CA2321118A1 - Procede permettant de produire des couches semi-conductrices de nitrure de gallium par croissance de recouvrement laterale a travers des masques, et structures semi-conductrices de nitrure de gallium ainsi produites - Google Patents

Procede permettant de produire des couches semi-conductrices de nitrure de gallium par croissance de recouvrement laterale a travers des masques, et structures semi-conductrices de nitrure de gallium ainsi produites Download PDF

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Publication number
CA2321118A1
CA2321118A1 CA002321118A CA2321118A CA2321118A1 CA 2321118 A1 CA2321118 A1 CA 2321118A1 CA 002321118 A CA002321118 A CA 002321118A CA 2321118 A CA2321118 A CA 2321118A CA 2321118 A1 CA2321118 A1 CA 2321118A1
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Prior art keywords
gallium nitride
nitride semiconductor
masks
openings
array
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Granted
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CA002321118A
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CA2321118C (fr
Inventor
Robert F. Davis
Ok-Hyun Nam
Tsvetanka Zheleva
Michael D. Bremser
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North Carolina State University
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Priority claimed from US09/031,843 external-priority patent/US6608327B1/en
Priority claimed from US09/032,190 external-priority patent/US6051849A/en
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Publication of CA2321118A1 publication Critical patent/CA2321118A1/fr
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Publication of CA2321118C publication Critical patent/CA2321118C/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

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  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne un procédé permettant de produire une couche semi-conductrice de nitrure de gallium. Ce procédé consiste à masquer une couche (104) de nitrure de gallium sous-jacente avec un premier masque (106) comprenant une première série d'ouvertures et à faire croître la couche (104) de nitrure de gallium à travers cette première série d'ouvertures et sur le premier masque, et à former ainsi la couche (108 a,b) de nitrure de gallium de recouvrement. On masque ensuite cette couche de recouvrement avec un second masque (206) comprenant une seconde série d'ouvertures. La seconde série d'ouvertures est décalée latéralement par rapport à la première série d'ouvertures. On fait ensuite croître la première couche (108 a,b) de nitrure de gallium de recouvrement à travers la seconde série d'ouvertures et sur le second masque (206) de manière à former une seconde couche (208 a,b) de recouvrement semi-conductrice de nitrure de gallium. Des dispositifs (210) micro-électronique peuvent être formés dans cette seconde couche
CA002321118A 1998-02-27 1999-02-26 Procede permettant de produire des couches semi-conductrices de nitrure de gallium par croissance de recouvrement laterale a travers des masques, et structures semi-conductrices de nitrure de gallium ainsi produites Expired - Lifetime CA2321118C (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/031,843 1998-02-27
US09/031,843 US6608327B1 (en) 1998-02-27 1998-02-27 Gallium nitride semiconductor structure including laterally offset patterned layers
US09/032,190 US6051849A (en) 1998-02-27 1998-02-27 Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US09/032,190 1998-02-27
PCT/US1999/004346 WO1999044224A1 (fr) 1998-02-27 1999-02-26 Procede permettant de produire des couches semi-conductrices de nitrure de gallium par croissance de recouvrement laterale a travers des masques, et structures semi-conductrices de nitrure de gallium ainsi produites

Publications (2)

Publication Number Publication Date
CA2321118A1 true CA2321118A1 (fr) 1999-09-02
CA2321118C CA2321118C (fr) 2008-06-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CA002321118A Expired - Lifetime CA2321118C (fr) 1998-02-27 1999-02-26 Procede permettant de produire des couches semi-conductrices de nitrure de gallium par croissance de recouvrement laterale a travers des masques, et structures semi-conductrices de nitrure de gallium ainsi produites

Country Status (7)

