CA2249157C - Implantation d'ions monoenergetiques de distribution uniforme - Google Patents

Implantation d'ions monoenergetiques de distribution uniforme Download PDF

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Publication number
CA2249157C
CA2249157C CA 2249157 CA2249157A CA2249157C CA 2249157 C CA2249157 C CA 2249157C CA 2249157 CA2249157 CA 2249157 CA 2249157 A CA2249157 A CA 2249157A CA 2249157 C CA2249157 C CA 2249157C
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CA
Canada
Prior art keywords
region
ions
plasma
control grid
distribution control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA 2249157
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English (en)
Other versions
CA2249157A1 (fr
Inventor
Andranik Sarkissian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
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Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CA 2249157 priority Critical patent/CA2249157C/fr
Publication of CA2249157A1 publication Critical patent/CA2249157A1/fr
Application granted granted Critical
Publication of CA2249157C publication Critical patent/CA2249157C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
CA 2249157 1998-10-01 1998-10-01 Implantation d'ions monoenergetiques de distribution uniforme Expired - Fee Related CA2249157C (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA 2249157 CA2249157C (fr) 1998-10-01 1998-10-01 Implantation d'ions monoenergetiques de distribution uniforme

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA 2249157 CA2249157C (fr) 1998-10-01 1998-10-01 Implantation d'ions monoenergetiques de distribution uniforme

Publications (2)

Publication Number Publication Date
CA2249157A1 CA2249157A1 (fr) 2000-04-01
CA2249157C true CA2249157C (fr) 2004-12-14

Family

ID=29410005

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2249157 Expired - Fee Related CA2249157C (fr) 1998-10-01 1998-10-01 Implantation d'ions monoenergetiques de distribution uniforme

Country Status (1)

Country Link
CA (1) CA2249157C (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005043580A1 (fr) * 2003-10-31 2005-05-12 Ventracor Limited Implantation d'ions par immersion dans un plasma utilisant un treillis conducteur
US20120021136A1 (en) * 2010-07-20 2012-01-26 Varian Semiconductor Equipment Associates, Inc. System and method for controlling plasma deposition uniformity
DE102011052029A1 (de) * 2011-07-21 2013-01-24 Otto Hauser Plasmaimmersions-Ionenimplantation in nicht leitfähiges Substrat
CN107706078B (zh) * 2017-09-22 2019-08-06 深圳市中科摩方科技有限公司 一种全方位等离子体浸没离子注入装置

Also Published As

Publication number Publication date
CA2249157A1 (fr) 2000-04-01

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