CA2249157A1 - Implantation d'ions monoenergetiques de distribution uniforme - Google Patents

Implantation d'ions monoenergetiques de distribution uniforme Download PDF

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Publication number
CA2249157A1
CA2249157A1 CA 2249157 CA2249157A CA2249157A1 CA 2249157 A1 CA2249157 A1 CA 2249157A1 CA 2249157 CA2249157 CA 2249157 CA 2249157 A CA2249157 A CA 2249157A CA 2249157 A1 CA2249157 A1 CA 2249157A1
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CA
Canada
Prior art keywords
region
ions
vacuum chamber
distribution control
control grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA 2249157
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English (en)
Other versions
CA2249157C (fr
Inventor
Andranik Sarkissian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Institut National de la Recherche Scientifique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut National de la Recherche Scientifique filed Critical Institut National de la Recherche Scientifique
Priority to CA 2249157 priority Critical patent/CA2249157C/fr
Publication of CA2249157A1 publication Critical patent/CA2249157A1/fr
Application granted granted Critical
Publication of CA2249157C publication Critical patent/CA2249157C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
CA 2249157 1998-10-01 1998-10-01 Implantation d'ions monoenergetiques de distribution uniforme Expired - Fee Related CA2249157C (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA 2249157 CA2249157C (fr) 1998-10-01 1998-10-01 Implantation d'ions monoenergetiques de distribution uniforme

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA 2249157 CA2249157C (fr) 1998-10-01 1998-10-01 Implantation d'ions monoenergetiques de distribution uniforme

Publications (2)

Publication Number Publication Date
CA2249157A1 true CA2249157A1 (fr) 2000-04-01
CA2249157C CA2249157C (fr) 2004-12-14

Family

ID=29410005

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2249157 Expired - Fee Related CA2249157C (fr) 1998-10-01 1998-10-01 Implantation d'ions monoenergetiques de distribution uniforme

Country Status (1)

Country Link
CA (1) CA2249157C (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005043580A1 (fr) * 2003-10-31 2005-05-12 Ventracor Limited Implantation d'ions par immersion dans un plasma utilisant un treillis conducteur
WO2012012523A1 (fr) * 2010-07-20 2012-01-26 Varian Semiconductor Equipment Associates, Inc. Système et procédé permettant de contrôler l'uniformité de dépôt plasma
WO2013011147A3 (fr) * 2011-07-21 2013-03-14 Otto Hauser Implantation ionique par immersion plasma dans un substrat non conducteur
CN107706078A (zh) * 2017-09-22 2018-02-16 深圳市创新维度科技有限公司 一种全方位等离子体浸没离子注入装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005043580A1 (fr) * 2003-10-31 2005-05-12 Ventracor Limited Implantation d'ions par immersion dans un plasma utilisant un treillis conducteur
WO2012012523A1 (fr) * 2010-07-20 2012-01-26 Varian Semiconductor Equipment Associates, Inc. Système et procédé permettant de contrôler l'uniformité de dépôt plasma
WO2013011147A3 (fr) * 2011-07-21 2013-03-14 Otto Hauser Implantation ionique par immersion plasma dans un substrat non conducteur
CN107706078A (zh) * 2017-09-22 2018-02-16 深圳市创新维度科技有限公司 一种全方位等离子体浸没离子注入装置

Also Published As

Publication number Publication date
CA2249157C (fr) 2004-12-14

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