Country Link
EP (1) EP1070340A1 (fr)
JP (1) JP2002505519A (fr)
KR (1) KR100610396B1 (fr)
CN (1) CN1143363C (fr)
AU (1) AU2795699A (fr)
CA (1) CA2321118C (fr)
WO (1) WO1999044224A1 (fr)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0942459B1 (fr) 1997-04-11 2012-03-21 Nichia Corporation Procede assurant la croissance de semi-conducteurs de nitrure
US6265289B1 (en) 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
JP3349506B2 (ja) 1998-07-29 2002-11-25 三洋電機株式会社 窒化物系半導体層の形成方法
JP4529215B2 (ja) * 1999-10-29 2010-08-25 日亜化学工業株式会社 窒化物半導体の成長方法
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
KR100865600B1 (ko) * 2000-02-09 2008-10-27 노쓰 캐롤라이나 스테이트 유니버시티 갈륨 나이트라이드 반도체 구조물 및 그 제조 방법, 및 반도체 구조물 및 그 제조 방법
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP4291527B2 (ja) 2000-10-13 2009-07-08 日本碍子株式会社 Ｉｉｉ族窒化物エピタキシャル基板の使用方法
JP4920152B2 (ja) * 2001-10-12 2012-04-18 住友電気工業株式会社 構造基板の製造方法および半導体素子の製造方法
US20030198837A1 (en) * 2002-04-15 2003-10-23 Craven Michael D. Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
US6876009B2 (en) * 2002-12-09 2005-04-05 Nichia Corporation Nitride semiconductor device and a process of manufacturing the same
US7012314B2 (en) * 2002-12-18 2006-03-14 Agere Systems Inc. Semiconductor devices with reduced active region defects and unique contacting schemes
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
KR100960764B1 (ko) * 2003-01-28 2010-06-01 엘지전자 주식회사 레이저 발광 다이오드 및 그 제조 방법
FR2855650B1 (fr) 2003-05-30 2006-03-03 Soitec Silicon On Insulator Substrats pour systemes contraints et procede de croissance cristalline sur un tel substrat
US7622318B2 (en) 2004-03-30 2009-11-24 Sony Corporation Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
KR100735488B1 (ko) * 2006-02-03 2007-07-04 삼성전기주식회사 질화갈륨계 발광다이오드 소자의 제조방법
KR100773555B1 (ko) * 2006-07-21 2007-11-06 삼성전자주식회사 저결함 반도체 기판 및 그 제조방법
US7825432B2 (en) 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
JP4638958B1 (ja) * 2009-08-20 2011-02-23 株式会社パウデック 半導体素子の製造方法
CN102427101B (zh) * 2011-11-30 2014-05-07 李园 半导体结构及其形成方法
EP2837021A4 (fr) * 2012-04-13 2016-03-23 Tandem Sun Ab Fabrication d'un dispositif à semi-conducteur
JP6799007B2 (ja) * 2015-05-21 2020-12-09 エーファウ・グループ・エー・タルナー・ゲーエムベーハー シード層上に成長層を施す方法
CN106469648B (zh) * 2015-08-31 2019-12-13 中国科学院微电子研究所 一种外延结构及方法
WO2021237528A1 (fr) * 2020-05-27 2021-12-02 苏州晶湛半导体有限公司 Structure de nitrure du groupe iii et son procédé de préparation
WO2021261494A1 (fr) * 2020-06-22 2021-12-30 京セラ株式会社 Procédé de fabrication de dispositif semi-conducteur, dispositif semi-conducteur, dispositif électronique, procédé de fabrication de substrat épitaxial semi-conducteur et substrat épitaxial semi-conducteur

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
JPH04127521A (ja) * 1990-09-19 1992-04-28 Fujitsu Ltd 半導体基板の製造方法
JPH04303920A (ja) * 1991-03-29 1992-10-27 Nec Corp Ｉｖ族基板上の絶縁膜／ｉｉｉ　−ｖ族化合物半導体積層構造
AU6946196A (en) * 1995-09-18 1997-04-09 Hitachi Limited Semiconductor material, method of producing the semiconductor material, and semiconductor device
JP3757339B2 (ja) * 1995-12-26 2006-03-22 富士通株式会社 化合物半導体装置の製造方法
JPH09219540A (ja) * 1996-02-07 1997-08-19 Rikagaku Kenkyusho ＧａＮ薄膜の形成方法
JP3139445B2 (ja) * 1997-03-13 2001-02-26 日本電気株式会社 ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜
JPH10326912A (ja) * 1997-03-25 1998-12-08 Mitsubishi Cable Ind Ltd 無転位ＧａＮ基板の製造方法及びＧａＮ基材
EP0874405A3 (fr) * 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. Element à base de GaN avec une faible densité de dislocations, son utilisation et procédés de fabrication
EP0942459B1 (fr) * 1997-04-11 2012-03-21 Nichia Corporation Procede assurant la croissance de semi-conducteurs de nitrure
JPH11191657A (ja) * 1997-04-11 1999-07-13 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
JPH10321529A (ja) * 1997-05-22 1998-12-04 Nippon Telegr & Teleph Corp <Ntt> ２層選択成長法
JPH11135770A (ja) * 1997-09-01 1999-05-21 Sumitomo Chem Co Ltd ３−５族化合物半導体とその製造方法および半導体素子
JP3925753B2 (ja) * 1997-10-24 2007-06-06 ソニー株式会社 半導体素子およびその製造方法ならびに半導体発光素子

Also Published As

Publication number Publication date
KR100610396B1 (ko) 2006-08-09
CN1292149A (zh) 2001-04-18
CA2321118C (fr) 2008-06-03
JP2002505519A (ja) 2002-02-19
CN1143363C (zh) 2004-03-24
KR20010041192A (ko) 2001-05-15
WO1999044224A1 (fr) 1999-09-02
AU2795699A (en) 1999-09-15
EP1070340A1 (fr) 2001-01-24

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