CA2260574A1 - Contact ohmique et processus de fabrication de ce genre de contact - Google Patents
Contact ohmique et processus de fabrication de ce genre de contact Download PDFInfo
- Publication number
- CA2260574A1 CA2260574A1 CA002260574A CA2260574A CA2260574A1 CA 2260574 A1 CA2260574 A1 CA 2260574A1 CA 002260574 A CA002260574 A CA 002260574A CA 2260574 A CA2260574 A CA 2260574A CA 2260574 A1 CA2260574 A1 CA 2260574A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- ohmic contact
- substrate
- thickness
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10018843A JPH11220119A (ja) | 1998-01-30 | 1998-01-30 | オーミック電極およびその製造方法 |
| JPJP-10018843 | 1998-01-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2260574A1 true CA2260574A1 (fr) | 1999-07-30 |
Family
ID=11982851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002260574A Abandoned CA2260574A1 (fr) | 1998-01-30 | 1999-01-29 | Contact ohmique et processus de fabrication de ce genre de contact |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH11220119A (fr) |
| CA (1) | CA2260574A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119230393A (zh) * | 2024-11-29 | 2024-12-31 | 中国科学院半导体研究所 | 一种P型InP欧姆接触电极的制备方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3654037B2 (ja) | 1999-03-25 | 2005-06-02 | 住友電気工業株式会社 | オーミック電極とその製造方法、および半導体装置 |
| JP7653078B2 (ja) * | 2021-07-06 | 2025-03-28 | ウシオ電機株式会社 | 赤外led素子 |
-
1998
- 1998-01-30 JP JP10018843A patent/JPH11220119A/ja active Pending
-
1999
- 1999-01-29 CA CA002260574A patent/CA2260574A1/fr not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119230393A (zh) * | 2024-11-29 | 2024-12-31 | 中国科学院半导体研究所 | 一种P型InP欧姆接触电极的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11220119A (ja) | 1999-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ogawa | Alloying behavior of Ni/Au‐Ge films on GaAs | |
| US6268618B1 (en) | Electrode for light-emitting semiconductor devices and method of producing the electrode | |
| US6291840B1 (en) | GaN related compound semiconductor light-emitting device | |
| US6867058B2 (en) | Transparent electrode film and group III nitride semiconductor device | |
| US5317190A (en) | Oxygen assisted ohmic contact formation to N-type gallium arsenide | |
| US5436505A (en) | Heat-resisting ohmic contact on semiconductor diamond layer | |
| US5330592A (en) | Process of deposition and solid state reaction for making alloyed highly conductive copper germanide | |
| JP2907452B2 (ja) | 化合物半導体用電極 | |
| JP3654037B2 (ja) | オーミック電極とその製造方法、および半導体装置 | |
| US20040232429A1 (en) | Electrode for light-emitting semiconductor devices and method of producing the electrode | |
| CA2260574A1 (fr) | Contact ohmique et processus de fabrication de ce genre de contact | |
| US5057454A (en) | Process for producing ohmic electrode for p-type cubic system boron nitride | |
| US5777389A (en) | Semiconductor device including ohmic contact to-n-type GaAs | |
| US5387549A (en) | Process for fabricating ohmic contact | |
| JP2746241B2 (ja) | アロイ・オーミック・コンタクト電極及びその形成方法 | |
| Brown et al. | Ohmic contacts to Si-implanted and un-implanted n-type GaN | |
| JPH0794709A (ja) | オーミック電極 | |
| JPH09191100A (ja) | オーム性電極を有する半導体装置およびオーム性電極の形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued | ||
| FZDE | Discontinued |
Effective date: 20040129 |