210008 A CA 2210008A CA 2210008 C CA2210008 C CA 2210008C
Authority
CA
Canada
Prior art keywords
laser diode
diode element
partial grating
end surfaces
grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002210008A
Other languages
English (en)
Other versions
CA2210008A1 (fr
Inventor
Tetsuro Okuda
Hirohito Yamada
Toshitaka Torikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5001501A external-priority patent/JP2600490B2/ja
Priority claimed from JP5093460A external-priority patent/JP2536390B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Priority claimed from CA002113027A external-priority patent/CA2113027C/fr
Publication of CA2210008A1 publication Critical patent/CA2210008A1/fr
Application granted granted Critical
Publication of CA2210008C publication Critical patent/CA2210008C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Lasers (AREA)
CA002210008A 1993-01-08 1994-01-07 Diode laser a caracteristique de distorsion d'intermodulation excellente Expired - Fee Related CA2210008C (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP1501/1993 1993-01-08
JP5001501A JP2600490B2 (ja) 1993-01-08 1993-01-08 分布帰還型半導体レーザ
JP93460/1993 1993-04-21
JP5093460A JP2536390B2 (ja) 1993-04-21 1993-04-21 半導体レ―ザおよびその製造方法
CA002113027A CA2113027C (fr) 1993-01-08 1994-01-07 Diode laser a caracteristique de distorsion d'intermodulation excellente

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CA002113027A Division CA2113027C (fr) 1993-01-08 1994-01-07 Diode laser a caracteristique de distorsion d'intermodulation excellente

Publications (2)

Publication Number Publication Date
CA2210008A1 CA2210008A1 (fr) 1994-07-09
CA2210008C true CA2210008C (fr) 2001-08-07

Family

ID=27169681

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002210008A Expired - Fee Related CA2210008C (fr) 1993-01-08 1994-01-07 Diode laser a caracteristique de distorsion d'intermodulation excellente

Country Status (1)

Country Link
CA (1) CA2210008C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018184697A1 (fr) * 2017-04-07 2018-10-11 Huawei Technologies Co., Ltd. Laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018184697A1 (fr) * 2017-04-07 2018-10-11 Huawei Technologies Co., Ltd. Laser

Also Published As

Publication number Publication date
CA2210008A1 (fr) 1994-07-09

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