CA2249157C - Implantation d'ions monoenergetiques de distribution uniforme - Google Patents

Implantation d'ions monoenergetiques de distribution uniforme Download PDF

Info

Publication number: CA2249157C
Authority: CA; Canada
Prior art keywords: region; ions; plasma; control grid; distribution control
Prior art date: 1998-10-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CA 2249157

Other languages

English (en)

Other versions

CA2249157A1 (fr

Inventor

Andranik Sarkissian

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Individual

Original Assignee

Individual

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-10-01

Filing date

1998-10-01

Publication date

2004-12-14

1998-10-01 Application filed by Individual filed Critical Individual

1998-10-01 Priority to CA 2249157 priority Critical patent/CA2249157C/fr

2000-04-01 Publication of CA2249157A1 publication Critical patent/CA2249157A1/fr

2004-12-14 Application granted granted Critical

2004-12-14 Publication of CA2249157C publication Critical patent/CA2249157C/fr

2018-10-01 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

238000005468 ion implantation Methods 0.000 title description 8
238000009827 uniform distribution Methods 0.000 title description 3
150000002500 ions Chemical class 0.000 claims abstract description 82
238000009826 distribution Methods 0.000 claims abstract description 27
230000001133 acceleration Effects 0.000 claims abstract description 8
238000000034 method Methods 0.000 claims description 20
238000004519 manufacturing process Methods 0.000 claims description 10
230000005855 radiation Effects 0.000 claims description 10
239000000463 material Substances 0.000 claims description 6
238000002513 implantation Methods 0.000 description 14
238000010884 ion-beam technique Methods 0.000 description 6
239000002245 particle Substances 0.000 description 6
239000007789 gas Substances 0.000 description 5
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
230000007935 neutral effect Effects 0.000 description 4
238000000605 extraction Methods 0.000 description 3
230000003993 interaction Effects 0.000 description 3
238000004377 microelectronic Methods 0.000 description 3
230000035515 penetration Effects 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
230000008901 benefit Effects 0.000 description 2
239000004020 conductor Substances 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
230000008878 coupling Effects 0.000 description 2
238000010168 coupling process Methods 0.000 description 2
238000005859 coupling reaction Methods 0.000 description 2
238000000151 deposition Methods 0.000 description 2
230000004907 flux Effects 0.000 description 2
239000007943 implant Substances 0.000 description 2
229910052742 iron Inorganic materials 0.000 description 2
230000005012 migration Effects 0.000 description 2
238000013508 migration Methods 0.000 description 2
239000000203 mixture Substances 0.000 description 2
239000010453 quartz Substances 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
239000007787 solid Substances 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
229910001220 stainless steel Inorganic materials 0.000 description 2
239000010935 stainless steel Substances 0.000 description 2
238000002399 angioplasty Methods 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
230000008859 change Effects 0.000 description 1
238000001816 cooling Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
230000005684 electric field Effects 0.000 description 1
238000010893 electron trap Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
238000010849 ion bombardment Methods 0.000 description 1
239000007788 liquid Substances 0.000 description 1
239000000696 magnetic material Substances 0.000 description 1
230000005415 magnetization Effects 0.000 description 1
238000001755 magnetron sputter deposition Methods 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
239000013528 metallic particle Substances 0.000 description 1
230000005405 multipole Effects 0.000 description 1
229910001172 neodymium magnet Inorganic materials 0.000 description 1
229910052756 noble gas Inorganic materials 0.000 description 1
229910052761 rare earth metal Inorganic materials 0.000 description 1
150000002910 rare earth metals Chemical class 0.000 description 1
230000003252 repetitive effect Effects 0.000 description 1
238000007789 sealing Methods 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
239000000243 solution Substances 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
238000004804 winding Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Physical Vapour Deposition (AREA)
Electron Sources, Ion Sources (AREA)

CA 2249157 1998-10-01 1998-10-01 Implantation d'ions monoenergetiques de distribution uniforme Expired - Fee Related CA2249157C (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA 2249157 CA2249157C (fr)	1998-10-01	1998-10-01	Implantation d'ions monoenergetiques de distribution uniforme

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CA 2249157 CA2249157C (fr)	1998-10-01	1998-10-01	Implantation d'ions monoenergetiques de distribution uniforme

Publications (2)

Publication Number	Publication Date
CA2249157A1 CA2249157A1 (fr)	2000-04-01
CA2249157C true CA2249157C (fr)	2004-12-14

Family

ID=29410005

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA 2249157 Expired - Fee Related CA2249157C (fr)	1998-10-01	1998-10-01	Implantation d'ions monoenergetiques de distribution uniforme

Country Status (1)

Country	Link
CA (1)	CA2249157C (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2005042064A1 (fr) *	2003-10-31	2005-05-12	Ventracor Limited	Pompe a sang amelioree comprenant des composants polymeres
US20120021136A1 (en) *	2010-07-20	2012-01-26	Varian Semiconductor Equipment Associates, Inc.	System and method for controlling plasma deposition uniformity
DE102011052029A1 (de) *	2011-07-21	2013-01-24	Otto Hauser	Plasmaimmersions-Ionenimplantation in nicht leitfähiges Substrat
CN107706078B (zh) *	2017-09-22	2019-08-06	深圳市中科摩方科技有限公司	一种全方位等离子体浸没离子注入装置

1998
- 1998-10-01 CA CA 2249157 patent/CA2249157C/fr not_active Expired - Fee Related

Also Published As

Publication number	Publication date
CA2249157A1 (fr)	2000-04-01

Legal Events

Date	Code	Title	Description
1999-07-14	EEER	Examination request
2007-10-01	MKLA	Lapsed

Publication	Publication Date	Title
JP4722486B2 (ja)	2011-07-13	高蒸着速度スパッタリング
KR100407606B1 (ko)	2004-03-20	펄스로된애노드를갖는플라즈마담금주입
US8357912B2 (en)	2013-01-22	Techniques for providing a multimode ion source
JP4178330B2 (ja)	2008-11-12	プラズマ注入システム
US4684848A (en)	1987-08-04	Broad-beam electron source
JP5212760B2 (ja)	2013-06-19	イオン注入装置用のイオン源およびそのためのリペラ
US7147759B2 (en)	2006-12-12	High-power pulsed magnetron sputtering
EP1556882B1 (fr)	2011-03-30	Traitement par plasma pulsé de forte puissance assisté par champ magnétique
US6803585B2 (en)	2004-10-12	Electron-cyclotron resonance type ion beam source for ion implanter
KR100388594B1 (ko)	2003-09-19	이온빔처리장치
US6501081B1 (en)	2002-12-31	Electron flood apparatus for neutralizing charge build up on a substrate during ion implantation
CA2249157C (fr)	2004-12-14	Implantation d'ions monoenergetiques de distribution uniforme
JPH01302645A (ja)	1989-12-06	放電装置
RU2810726C1 (ru)	2023-12-28	Сильноточный непрерывный источник ионных пучков на основе плазмы электронно-циклотронного резонансного разряда, удерживаемой в открытой магнитной ловушке
JPH06116724A (ja)	1994-04-26	薄膜形成装置
JPH08241687A (ja)	1996-09-17	Ｅｃｒ型イオン源
EP0095879B1 (fr)	1987-08-19	Equipement et méthode pour le traitement des surfaces avec un faisceau d'ions à basse énergie et haute intensité
Sakudo et al.	2004	Microwave ion sources
Abdelaziz et al.	1999	Development of radio frequency ion sources and their applications
MARTEV et al.	1998	BROAD-BEAM LOW-ENERGY ION SOURCE FOR RESEARCH AND TECHNOLOGY APPLICATIONS
KR19980032745A (ko)	1998-07-25	펄스 플레이트 플라즈마 이온주입 시스템
JPH06151326A (ja)	1994-05-31	プラズマ処理装置